公开(公告)号：US20190172953A1

公开(公告)日：2019-06-06

申请号：US15992909

申请日：2018-05-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  Hefei Xinsheng Optoelectronics Technology Co., Ltd

Inventor： Yuankui DING ,  Ce ZHAO ,  Guangcai YUAN ,  Yingbin HU ,  Leilei CHENG ,  Jun CHENG ,  Bin ZHOU

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure discloses a TFT, a manufacturing method, an array substrate, a display panel, and a device. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.

公开(公告)号：US20160013317A1

公开(公告)日：2016-01-14

申请号：US14435688

申请日：2014-06-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce ZHAO ,  Chunsheng JIANG ,  Guangcai YUAN

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/426 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L21/02565 ,  H01L21/426 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first, second, and third pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.

Abstract translation: 提供薄膜晶体管及其制造方法，阵列基板和显示装置。 该方法包括在基板上形成栅电极，栅极绝缘层，金属氧化物半导体（MOS）有源层，源电极和漏电极。 MOS活性层包括形成包含与源电极和漏电极直接接触的第一，第二和第三图案的氧化铟系二元金属氧化物的图案层。 在源电极和漏电极上形成的绝缘层用作保护层，氧化铟系二元金属氧化物的图案层通过离子注入工艺注入金属掺杂离子，并进行退火，使得氧化铟 将第三图案的串联二元金属氧化物转换为氧化铟系多重金属氧化物以形成MOS活性层。