公开(公告)号：US06291257B1

公开(公告)日：2001-09-18

申请号：US09342607

申请日：1999-06-29

Applicant: Michio Kadota

Inventor： Michio Kadota

IPC: H01L2100

CPC classification number: H01L33/32 ,  H01S5/021 ,  H01S5/32341

Abstract: A semiconductor photonic device contains a substrate: a ZnO buffer layer; and a compound semiconductor layer represented by InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1), wherein the ZnO buffer has a thickness of about 3,500 Å or more and is aligned in a c-axis direction.

Abstract translation: 半导体光子器件包含衬底：ZnO缓冲层; 和由InxGayAlzN（其中x + y + z = 1,0 <= x <= 1,0 <= y <= 1和0 <= z <= 1）表示的化合物半导体层，其中ZnO缓冲液具有 约3,500或更大的厚度并且在c轴方向上对准。

公开(公告)号：US06282357B1

公开(公告)日：2001-08-28

申请号：US09386853

申请日：1999-08-31

Applicant: Michio Kadota ,  Tsuyoshi Iwamoto

Inventor： Michio Kadota ,  Tsuyoshi Iwamoto

IPC: G02B610

CPC classification number: G02F1/335

Abstract: An acousto-optic deflector which has a thin film waveguide layer on a buffer layer formed on a substrate and an IDT and light incidence/emergence means on the thin film waveguide layer. As the thin film waveguide layer, a piezoelectric material such as a ZnO film is used. As the substrate, a material with a resistivity of not more than 20 &OHgr;cm is used. Sezawa waves are excited on the thin film waveguide layer by the IDT, and a laser beam traveling in the thin film waveguide layer is deflected by the Sezawa waves. If the ZnO thin film waveguide layer has a thickness of h and if the excited Sezawa waves have a wavelength of &lgr;, 0.2

Abstract translation: 声光偏转器，其在衬底上形成缓冲层上的薄膜波导层，在薄膜波导层上具有IDT和光入射/出射装置。 作为薄膜波导层，使用ZnO膜等压电材料。 作为基板，使用电阻率不超过20欧姆·厘米的材料。 Sezawa波被IDT在薄膜波导层上激发，并且在薄膜波导层中行进的激光束被Sezawa波偏转。 如果ZnO薄膜波导层具有h的厚度，并且如果激发的Sezawa波具有lamb的波长，则满足0.2

公开(公告)号：US6163099A

公开(公告)日：2000-12-19

申请号：US130926

申请日：1998-08-06

Applicant: Michio Kadota ,  Makoto Kumatoriya

Inventor： Michio Kadota ,  Makoto Kumatoriya

IPC: H03H9/25 ,  H03H9/02 ,  H03H9/15

CPC classification number: H03H9/02574 ,  H03H9/0259

Abstract: A surface acoustic wave device includes a piezoelectric substrate made of a Langasite single crystal and at least one interdigital transducer including a pair of comb-shaped electrodes which are interdigitated with each other and are in contact with the piezoelectric substrate. The piezoelectric substrate has a Euler angle of approximately (0.degree., 130.degree. to 170.degree., 23.degree. to 30.degree.), whereby the surface acoustic wave device has an excellent TCD and also has a large K.sup.2 value.

Abstract translation: 表面声波装置包括由朗氏硅单晶制成的压电基片和至少一个叉指式换能器，其包括彼此交叉指向并与压电基片接触的一对梳状电极。 压电基板具有大约（0°，130°至170°，23°至30°）的欧拉角，由此表面声波装置具有优异的TCD并且还具有大的K2值。

公开(公告)号：US5965969A

公开(公告)日：1999-10-12

申请号：US755094

申请日：1996-11-22

Applicant: Michio Kadota

Inventor： Michio Kadota

IPC: H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  H03H9/15

CPC classification number: H03H9/02574 ,  H03H9/25

Abstract: A surface acoustic wave device includes a quartz substrate and generates surface acoustic waves having a high sonic speed. A surface acoustic wave device includes a surface wave substrate comprising a quartz substrate on which an ZnO thin film functioning as a piezoelectric thin film is disposed. IDTs comprising respective pairs of comb electrodes are disposed in contact with the ZnO thin film. A thickness and arrangement of the piezoelectric thin film relative to the quartz substrate and comb electrodes is such that a novel higher order mode of leakage elastic surface acoustic waves are generated and effectively used enable operation at higher sonic velocity and higher frequency.

Abstract translation: 表面声波装置包括石英基板并产生具有高声速的表面声波。 表面声波装置包括表面波基板，其包括石英基板，在该石英基板上设置有用作压电薄膜的ZnO薄膜。 包括各对梳状电极的IDT与ZnO薄膜接触地设置。 压电薄膜相对于石英基板和梳电极的厚度和布置使得产生新的高阶模态的弹性弹性表面声波，并且有效地使用能够在更高的声速和更高的频率下进行操作。

公开(公告)号：US5894185A

公开(公告)日：1999-04-13

申请号：US714822

申请日：1996-09-17

Applicant: Takaaki Asada ,  Hideya Horiuchi ,  Akiteru Takatsuka ,  Michio Kadota

Inventor： Takaaki Asada ,  Hideya Horiuchi ,  Akiteru Takatsuka ,  Michio Kadota

IPC: H01L41/107 ,  H01L41/04

CPC classification number: H01L41/107

Abstract: A piezoelectric transformer includes a piezoelectric plate in which a pair of cuts are formed in the piezoelectric plate at a position corresponding to a nodal point of the piezoelectric plate. The pair of cuts form a cut-out projection. Connection electrodes electrically connected to input electrodes are respectively formed on input-side cut-out projections. In this piezoelectric transformer, the desired support and electrical connection are made through the cut-out projections.

Abstract translation: 一种压电变压器包括压电板，其中在与压电板的节点对应的位置处在压电板中形成一对切口。 一对切口形成一个切口投影。 电连接到输入电极的连接电极分别形成在输入侧切口突起上。 在这种压电变压器中，通过切口突起形成所需的支撑和电连接。

公开(公告)号：US5838217A

公开(公告)日：1998-11-17

申请号：US704942

申请日：1996-08-30

Applicant: Michio Kadota ,  Kazuhiko Morozumi

Inventor： Michio Kadota ,  Kazuhiko Morozumi

IPC: H03H9/25 ,  H03H9/02 ,  H03H9/64

CPC classification number: H03H9/02669 ,  H03H9/02622 ,  H03H9/02866

Abstract: A double-mode SAW filter of a longitudinally coupling type utilizing an SH-type surface wave, which is structured with first and second IDTs formed on said piezoelectric substrate to cause reflection of an SH-type surface wave between opposite two end faces, thereby creating a standing wave.

Abstract translation: 一种利用SH型表面波的纵向耦合型的双模式SAW滤波器，其由在所述压电基片上形成的第一和第二IDT构成，以在相对的两个端面之间引起SH型表面波的反射，由此产生 站立波

公开(公告)号：US5793147A

公开(公告)日：1998-08-11

申请号：US837657

申请日：1997-04-22

Applicant: Michio Kadota ,  Kazuhiko Morozumi

Inventor： Michio Kadota ,  Kazuhiko Morozumi

IPC: H03H9/02 ,  H03H9/25

CPC classification number: H03H9/02669 ,  H03H9/02653

Abstract: An end face reflection type surface wave resonator utilizing SH type surface waves capable of providing a plurality of resonance characteristics is formed as a single element. In the surface wave resonator, surface waves are reflected between two opposite end faces of a piezoelectric substrate. The surface wave resonator has IDTs that form first and second resonant units. The distance L between the two end faces is selected to be within a range expressed by (.lambda..sub.1 /2).times.N.sub.1 .+-.(.lambda..sub.1 /20) (N.sub.1 is an integral number) where .lambda.1 represents the wavelength of a surface wave excited by the first resonant unit. The distance L is chosen to be out of a range expressed by (.lambda..sub.2 /2).times.N.sub.2 .+-.(.lambda..sub.1 /20) (N.sub.2 is an integral number) where .lambda..sub.2 represents the wavelength of a surface wave excited by the second resonant unit.

Abstract translation: 使用能够提供多个谐振特性的SH型表面波的端面反射型表面波谐振器形成为单个元件。 在表面波谐振器中，表面波在压电基板的两个相对端面之间被反射。 表面波谐振器具有形成第一和第二谐振单元的IDT。 两个端面之间的距离L被选择在由（λ1/ 2）xN1 +/-（λ1/ 20）（N1是整数）表示的范围内，其中λ1表示激发的表面波的波长 通过第一谐振单元。 距离L被选择在由（λ2/2）×N 2 +/-（λ1/20）表示的范围之外（N2是整数），其中λ2表示由第二谐振激发的表面波的波长 单元。

公开(公告)号：US5719538A

公开(公告)日：1998-02-17

申请号：US697822

申请日：1996-08-30

Applicant: Michio Kadota

Inventor： Michio Kadota

IPC: H03H9/02 ,  H03H9/64

CPC classification number: H03H9/02551

Abstract: A surface acoustic wave device using a quartz substrate has a larger electromechanical coupling coefficient than conventional devices. The SAW device is constructed by forming a thin ZnO film on a quartz substrate and disposing comb-like electrodes on the ZnO film.

Abstract translation: 使用石英基板的表面声波装置具有比常规装置更大的机电耦合系数。 SAW器件通过在石英衬底上形成薄的ZnO膜并在梳理电极上设置ZnO膜而构成。

公开(公告)号：US4308510A

公开(公告)日：1981-12-29

申请号：US160579

申请日：1980-06-18

Applicant: Hiromichi Yamada ,  Michio Kadota

Inventor： Hiromichi Yamada ,  Michio Kadota

IPC: H03H3/08 ,  H03H9/145 ,  H03H9/64 ,  H03H9/25

CPC classification number: H03H9/14517 ,  H03H9/6406

Abstract: A surface acoustic wave filter comprises an interdigital transducer structured to excite individually a symmetrical component and an asymmetrical component for the purpose of achieving an asymmetrical frequency characteristic. The interdiginal transducer is divided into a plurality of portion electrodes in the propagating direction of the surface acoustic wave and the divided portion electrodes are electrically connected in series. Accordingly, the electrode fingers adjacent to each other at the dividing region have different potentials. One of the electrode fingers adjacent to each other at the dividing region is configured to be bent or widened toward the other electrode finger, while the other electrode finger is configured to be bent on widened toward the one electrode finger at the extended portion thereof.

Abstract translation: 表面声波滤波器包括构造成单独激发对称分量的叉指换能器和用于实现不对称频率特性的非对称分量。 交叉信号传感器在声表面波的传播方向被分成多个部分电极，并且分割的部分电极串联电连接。 因此，在分割区域彼此相邻的电极指具有不同的电位。 在分割区域彼此相邻的电极指之一构造成朝向另一个电极指弯曲或加宽，而另一个电极指被构造成在其延伸部分处朝着一个电极指弯曲加宽。

公开(公告)号：US08256275B2

公开(公告)日：2012-09-04

申请号：US12555894

申请日：2009-09-09

Applicant: Hajime Yamada ,  Naoko Aizawa ,  Yoshihiro Koshido ,  Koji Fujimoto ,  Toru Yabe ,  Michio Kadota

Inventor： Hajime Yamada ,  Naoko Aizawa ,  Yoshihiro Koshido ,  Koji Fujimoto ,  Toru Yabe ,  Michio Kadota

IPC: G01N29/00

CPC classification number: G01N29/022 ,  G01N29/222 ,  G01N2291/022 ,  G01N2291/0423

Abstract: An in-liquid-substance detection sensor that achieves size reduction and detection accuracy improvement includes a piezoelectric substrate, at least two SAW devices provided on one major surface of the piezoelectric substrate and each having at least one IDT electrode defining a sensing portion, outer electrodes provided on the other major surface of the piezoelectric substrate and electrically connected to the SAW devices through vias extending through the piezoelectric substrate, a channel-defining member provided on the one major surface of the piezoelectric substrate so as to surround the SAW devices and a region connecting the SAW devices to each other, thereby defining sidewalls of a channel, and a protective member bonded to the one major surface of the piezoelectric substrate with the channel-defining member interposed therebetween, thereby sealing the channel, the protective member having at least two through holes communicating with the channel.

Abstract translation: 实现尺寸减小和检测精度提高的液体内物质检测传感器包括压电基板，设置在压电基板的一个主表面上的至少两个SAW器件，每个具有限定感测部分的至少一个IDT电极，外部电极 设置在压电基板的另一个主表面上，并且通过延伸穿过压电基板的通孔电连接到SAW器件，设置在压电基板的一个主表面上以便包围SAW器件的通道限定元件和区域 将所述SAW器件彼此连接，由此限定通道的侧壁，以及保护构件，其与所述压电基板的所述一个主表面接合，并且所述通道限定构件插入其间，从而密封所述通道，所述保护构件具有至少两个 通道与通道相通。