公开(公告)号：US07763919B2

公开(公告)日：2010-07-27

申请号：US11612647

申请日：2006-12-19

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14603 ,  H01L27/1463

Abstract: A CMOS image sensor capable of improving characteristics of the image sensor by preventing damage to a photodiode region and a method for manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate on which a device isolation region and an active region are defined; a photodiode region formed at the active region; a conductive plug formed on the photodiode region for connecting the photodiode region to a metal wiring; and a transistor formed enclosing the conductive plug.

Abstract translation: 提供了能够通过防止光电二极管区域的损坏来提高图像传感器的特性的CMOS图像传感器及其制造方法。 CMOS图像传感器包括：半导体衬底，其上限定了器件隔离区域和有源区域; 形成在有源区的光电二极管区; 形成在所述光电二极管区域上用于将所述光电二极管区域连接到金属布线的导电插塞; 以及形成围绕导电插塞的晶体管。

公开(公告)号：US20100026869A1

公开(公告)日：2010-02-04

申请号：US12508152

申请日：2009-07-23

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/18 ,  H04N5/335

CPC classification number: H01L27/14636 ,  H01L27/1462 ,  H01L27/14692

Abstract: An image sensor and a method for manufacturing the same are provided. The image sensor comprises a readout circuitry, an interlayer dielectric, an interconnection, and a CuInGaSe2 (CIGS) image sensing device. The readout circuitry is disposed on a first substrate. The interlayer dielectric is disposed over the first substrate. The interconnection is in the interlayer dielectric and electrically connected to the readout circuitry. The CIGS image sensing device is disposed over the interconnection and electrically connected to the readout circuitry through the interconnection.

Abstract translation: 提供了图像传感器及其制造方法。 图像传感器包括读出电路，层间电介质，互连和CuInGaSe2（CIGS）图像感测装置。 读出电路设置在第一基板上。 层间电介质设置在第一衬底上。 互连在层间电介质中并电连接到读出电路。 CIGS图像感测装置设置在互连上并通过互连电连接到读出电路。

公开(公告)号：US20090205175A1

公开(公告)日：2009-08-20

申请号：US12305140

申请日：2008-03-27

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: A43C11/24

CPC classification number: A43C1/00 ,  A43B3/0078 ,  A43B23/24 ,  A43C11/22 ,  A43C11/24 ,  Y10T24/3703

Abstract: The present invention relates to a shoelace accessory provided to a shoelace to create an aesthetic appearance on the midfoot portion of a shoe while preventing the shoelace from being loosened, by preventing respective ornamental elements, threaded on the shoelace, from being moved or deformed. The shoelace is inserted through pairs of eyelets of an eyestay provided to the midfoot portion of a shoe so that the shoelace can be tightened and loosened to allow the shoe to be secured around a wearer's foot in conformity with a size of the foot, ornamental elements are threaded on the shoelace such that they are respectively placed between the respective pairs of eyelets and are positioned side by side in a rearward direction so as to independently or cooperatively provide an aesthetic appearance, and stoppers are integrally formed on surfaces of the ornamental elements.

Abstract translation: 本发明涉及一种鞋带配件，其提供给鞋带，以通过防止穿着鞋带上的相应装饰元件的移动或变形来防止鞋带松动，从而在鞋的中脚部分产生美学外观。 鞋带通过设置在鞋的中脚部分的目镜的孔眼插入，使得鞋带可以被紧固和松开，以使鞋根据脚的大小固定在穿着者的脚上，装饰元件 穿在鞋带上，使得它们分别放置在各对孔眼之间并且沿向后的方向并排定位，以便独立地或协同地提供美观的外观，并且止挡件一体地形成在装饰元件的表面上。

公开(公告)号：US07544530B2

公开(公告)日：2009-06-09

申请号：US11486456

申请日：2006-07-13

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/20

CPC classification number: H01L27/14683 ,  H01L27/14603

Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.

Abstract translation: 公开了CMOS图像传感器及其制造方法。 该方法包括以下步骤：在半导体衬底上形成隔离层，限定包括光电二极管区域和晶体管区域的有源区域; 在所述晶体管区域中形成栅极，所述栅极包括栅极电极和栅极绝缘层; 在所述光电二极管区域中形成第一低浓度扩散区域; 在所述晶体管区域中形成第二低浓度扩散区域; 在所述衬底上形成缓冲层，所述缓冲层覆盖所述光电二极管区域; 在衬底的整个表面上形成第一和第二绝缘层，第一和第二绝缘层彼此具有不同的蚀刻选择性; 通过选择性地去除所述第二绝缘层在所述栅电极的侧面上形成绝缘侧壁; 从晶体管区域去除第一绝缘层; 在所述暴露的晶体管区域中形成高浓度扩散区域，部分地与所述第二低浓度扩散区域重叠; 在高浓度扩散区上形成金属硅化物层。

公开(公告)号：US20080203451A1

公开(公告)日：2008-08-28

申请号：US12007900

申请日：2008-01-16

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687

Abstract: A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.

Abstract translation: 提供一种CMOS图像传感器及其制造方法，其中防止了光电二极管的N型区域与器件隔离膜相邻并且暗电流减小。 CMOS图像传感器包括形成在栅极聚合物和电源线之间的层间电介质膜，形成在层间电介质膜中的接触体和与接触连接并仅形成在蓝色光电二极管区域中的外延层。

公开(公告)号：US07405097B2

公开(公告)日：2008-07-29

申请号：US11319586

申请日：2005-12-29

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00

CPC classification number: H01L27/14689 ,  H01L27/14643

Abstract: A CMOS image sensor and a method for manufacturing the same are disclosed, in which a blue photodiode is imparted with a greater thickness to improve sensitivity of blue light. The blue photodiode of a CMOS image sensor includes a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate; a gate electrode of a transfer transistor formed on the first epitaxial layer; a first N-type blue photodiode region formed on the first epitaxial layer; and a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.

Abstract translation: 公开了一种CMOS图像传感器及其制造方法，其中蓝色光电二极管被赋予更大的厚度以提高蓝光的灵敏度。 CMOS图像传感器的蓝色光电二极管包括形成在重掺杂P型半导体衬底上的第一轻掺杂P型外延层; 形成在所述第一外延层上的转移晶体管的栅电极; 形成在第一外延层上的第一N型蓝色光电二极管区域; 以及形成在对应于第一蓝色光电二极管区域的第一外延层上的第二N型蓝色光电二极管区域。

公开(公告)号：US20080157141A1

公开(公告)日：2008-07-03

申请号：US11875419

申请日：2007-10-19

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/113 ,  H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14692 ,  H01L23/38 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/16 ,  H01L31/024 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a CMOS device including: sequentially forming a first silicon oxide film and a first polysilicon film on a lower substrate; performing an ion implantation process with respect to the first polysilicon film to form a plurality of lower conductors spaced apart from one another at a predetermined interval; forming a plurality of N-type semiconductor films and P-type semiconductor films which are formed by being spaced apart from one another at a predetermined interval and are in contact with the lower conductors; forming a plurality of upper conductors electrically connected to the N-type semiconductor films and P-type semiconductor films; forming an upper substrate on the upper conductors; forming a second polysilicon film on the upper substrate; forming a device isolation film and a photodiode in the second polysilicon film; forming a gate electrode including an insulating sidewall on the second polysilicon film; forming an insulating film on an epitaxial layer with the gate electrode; forming a color filter array on the insulating film; forming a planarization layer on the color filter array; and forming a microlens on the planarization layer.

Abstract translation: 一种制造CMOS器件的方法，包括：在下基板上依次形成第一氧化硅膜和第一多晶硅膜; 对所述第一多晶硅膜进行离子注入工艺以形成以预定间隔彼此间隔开的多个下导体; 形成多个N型半导体膜和P型半导体膜，它们以预定间隔彼此间隔开并与下导体接触; 形成电连接到N型半导体膜和P型半导体膜的多个上导体; 在上导体上形成上基板; 在上基板上形成第二多晶硅膜; 在所述第二多晶硅膜中形成器件隔离膜和光电二极管; 在所述第二多晶硅膜上形成包括绝缘侧壁的栅电极; 在栅电极的外延层上形成绝缘膜; 在绝缘膜上形成滤色器阵列; 在所述滤色器阵列上形成平坦化层; 并在平坦化层上形成微透镜。

公开(公告)号：US07344911B2

公开(公告)日：2008-03-18

申请号：US11319585

申请日：2005-12-29

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687

Abstract: A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.

公开(公告)号：US07135371B2

公开(公告)日：2006-11-14

申请号：US10747602

申请日：2003-12-29

Applicant: Chang Hun Han ,  Dong Yeal Keum

Inventor： Chang Hun Han ,  Dong Yeal Keum

IPC: H01L21/336

CPC classification number: H01L21/823475 ,  H01L21/76232 ,  H01L21/823481

Abstract: Methods of fabricating semiconductor devices are disclosed. One example method includes forming a gate oxide and a gate electrode on a semiconductor substrate; performing a first ion implantation process for the formation of an LDD (lightly doped drain) region in the substrate; forming spacers on the sidewalls of the gate electrode; performing a second ion implantation process for the formation of a junction region in the substrate using the spacers as mask; forming a trench for device isolation by removing selectively the top portion of the substrate between the spacers; forming a sidewall oxide layer on the resulting substrate; forming a diffusion barrier on the sidewall oxide layer; depositing a gap filling insulation layer over the diffusion barrier; planarizing the gap filling insulating layer; and removing selectively some part of the gap filling insulation layer to form contact holes.

Abstract translation: 公开了制造半导体器件的方法。 一种示例性方法包括在半导体衬底上形成栅极氧化物和栅电极; 执行用于在衬底中形成LDD（轻掺杂漏极）区域的第一离子注入工艺; 在栅电极的侧壁上形成间隔物; 执行第二离子注入工艺，以使用间隔物作为掩模在衬底中形成接合区域; 通过选择性地去除所述间隔物之间​​的所述衬底的顶部而形成用于器件隔离的沟槽; 在所得衬底上形成侧壁氧化物层; 在侧壁氧化物层上形成扩散阻挡层; 在扩散阻挡层上沉积间隙填充绝缘层; 平面化间隙填充绝缘层; 并且选择性地移除间隙填充绝缘层的一部分以形成接触孔。

公开(公告)号：US20130135785A1

公开(公告)日：2013-05-30

申请号：US13700613

申请日：2011-06-01

Applicant: Chang Wook Kim ,  Dong Chan Park ,  Ju Young Song ,  Sang Hun Lee ,  Sung Bae Cho ,  Hyun Ho Yang ,  Jun Bo Yoon ,  Dong Hun Choi ,  Chang Hun Han

Inventor： Chang Wook Kim ,  Dong Chan Park ,  Ju Young Song ,  Sang Hun Lee ,  Sung Bae Cho ,  Hyun Ho Yang ,  Jun Bo Yoon ,  Dong Hun Choi ,  Chang Hun Han

IPC: H01G7/00

CPC classification number: H01G7/00 ,  H01G5/16

Abstract: Disclosed is a MEMS variable capacitor, the capacitor including a first electrode, a second electrode that is floated on an upper surface of the first electrode, and a third electrode capable of variably-adjusting a capacitance value by adjusting a gap between the first electrode and the second electrode.

Abstract translation: 公开了一种MEMS可变电容器，电容器包括第一电极，漂浮在第一电极的上表面上的第二电极和能够通过调节第一电极和第二电极之间的间隙来可变地调整电容值的第三电极 第二电极。