摘要:
Provided is a near-infrared shielding coating agent containing: (1) an inorganic near-infrared absorbing agent; (2) a tetrafunctional silicon compound represented by general formula Si(OR1)4, a hydrolysate thereof, and/or a condensation polymerization product thereof; (3) a trifunctional silicon compound represented by general formula R2Si(OR3)3, a hydrolysate thereof, and/or a condensation polymerization product thereof; (4) a silane coupling agent represented by one of the general formulas Si(X)3-Y or R4Si(X)2-Y, a hydrolysate thereof, and/or a condensation polymerization product thereof; and (5) a solvent. This coating agent allows the formation, at an ordinary temperature between 5° C. and 40° C., of a near-infrared shielding film that has a high film hardness and is not prone to cracks.
摘要:
A power generation system (200) of the present invention comprises a power generation portion (202) configured to generate power, a load power detecting means (205) configured to detect a load power supplied from a power source including the power generation portion to a load, an operation stop determination means (209) configured to stop a power generation operation of the power generation portion based on the load power detected by the load power detecting means and a stop condition; and a stop condition setting means (220) configured to set the stop condition, wherein the stop condition setting means sets different stop conditions in a plurality of time periods, and wherein the operation stop determination means stops the power generation operation of the power generation portion based on each of the different stop conditions set by the stop condition setting means and the load power detected by the load power detecting means.
摘要:
In a surface mounting apparatus having a pair of substrate fixing portions disposed opposite to each other and serving to support and fix opposed ends of a substrate respectively and a mounting head for mounting a component held by an attached nozzle on the substrate which is supported and fixed by the substrate fixing portion, including an air injecting portion disposed close to the substrate fixing portion and serving to inject air like a curtain from an outside of the substrate which is supported and fixed above an upper surface of the substrate, and an air suctioning portion disposed close to the other substrate fixing portion and serving to suction the air at the outside of the substrate which is opposed to an ejecting direction of the air.
摘要:
The object of the invention is to provide a fuel cell system capable of performing appropriate, expeditious shutdown operation without use of an auxiliary power source and inert gas (nitrogen gas) in the event of an emergency stop situation such as a power failure. The fuel cell system (100) comprises: a fuel cell (12) configured to generate power by consuming a fuel gas and having an outlet port (104) through which the fuel gas flows out; a moisture removal unit (15) configured to remove moisture contained in the fuel gas that has been sent through the outlet port (104); a burner (16) located downstream of the moisture removal unit (15), for combusting the fuel gas; and a gas pipe on-off valve (18) configured to open and close a pipe (106) that makes the moisture removal unit (15) and the burner (16) communicate with each other, and the fuel cell system (100) is designed such that the gas pipe on-off valve (18) closes when the power generation stops.
摘要:
This specification relates to a semiconductor device that comprises a semiconductor substrate 11, a source region 12 and a drain region 13, which are formed on the semiconductor substrate 11 with a channel region 14 therebetween; a floating gate electrode 152 that is formed on the channel region 14 with a gate insulator film 151 therebetween; a ferroelectric film 154 that is formed on the floating gate electrode 152; and a control gate electrode 156 that is formed on the ferroelectric film 154, wherein intermediate insulator films 153 and 155 are formed between at least one of the pairs consisting of the floating gate electrode 152 and the ferroelectric film 154, and the ferroelectric film 154 and the control gate electrode 156, and the intermediate insulator films 153 and 155 are made of hafnium oxide that contains nitrogen atoms.
摘要:
A sewing machine zigzag pattern changing device comprises: a cam drive shaft (11) supported in a sewing machine frame in such a manner that it can be rotated deceleratingly in linking with a sewing machine main shaft; a needle swing cam (13) supported on the cam drive shaft and including at least two cams which are spaced apart from each other in the axial direction of the needle swing cam and respectively correspond to different needle swing patterns; a needle swing drive shaft (20) disposed in parallel to the cam drive shaft, supported in the sewing machine frame in such a manner that it is capable of swing motion about the axis thereof, and connected to a needle mechanism so that it can move a needle in a direction at right angles to a cloth feeding direction due to the above swing motion; a cam body (50) including a pair of contact bodies separately engageable with and removable from the two cams, capable of transmitting the swing motion of the contact body due to one of the needle swing cams to be engaged to the needle swing drive shaft, and supported on the needle swing drive shaft in such a manner that it can be moved in the axial direction of the needle swing drive shaft; switch means (59) connected to the cam body for moving the cam body in the axial direction of the needle swing drive shaft to one position where one contact member can be engaged with one cam groove as well as to another position where the other contact member can be engaged with the other cam groove; a guide member disposed in parallel to the axial direction of the needle swing drive shaft; and, a member to be guided engageable with the guide member and relatively movable in the axial direction of the needle swing drive shaft.
摘要:
A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers.