公开(公告)号：US20070181850A1

公开(公告)日：2007-08-09

申请号：US11700027

申请日：2007-01-31

Applicant: Tetsuya Kamimura ,  Kenji Takenouchi

Inventor： Tetsuya Kamimura ,  Kenji Takenouchi

IPC: C09K13/00 ,  C09K13/02 ,  C09K13/06

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: According to an aspect of the invention, there is provided a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid including colloidal silica covered at a portion of a surface thereof with aluminum, and an oxidizing agent, wherein the polishing liquid has a pH of from 2 to 7.

Abstract translation: 根据本发明的一个方面，提供了一种用于抛光半导体集成电路的阻挡层的抛光液，所述抛光液包括在其表面的一部分被铝覆盖的胶体二氧化硅和氧化剂，其中抛光 液体的pH为2〜7。

公开(公告)号：US20070181534A1

公开(公告)日：2007-08-09

申请号：US11698817

申请日：2007-01-29

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: B24D3/02 ,  C09K13/00 ,  B44C1/22 ,  H01L21/302 ,  C03C15/00

CPC classification number: H01L21/3212 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/7684 ,  H01L21/76843

Abstract: A barrier polishing liquid is provided that includes (a) a nonionic surfactant represented by Formula (I) below, (b) at least one type of organic acid selected from the group consisting of an aromatic sulfonic acid, an aromatic carboxylic acid, and a derivative thereof, (c) colloidal silica, and (d) benzotriazole or a derivative thereof. (In Formula (I), R1 to R6 independently denote a hydrogen atom or an alkyl group having 1 to 10 carbons, X and Y independently denote an ethyleneoxy group or a propyleneoxy group, and m and n independently denote an integer of 0 to 20.) There is also provided a chemical mechanical polishing method that includes supplying the barrier polishing liquid to a polishing pad on a polishing platen at a flow rate per unit area of a semiconductor substrate per unit time of 0.035 to 0.25 mL/(min·cm2), and polishing by making the polishing pad and a surface to be polished move relative to each other while they are in a contacted state.

Abstract translation: 提供了一种阻挡抛光液，其包括（a）由下式（I）表示的非离子表面活性剂，（b）至少一种选自芳族磺酸，芳族羧酸和 衍生物，（c）胶体二氧化硅，（d）苯并三唑或其衍生物。 （式（I）中，R 1至R 6独立地表示氢原子或具有1至10个碳的烷基，X和Y独立地表示亚乙基氧基或 丙烯氧基，m和n独立地表示0至20的整数。）还提供了一种化学机械抛光方法，其包括以每单位面积的流量将抛光垫供给到研磨台板上的抛光垫 每单位时间的半导体衬底为0.035至0.25mL /（min·cm 2），并且通过制造抛光垫和待抛光表面进行抛光，同时它们处于接触状态 州。