公开(公告)号：US11087954B2

公开(公告)日：2021-08-10

申请号：US16517390

申请日：2019-07-19

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Joe Wang

IPC: H01J37/22 ,  G01N21/95 ,  G01N21/956 ,  H01J37/14 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J37/153

Abstract: A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

公开(公告)号：US20200326632A1

公开(公告)日：2020-10-15

申请号：US16848724

申请日：2020-04-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Wei Fang ,  Lingling Pu ,  Zhichao Chen ,  Haili Zhang ,  Pengcheng Zhang

IPC: G03F7/20

Abstract: A method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.

公开(公告)号：US10679340B2

公开(公告)日：2020-06-09

申请号：US16160958

申请日：2018-10-15

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Zhao-Li Zhang ,  Jack Jau

IPC: G06K9/00 ,  G06T7/00 ,  G06K9/46

Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.