公开(公告)号：US08647523B2

公开(公告)日：2014-02-11

申请号：US13415390

申请日：2012-03-08

Applicant: Tomonori Takahashi ,  Tadashi Inaba ,  Atsushi Mizutani ,  Bing Du ,  William A. Wojtczak ,  Kazutaka Takahashi ,  Tetsuya Kamimura

Inventor： Tomonori Takahashi ,  Tadashi Inaba ,  Atsushi Mizutani ,  Bing Du ,  William A. Wojtczak ,  Kazutaka Takahashi ,  Tetsuya Kamimura

IPC: C03C15/00

CPC classification number: H01L21/32134 ,  C09K13/06 ,  C23F1/16 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/28518 ,  H01L21/76843

Abstract: This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.

Abstract translation: 本公开涉及含有至少一种磺酸，至少一种含卤化物阴离子的化合物，卤化物为氯化物或溴化物，至少一种含有硝酸根或亚硝酰基离子的化合物和水的蚀刻组合物。 所述至少一种磺酸可以为所述组合物的约25重量％至约95重量％。 卤化物阴离子可以是氯化物或溴化物，并且可以是组合物的约0.01重量％至约0.5重量％。 硝酸盐或亚硝酰离子可以为组合物的约0.1重量％至约20重量％。 水可以是组合物的至少约3重量％。

公开(公告)号：US20120231632A1

公开(公告)日：2012-09-13

申请号：US13415390

申请日：2012-03-08

Applicant: Tomonori Takahashi ,  Tadashi Inaba ,  Atsushi Mizutani ,  Bing Du ,  William A. Wojtczak ,  Kazutaka Takahashi ,  Tetsuya Kamimura

Inventor： Tomonori Takahashi ,  Tadashi Inaba ,  Atsushi Mizutani ,  Bing Du ,  William A. Wojtczak ,  Kazutaka Takahashi ,  Tetsuya Kamimura

IPC: H01L21/306 ,  C09K13/06 ,  C09K13/00

CPC classification number: H01L21/32134 ,  C09K13/06 ,  C23F1/16 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/28518 ,  H01L21/76843

Abstract: This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.

Abstract translation: 本公开涉及含有至少一种磺酸，至少一种含卤化物阴离子的化合物，卤化物为氯化物或溴化物，至少一种含有硝酸根或亚硝酰基离子的化合物和水的蚀刻组合物。 所述至少一种磺酸可以为所述组合物的约25重量％至约95重量％。 卤化物阴离子可以是氯化物或溴化物，并且可以是组合物的约0.01重量％至约0.5重量％。 硝酸盐或亚硝酰离子可以为组合物的约0.1重量％至约20重量％。 水可以是组合物的至少约3重量％。

公开(公告)号：US08932479B2

公开(公告)日：2015-01-13

申请号：US13071539

申请日：2011-03-25

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: C09K13/06 ,  C09K3/14 ,  H01L21/3105 ,  C09G1/02

CPC classification number: H01L21/31053 ,  C09G1/02 ,  C09K3/1463

Abstract: Provided is a polishing liquid which is used for chemical mechanical polishing of a body to be polished having a layer containing polysilicon or a modified polysilicon, and using which the polishing rate of a layer containing a silicon-based material other than polysilicon is high and polishing of the layer containing polysilicon can be selectively suppressed. The polishing liquid includes components (A), (B), and (C), has a pH of from 1.5 to 7.0, and is capable of selectively polishing a second layer with respect to a first layer: (A) colloidal silica particles having a negative ζ potential; (B) phosphoric acid or an organic phosphonic acid compound represented by the following Formula (1) or (2); and (C) an anionic surfactant having at least one group represented by the following Formulae (I) to (IV): R2—C(R3)3-a—(PO3H2)a  Formula (1): R4—N(R5)m—(CH2—PO3H2)n  Formula (2): —PO3X2  Formula (I): —OPO3X2  Formula (II): —COOX  Formula (III): —SO3X  Formula (IV).

Abstract translation: 本发明提供一种抛光液，其用于具有含多晶硅层或改性多晶硅层的被研磨体的化学机械抛光，并且使用其中含有多晶硅以外的硅系材料的层的研磨速度高并进行抛光 可以选择性地抑制包含多晶硅的层。 抛光液包含成分（A），（B）和（C），其pH为1.5〜7.0，能够相对于第一层选择性地研磨第二层：（A）具有 负ζ电位; （B）磷酸或由下式（1）或（2）表示的有机膦酸化合物; （C）具有至少一个由下式（I）至（IV）表示的基团的阴离子表面活性剂：R2-C（R3）3-a-（PO3H2）a式（1）：R4-N（R5） 式（II）：-PO 3 X 2式（I）：-OPO 3 X 2式（II）：-COOX式（III）：-SO 3 X式（IV）。

公开(公告)号：US09688912B2

公开(公告)日：2017-06-27

申请号：US13560366

申请日：2012-07-27

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: C09K13/06 ,  C09K13/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/00 ,  C09K13/06 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134

Abstract: A method of etching a semiconductor substrate, having the steps of: providing a semiconductor substrate having a first layer containing Ti and a second layer containing at least one of Cu, SiO, SiN, SiOC and SiON; providing an etching liquid containing, in an aqueous medium, a basic compound composed of an organic amine compound and an oxidizing agent, the etching liquid having a pH from 7 to 14; and applying the etching liquid to the semiconductor substrate to selectively etch the first layer of the semiconductor substrate.

公开(公告)号：US09048195B2

公开(公告)日：2015-06-02

申请号：US13192982

申请日：2011-07-28

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: C09K13/04 ,  H01L21/3105 ,  C09G1/02 ,  H01L21/8234 ,  H01L21/8238

CPC classification number: H01L21/31053 ,  C09G1/02 ,  H01L21/823437 ,  H01L21/823828

Abstract: Provided is a polishing fluid that has a fast polishing rate, and can selectively suppress polishing of layers including polysilicon or modified polysilicon during the chemical mechanical polishing in the manufacture of semiconductor integrated circuits, and a polishing method using the same. A polishing fluid used for the chemical mechanical polishing in which each of the components represented by the following (1) and (2) is included, the pH is 1.5 to 5.0, and a polishing workpiece can be polished in a range of a ratio represented by RR (other)/RR (p-Si) when the polishing rate of the first layer is RR (p-Si), and the polishing rate of the second layer is RR (other) of 1.5 to 200. (1) Colloidal silica particles (2) At least one inorganic phosphate compound selected from phosphoric acid, pyrophosphoric acid, and polyphosphoric acid.

Abstract translation: 提供了具有快速抛光速率的抛光液，并且可以选择性地抑制在半导体集成电路的制造中的化学机械抛光期间包括多晶硅或改性多晶硅的层的抛光以及使用其的抛光方法。 用于化学机械抛光的抛光液，其中包括由以下（1）和（2）表示的每个组分，pH为1.5至5.0，并且可以以表示的比例的范围抛光抛光工件 当第一层的抛光速率为RR（p-Si）时，RR（其他）/ RR（p-Si），第二层的抛光速率为RR（其他）为1.5〜200。（1）胶体 二氧化硅颗粒（2）至少一种选自磷酸，焦磷酸和多磷酸的无机磷酸盐化合物。

公开(公告)号：US08911643B2

公开(公告)日：2014-12-16

申请号：US12453970

申请日：2009-05-28

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: C09K13/06 ,  H01L21/3105 ,  C09G1/02 ,  C09K3/14 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/31055

Abstract: A polishing liquid which is used for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing polysilicon or modified polysilicon and a second layer containing at least one selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxycarbide, and silicon oxynitride, the polishing liquid having a pH of 1.5 to 7.0, including (1) colloidal silica particles, (2) an organic acid, and (3) an anionic surfactant, and being capable of selectively polishing the second layer with respect to the first layer.

Abstract translation: 一种抛光液，其用于在半导体集成电路的制造的平坦化工艺中对被研磨体进行化学机械抛光，所述抛光体至少包括含有多晶硅或改性多晶硅的第一层，以及含有 选自氧化硅，氮化硅，碳化硅，碳氮化硅，碳氧化硅和氮氧化硅中的至少一种，所述抛光液的pH为1.5〜7.0，包括（1）胶体二氧化硅颗粒，（2） 有机酸和（3）阴离子表面活性剂，并且能够相对于第一层选择性地抛光第二层。

公开(公告)号：US07927294B2

公开(公告)日：2011-04-19

申请号：US11655408

申请日：2007-01-19

Applicant: Tetsuya Kamimura ,  Fujie Hayakawa ,  Kazuyuki Takeda

Inventor： Tetsuya Kamimura ,  Fujie Hayakawa ,  Kazuyuki Takeda

IPC: A61H7/00

CPC classification number: A61H7/005 ,  A61H2201/1215 ,  A61H2201/1463 ,  A61H2201/149 ,  A61H2205/021

Abstract: Disclosed are devices capable of performing a massage and wash on a scalp or massage on an affected area gently and effectively by a brush section or a treating section thereof. A plurality of projections are integrally formed on a surface of a flexible body plate of brush section, so that the projections are symmetrical with respect to an axis line A and an axis line D of the projection is perpendicular with the surface of the body plate. An edge of the body plate is fixed on a frame. A motor serving as a drive section is activated allowing a reciprocating drive means to repeatedly deform the body plate coupled thereto between an upwardly-deflected curved concave position and a downwardly-deflected curved convex position along the axis line A, thereby allowing each distance among a plurality of the projections to open and close-repeatedly to provide an repetitive action of kneading and pushing/stretching the scalp. Accordingly, the scalp massage and the scalp and hair wash are achieved.

Abstract translation: 公开了能够通过毛刷部分或其治疗部分轻轻地和有效地对头皮进行按摩和洗涤或按摩受影响的部位的装置。 多个凸起一体地形成在刷部的柔性主体板的表面上，使得突起相对于轴线A对称，并且突起的轴线D与主体板的表面垂直。 体板的边缘固定在框架上。 用作驱动部分的电动机被激活，允许往复驱动装置使沿着轴线A向上弯曲的弯曲的凹形位置和向下偏转的弯曲凸起位置之间的联接到其上的主体板反复变形，从而允许 多个突起被打开和关闭重复，以提供捏合和推压/拉伸头皮的重复动作。 因此，实现了头皮按摩和头皮洗发。

公开(公告)号：US09070636B2

公开(公告)日：2015-06-30

申请号：US13245096

申请日：2011-09-26

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: H01L21/311 ,  G03F7/42 ,  H01L21/02 ,  C11D11/00

CPC classification number: H01L21/31133 ,  C11D11/0047 ,  G03F7/423 ,  H01L21/02071

Abstract: A cleaning agent for a semiconductor substrate, which is capable of exerting cleaning power equivalent to that of an SPM cleaning agent, greatly improving damage of a semiconductor substrate by the SPM cleaning agent, and efficiently stripping and removing impurities adhered to the surface of the semiconductor substrate, particularly attached substances such as an ion-implanted resist, a cleaning method using the cleaning agent, and a method for producing a semiconductor element are provided. The cleaning agent for a semiconductor substrate comprises sulfuric acid, hydrogen peroxide and an alkylene carbonate. The method for cleaning a semiconductor substrate comprises cleaning the semiconductor substrate with sulfuric acid, hydrogen peroxide and an alkylene carbonate in combination.

Abstract translation: 能够施加与SPM清洗剂相当的清洗能力的半导体基板用清洗剂，大大提高了SPM清洗剂对半导体基板的损伤，有效地剥离和去除附着在半导体表面上的杂质 衬底，特别附着的物质，例如离子注入的抗蚀剂，使用该清洁剂的清洁方法，以及制造半导体元件的方法。 用于半导体衬底的清洁剂包括硫酸，过氧化氢和碳酸亚烷基酯。 清洗半导体衬底的方法包括用硫酸，过氧化氢和碳酸亚烷基酯组合清洗半导体衬底。

公开(公告)号：US08409467B2

公开(公告)日：2013-04-02

申请号：US12209409

申请日：2008-09-12

Applicant: Toshiyuki Saie ,  Tetsuya Kamimura

Inventor： Toshiyuki Saie ,  Tetsuya Kamimura

IPC: C09K13/00

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: A polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, which liquid includes: a quaternary ammonium cation; a corrosion inhibiting agent; a polymer compound having a sulfo group at a terminal; inorganic particles; and an organic acid, the pH of the polishing liquid being in the range of 1 to 7.

Abstract translation: 一种用于抛光半导体集成电路的阻挡层的抛光液，该液体包括：季铵阳离子; 腐蚀抑制剂; 末端具有磺基的高分子化合物; 无机颗粒; 和有机酸，研磨液的pH在1〜7的范围内。

公开(公告)号：US20090087989A1

公开(公告)日：2009-04-02

申请号：US12236965

申请日：2008-09-24

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: C09K13/00 ,  H01L21/302

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: The invention provides a polishing liquid used for chemical mechanical polishing during planarization of a semiconductor integrated circuit, having at least: a benzotriazole compound (A) represented by the following Formula (1); an acid (B); and a water-soluble polymer (C). The invention further provides a polishing method for planarizing a semiconductor integrated circuit, the polishing method includes at least essentially chemically and mechanically polishing a barrier layer of the semiconductor integrated circuit using the polishing liquid. In Formula (1), each of R01 to R05 independently represents a hydrogen atom or an alkyl group, and at least one of R01 to R05 represents an alkyl group.

Abstract translation: 本发明提供一种用于半导体集成电路的平面化期间的化学机械抛光的抛光液，其至少具有：由下式（1）表示的苯并三唑化合物（A）; 酸（B）; 和水溶性聚合物（C）。 本发明还提供了一种用于平面化半导体集成电路的抛光方法，所述抛光方法至少基本上化学和机械地抛光使用抛光液体的半导体集成电路的阻挡层。 式（1）中，R 01〜R 05各自独立地表示氢原子或烷基，R 01〜R 05中的至少一个表示烷基。