公开(公告)号：US20220119948A1

公开(公告)日：2022-04-21

申请号：US17074035

申请日：2020-10-19

Applicant: Applied Materials, Inc.

Inventor： Jared Ahmad Lee ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Kenneth Brian Doering ,  Dhritiman Subha Kashyap ,  Kartik Shah

IPC: C23C16/455 ,  C23C16/44

Abstract: Gas distribution assemblies and methods for providing a flow of gases to a process station are described. The gas distribution assemblies comprise a pumping liner with a showerhead and a gas funnel positioned therein. The pumping liner has an inner wall that slants at a first angle relative to a central axis of the gas distribution assembly so that the inner wall adjacent the bottom wall of the pumping liner is closer to the central axis than the inner wall adjacent the top wall. The gas funnel and pumping liner form a plenum between the outer wall of the gas funnel, a cavity in the bottom wall of the gas funnel and the inner wall of the pumping liner.

公开(公告)号：US20210394144A1

公开(公告)日：2021-12-23

申请号：US17466756

申请日：2021-09-03

Applicant: Applied Materials, Inc.

Inventor： Jared Ahmad Lee ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Dhritiman Subha Kashyap ,  Michael Rice

IPC: B01J8/18 ,  H01J37/32

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

公开(公告)号：US20210090877A1

公开(公告)日：2021-03-25

申请号：US17025373

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Philip A. Kraus ,  Joseph AuBuchon

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.

公开(公告)号：US20210087688A1

公开(公告)日：2021-03-25

申请号：US17025405

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Kevin Griffin ,  Hanhong Chen

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/67

Abstract: Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface. The methods include using a variable flow valve creating predetermined pulse shape when a reactant is provided on a substrate surface.

公开(公告)号：US20200071827A1

公开(公告)日：2020-03-05

申请号：US16555759

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon

IPC: C23C16/455

Abstract: A precursor delivery system is described herein. Some embodiments provide a precursor delivery system capable of providing a uniform gas flow comprising precursor into a processing chamber for atomic layer deposition processes. Some embodiments of the precursor delivery system comprise a reservoir with an inlet line, an outlet line and an outlet valve. Further embodiments comprise a precursor source, an inlet valve, a heater, a processing chamber and a controller. Additional embodiments relate to methods for using a precursor delivery system.

公开(公告)号：US20200030766A1

公开(公告)日：2020-01-30

申请号：US16523252

申请日：2019-07-26

Applicant: Applied Materials, Inc.

Inventor： Jared Ahmad Lee ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Dhritiman Subha Kashyap ,  Michael Rice

IPC: B01J8/18 ,  H01J37/32

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

公开(公告)号：US20190131167A1

公开(公告)日：2019-05-02

申请号：US16171785

申请日：2018-10-26

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Mandyam Sriram

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/683 ,  H01L21/67

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

公开(公告)号：US20240360553A1

公开(公告)日：2024-10-31

申请号：US18765501

申请日：2024-07-08

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Ashutosh Agarwal

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4412 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/68764

Abstract: Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

公开(公告)号：US20240352586A1

公开(公告)日：2024-10-24

申请号：US18761994

申请日：2024-07-02

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Robert Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/45544 ,  C23C16/52

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

公开(公告)号：US20240096688A1

公开(公告)日：2024-03-21

申请号：US18523394

申请日：2023-11-29

Applicant: Applied Materials, Inc.

Inventor： Michael Robert Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Mandyam Sriram

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/68785 ,  C23C16/4409 ,  C23C16/45525 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68764 ,  H01L21/68771

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.