摘要:
Memory devices comprise a microelectronic substrate including a cell array region and a peripheral region adjacent the cell array region, the cell array region including therein an array of memory cells and the peripheral region including therein peripheral circuits for the array of memory cells, the microelectronic substrate including a lower layer that extends across the cell array region and across the peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, the insulating layer extending across the cell array region and the peripheral region and also including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Finally, an array of memory cell capacitor storage nodes is provided in the cell array region that extend beyond the flat stopper layer and that penetrate through the flat stopper layer and the insulating layer. Related methods are also provided.
摘要:
Memory devices comprise a microelectronic substrate including a cell array region and a peripheral region adjacent the cell array region, the cell array region including therein an array of memory cells and the peripheral region including therein peripheral circuits for the array of memory cells, the microelectronic substrate including a lower layer that extends across the cell array region and across the peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, the insulating layer extending across the cell array region and the peripheral region and also including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Finally, an array of memory cell capacitor storage nodes is provided in the cell array region that extend beyond the flat stopper layer and that penetrate through the flat stopper layer and the insulating layer. Related methods are also provided.
摘要:
High density semiconductor memory devices are provided. The device may include a cell array region including a lower structure, an upper structure, and a selection structure, the selection structure being interposed between the lower and upper structures and including word lines, and a decoding circuit controlling voltages applied to the word lines. The decoding circuit may be configured to apply a first voltage to a pair of the word lines adjacent to each other and to apply a second voltage different from the first voltage to the remaining ones of the word lines, in response to word line address information input thereto.
摘要:
There is provided systems and method for account notifications for required information to complete a financial transaction. A user may establish a user account with a payment provider, where the user account allows the user to receive and transfer funds with other users. The payment provider may require additional information from the user to validate and maintain the user account or to complete monetary transfers. Thus, the payment provider may prepare notifications for the user and transmit the notifications to a user device of the user. The user may provide user input through the user device to complete the notification, where in some cases the user input corresponds to an image from the user. The payment provider may transmit an edit tool to redact information from the image if necessary. The user may request a hold on funds in the user account, or may authorize transactions.
摘要:
There is provided systems and method for generating sale transaction from voice data input by a user. A user device may receive voice data including a preference for purchasing an item. The user device may convert the voice data to the preferences and perform a search for a sales transaction corresponding to the preferences. The search may include parameters about the user, such as a location. The sales transaction may include purchase prices, times, locations, or other relevant data. A user may accept or decline the sales transaction with additional user data. If the user accepts the sales transaction, the sales transaction may be completed with a payment provider and a transaction history given to the user for later redemption of the item. If the user declines the sales transaction, further sale transactions with additional items may be present to the user.
摘要:
A system and/or method may be provided to implement instant payments on mobile devices. In particular, the system may allow a user to designate websites or mobile apps at which the user may make instant payments without user authentication. As such, when the user makes payments at the designated website or mobile app, the system may process payments without requesting the user's user ID and/or password. For example, instant payments may be made by two operations from the user, e.g., two clicks. In particular, the user may click a button to request payment and click another button to confirm payment. Thus, the user may make payments quickly without additional efforts.
摘要:
Disclosed are a drain device and a refrigerator having the same, wherein a drain pipe is formed to have a single passage, an extension portion is disposed in the middle of the passage, and a drain valve opened and closed by defrosted water or am air pressure difference is provided in the extension portion, resulting in simplification of a structure of the drain device, reduction of a fabricating cost, and facilitation of an installation even in a small space.