LOW TEMPERATURE POLY-SILICON TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE
    32.
    发明申请
    LOW TEMPERATURE POLY-SILICON TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE 审中-公开
    低温聚硅晶体管阵列基板及其制造方法及显示装置

    公开(公告)号:US20160300957A1

    公开(公告)日:2016-10-13

    申请号:US15084802

    申请日:2016-03-30

    摘要: The embodiments of the present invention disclose a low temperature (LTPS) transistor array substrate and a method of fabricating the same, and a display device. The LTPS transistor array substrate comprises a substrate; a poly-silicon semiconductor active region provided on the substrate; agate insulated from the poly-silicon semiconductor active region; and a dielectric spacer region provided on a side wall of the gate, wherein a portion of the poly-silicon semiconductor active region corresponding to the dielectric spacer region comprises a buffer region, and the dielectric spacer region surrounds the side wall of the gate and covers the buffer region.

    摘要翻译: 本发明的实施例公开了低温(LTPS)晶体管阵列基板及其制造方法以及显示装置。 LTPS晶体管阵列基板包括基板; 设置在所述基板上的多晶硅半导体有源区; 与多晶硅半导体有源区绝缘的玛瑙; 以及设置在所述栅极的侧壁上的电介质间隔区,其中与所述电介质间隔区相对应的所述多晶硅半导体有源区的一部分包括缓冲区,并且所述电介质间隔区围绕所述栅极的侧壁 缓冲区。

    Touch Substrate and Preparation Method Thereof, and Touch Device

    公开(公告)号:US20220197434A1

    公开(公告)日:2022-06-23

    申请号:US17359508

    申请日:2021-06-26

    IPC分类号: G06F3/044 G06F3/041

    摘要: Provided are a touch substrate, a preparation method thereof and a touch device. The touch substrate includes a substrate, and a first conductive layer, a first insulating layer and a second conductive layer sequentially stacked on the substrate. The first conductive layer includes a first capacitive touch electrode, a first wiring and a second wiring. The first wiring is electrically connected to the first capacitive touch electrode, and the second wiring is insulated from the first capacitive touch electrode. The first insulating layer includes at least one first via. The second conductive layer includes a second capacitive touch electrode, which is electrically connected to the second wiring through the first via. The second conductive layer further includes an additional functional channel, which is insulated from the second capacitive touch electrode.

    DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20220139968A1

    公开(公告)日:2022-05-05

    申请号:US17357347

    申请日:2021-06-24

    IPC分类号: H01L27/12

    摘要: Disclosed are a display substrate, a manufacturing method thereof, a display panel and a display device. The display panel comprises: a base substrate provided with a first area and a second area which are not overlapped with each other; a low temperature poly-silicon transistor arranged in the first area, the low temperature poly-silicon transistor comprises a poly-silicon active layer; an oxide transistor arranged in the second area, the oxide transistor comprises a first gate electrode; the first gate electrode is arranged in a same layer as the poly-silicon active layer, and a material of the first gate electrode is heavily-doped poly-silicon.

    QLED DISPLAY PANEL AND PREPARATION METHOD THEREOF AND DISPLAY APPARATUS

    公开(公告)号:US20210249620A1

    公开(公告)日:2021-08-12

    申请号:US17241147

    申请日:2021-04-27

    发明人: Dong LI

    IPC分类号: H01L51/50 H01L51/00 H01L51/56

    摘要: Disclosed are a QLED display panel and a preparation method thereof and a display apparatus. The QLED display panel includes: a base substrate; a second electrode, an electron transport layer, a quantum dot luminescent layer, a hole transport layer, a hole injection layer, and a first electrode disposed sequentially on the base substrate; and the QLED display panel further including: a first ionic coordination compound layer between the quantum dot luminescent layer and the hole transport layer.

    QLED DISPLAY PANEL AND PREPARATION METHOD THEREOF AND DISPLAY APPARATUS

    公开(公告)号:US20200044174A1

    公开(公告)日:2020-02-06

    申请号:US16420705

    申请日:2019-05-23

    发明人: Dong LI

    IPC分类号: H01L51/50 H01L51/56 H01L51/00

    摘要: Disclosed are a QLED display panel and a preparation method thereof and a display apparatus. The QLED display panel includes: a first and second substrates oppositely disposed; a first electrode, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer and a second electrode formed between the first and second substrates and disposed sequentially along a direction from the first substrate to the second substrate; and a first ionic coordination compound layer formed on a side facing quantum dot luminescent layer, of hole transport layer. The first ionic coordination compound layer includes a first positive and a first negative ion portions; the first positive ion portion is on a side close to hole transport layer, of first ionic coordination compound layer, and the first negative ion portion is on a side close to quantum dot luminescent layer, of first ionic coordination compound layer.