摘要:
A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The method comprises forming an active layer on a substrate, wherein source-and-drain-to-be-formed regions of the active layer are thicker than a semiconductor region between the source-and-drain-to-be-formed regions, and by a patterning process, forming a gate on the active layer, and forming a pattern of source and drain in the source-and-drain-to-be-formed regions of the active layer.
摘要:
The embodiments of the present invention disclose a low temperature (LTPS) transistor array substrate and a method of fabricating the same, and a display device. The LTPS transistor array substrate comprises a substrate; a poly-silicon semiconductor active region provided on the substrate; agate insulated from the poly-silicon semiconductor active region; and a dielectric spacer region provided on a side wall of the gate, wherein a portion of the poly-silicon semiconductor active region corresponding to the dielectric spacer region comprises a buffer region, and the dielectric spacer region surrounds the side wall of the gate and covers the buffer region.
摘要:
Provided are a touch substrate, a preparation method thereof and a touch device. The touch substrate includes a substrate, and a first conductive layer, a first insulating layer and a second conductive layer sequentially stacked on the substrate. The first conductive layer includes a first capacitive touch electrode, a first wiring and a second wiring. The first wiring is electrically connected to the first capacitive touch electrode, and the second wiring is insulated from the first capacitive touch electrode. The first insulating layer includes at least one first via. The second conductive layer includes a second capacitive touch electrode, which is electrically connected to the second wiring through the first via. The second conductive layer further includes an additional functional channel, which is insulated from the second capacitive touch electrode.
摘要:
Disclosed are a display substrate, a manufacturing method thereof, a display panel and a display device. The display panel comprises: a base substrate provided with a first area and a second area which are not overlapped with each other; a low temperature poly-silicon transistor arranged in the first area, the low temperature poly-silicon transistor comprises a poly-silicon active layer; an oxide transistor arranged in the second area, the oxide transistor comprises a first gate electrode; the first gate electrode is arranged in a same layer as the poly-silicon active layer, and a material of the first gate electrode is heavily-doped poly-silicon.
摘要:
Disclosed are a QLED display panel and a preparation method thereof and a display apparatus. The QLED display panel includes: a base substrate; a second electrode, an electron transport layer, a quantum dot luminescent layer, a hole transport layer, a hole injection layer, and a first electrode disposed sequentially on the base substrate; and the QLED display panel further including: a first ionic coordination compound layer between the quantum dot luminescent layer and the hole transport layer.
摘要:
A display device and a manufacturing method thereof are provided. The display device includes: a flexible substrate including a display portion and a back portion that are connected with each other, the display portion including a display side and a back side opposite to the display side, the back portion being located at the back side of the display portion; and an antenna located on the back portion.
摘要:
A flexible display panel has a display area, a peripheral area surrounding the display area, and a bending area having at least one overlapping area with the peripheral area. The flexible display panel includes a plurality of conductive layers disposed in the display area, and at least one interdigital capacitor disposed in the at least one overlapping area. One of the at least one interdigital capacitor is disposed in a same layer with a same material as one of the plurality of conductive layers.
摘要:
The embodiments of the disclosure provide a flexible display panel, including a flexible substrate, the flexible substrate including a plurality of cylindrical surface stretching bodies in an array, every two adjacent cylindrical surface stretching bodies being connected by their side edges, and a flexible device on the flexible substrate, the flexible device being conformal with the flexible substrate. The embodiments also provide a display device including the flexible display panel and a method for manufacturing the flexible display panel.
摘要:
The disclosure provides a display substrate, a method for manufacturing the same and a display device, belonging to the display technology field, to solve the problem that ultraviolet irradiation has an adverse effect on the service life of existing OLED devices. The display substrate disclosed herein includes a light processing layer which comprising a condensed-ring conjugated polymer. The light processing layer can protect the display parts below it and prevent the display parts from being exposed to ambient light and reducing their service life.
摘要:
Disclosed are a QLED display panel and a preparation method thereof and a display apparatus. The QLED display panel includes: a first and second substrates oppositely disposed; a first electrode, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer and a second electrode formed between the first and second substrates and disposed sequentially along a direction from the first substrate to the second substrate; and a first ionic coordination compound layer formed on a side facing quantum dot luminescent layer, of hole transport layer. The first ionic coordination compound layer includes a first positive and a first negative ion portions; the first positive ion portion is on a side close to hole transport layer, of first ionic coordination compound layer, and the first negative ion portion is on a side close to quantum dot luminescent layer, of first ionic coordination compound layer.