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267 条记录 (耗时 0.032 秒)

    METHOD AND APPARATUS FOR DYNAMICALLY CONFIGURING A HYBRID AUTOMATIC REPEAT REQUEST MEMORY
    31.
    发明申请
    METHOD AND APPARATUS FOR DYNAMICALLY CONFIGURING A HYBRID AUTOMATIC REPEAT REQUEST MEMORY 有权
    用于动态配置混合自动重复请求存储器的方法和装置

    公开(公告)号：US20070189206A1

    公开(公告)日：2007-08-16

    申请号：US11670639

    申请日：2007-02-02

    申请人： Arty Chandra ,  Guodong Zhang ,  John Chen ,  Mohammed Sammour ,  Stephen Terry

    发明人： Arty Chandra ,  Guodong Zhang ,  John Chen ,  Mohammed Sammour ,  Stephen Terry

    IPC分类号： H04Q7/00

    CPC分类号： H04L1/1835 ,  H04L1/1812 ,  H04L1/1822 ,  H04L2001/0096

    摘要： A method and apparatus for dynamically configuring a memory for hybrid automatic repeat request (H-ARQ) processes in a receiving node to permit a more flexible H-ARQ memory configuration and improve the performance of H-ARQ processes. An H-ARQ memory in the receiving node is reserved for a plurality of H-ARQ processes. A transmitting node dynamically configures the H-ARQ memory in the receiving node for each H-ARQ transmission so that the memory requirement for a plurality of H-ARQ processes exceeds the H-ARQ memory capacity. If there is insufficient H-ARQ memory available to support H-ARQ transmissions, only a subset of the plurality of H-ARQ processes may be activated at a time. When there is insufficient H-ARQ memory for processing H-ARQ transmissions, a negative acknowledgement (NACK), an acknowledgement (ACK), nothing, and/or information indicating the reason for a failed transmission may be transmitted to a transmitting node.

    摘要翻译： 一种用于在接收节点中动态配置用于混合自动重传请求（H-ARQ）进程的存储器以允许更灵活的H-ARQ存储器配置并提高H-ARQ进程的性能的方法和装置。 接收节点中的H-ARQ存储器被保留用于多个H-ARQ进程。 发送节点为每个H-ARQ传输动态地配置接收节点中的H-ARQ存储器，使得多个H-ARQ过程的存储器需求超过H-ARQ存储器容量。 如果没有足够的H-ARQ存储器来支持H-ARQ传输，则可以一次仅激活多个H-ARQ过程的一个子集。 当用于处理H-ARQ传输的H-ARQ存储器不足时，可以向发送节点发送否定确认（NACK），确认（ACK），无和/或指示发送故障的原因的信息。

    Method and structure for second spacer formation for strained silicon MOS transistors
    32.
    发明申请
    Method and structure for second spacer formation for strained silicon MOS transistors 有权
    用于应变硅MOS晶体管的第二间隔物形成的方法和结构

    公开(公告)号：US20070077716A1

    公开(公告)日：2007-04-05

    申请号：US11243707

    申请日：2005-10-04

    申请人： John Chen ,  Xian Ning ,  Hanming Wu

    发明人： John Chen ,  Xian Ning ,  Hanming Wu

    IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/8234

    CPC分类号： H01L29/66545 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/66636 ,  H01L29/7848

    摘要： A method for forming a CMOS semiconductor wafer. The method includes providing a semiconductor substrate (e.g., silicon wafer) and forming a dielectric layer (e.g., silicon dioxide, silicon oxynitride) overlying the semiconductor substrate. The method includes forming a gate layer overlying the dielectric layer and patterning the gate layer to form a gate structure including edges. The method includes forming a dielectric layer overlying the gate structure to protect the gate structure including the edges. Preferably, the dielectric layer has a thickness of less than 40 nanometers. The method includes etching a source region and a drain region adjacent to the gate structure using the dielectric layer as a protective layer and depositing silicon germanium material into the source region and the drain region to fill the etched source region and the etched drain region. The method causes a channel region between the source region and the drain region to be strained in compressive mode from at least the silicon germanium material formed in the source region and the drain region. The method includes forming a second protective layer overlying surfaces and performing an anisotropic etching process to form spacer structures to seal the gate structure.

    摘要翻译： 一种用于形成CMOS半导体晶片的方法。 该方法包括提供半导体衬底（例如硅晶片）并形成覆盖半导体衬底的电介质层（例如，二氧化硅，氮氧化硅）。 该方法包括形成覆盖在介电层上的栅极层，并构图栅极层以形成包括边缘的栅极结构。 该方法包括形成覆盖栅极结构的电介质层，以保护包括边缘的栅极结构。 优选地，电介质层的厚度小于40纳米。 该方法包括使用电介质层作为保护层蚀刻与栅极结构相邻的源极区域和漏极区域，并将硅锗材料沉积到源极区域和漏极区域中以填充蚀刻的源极区域和蚀刻的漏极区域。 该方法使得源极区域和漏极区域之间的沟道区域至少在形成于源极区域和漏极区域中的硅锗材料以压缩模式应变。 该方法包括形成覆盖表面的第二保护层，并执行各向异性蚀刻工艺以形成间隔结构以密封栅极结构。

    Hammer handle
    35.
    外观设计
    Hammer handle 有权
    锤柄

    公开(公告)号：USD535539S1

    公开(公告)日：2007-01-23

    申请号：US29261379

    申请日：2006-06-13

    申请人： John Chen

    设计人： John Chen

    LAN magnetic interface circuit
    36.
    发明授权
    LAN magnetic interface circuit 有权
    LAN磁接口电路

    公开(公告)号：US07123117B2

    公开(公告)日：2006-10-17

    申请号：US10851618

    申请日：2004-05-21

    申请人： John Chen ,  Steve Contreras

    发明人： John Chen ,  Steve Contreras

    IPC分类号： H03H7/00

    CPC分类号： H01F19/08 ,  H01F17/00 ,  H01F17/06 ,  H01F38/023 ,  H01F2019/085 ,  H01F2038/143 ,  H03H7/38

    摘要： A magnetic interface circuit for a LAN, such as an Ethernet network, includes a transformer having a first winding connected to the line side of the LAN and a second winding connected to the circuit side of the LAN. Each of the first and second windings has two output ports and one of the windings has a center tap port A 3-wire common mode choke having a center winding and two outer windings, the center winding of a 3-wire common mode choke is connected to the center tap of the one winding and the outer windings of the 3-wire common mode choke are respectively connected to the output ports of the one winding.

    摘要翻译： 用于LAN的磁接口电路，例如以太网，包括具有连接到LAN的线路侧的第一绕组和连接到LAN的电路侧的第二绕组的变压器。 第一绕组和第二绕组中的每一个具有两个输出端口，并且一个绕组具有中心抽头端口，具有中心绕组和两个外部绕组的3线共模扼流圈，3线共模扼流圈的中心绕组被连接 到一个绕组的中心抽头和3线共模扼流圈的外绕组分别连接到一个绕组的输出端口。

    Hammer having enhanced strength
    39.
    发明授权
    Hammer having enhanced strength 失效
    锤子力量增强

    公开(公告)号：US07066052B2

    公开(公告)日：2006-06-27

    申请号：US10956655

    申请日：2004-10-01

    申请人： John Chen

    发明人： John Chen

    IPC分类号： B25D11/02

    CPC分类号： B25G3/34 ,  B25D1/12

    摘要： A hammer includes a handle, a hammer body mounted on an end of the handle and having a side formed with a combination bar inserted into the handle, and a protective jacket integrally formed on the handle to encompass a periphery of the combination bar and a mediate portion of the hammer body entirely. Thus, the protective jacket of the handle encompasses the periphery of the combination bar and the mediate portion of the hammer body entirely, so that the handle and the hammer body are combined with each other rigidly and stably, thereby enhancing the combination strength of the hammer.

    摘要翻译： 锤包括手柄，安装在手柄的端部上的锤体，并且具有形成有插入手柄中的组合杆的一侧，以及整体地形成在手柄上以包围组合杆的周边和中间体的保护套 部分锤体完全。 因此，手柄的保护护套整体包围组合杆的周边和锤体的中间部分，使得手柄和锤体彼此刚性和稳定地组合，从而提高锤的组合强度 。

    Parser for natural language processing
    40.
    发明申请
    Parser for natural language processing 有权
    解析器进行自然语言处理

    公开(公告)号：US20060095250A1

    公开(公告)日：2006-05-04

    申请号：US10980646

    申请日：2004-11-03

    申请人： John Chen ,  Ming Zhou ,  Tianlei Wu

    发明人： John Chen ,  Ming Zhou ,  Tianlei Wu

    IPC分类号： G06F17/27

    CPC分类号： G06F17/2705

    摘要： A computer-implemented method for developing a parser is provided. The method includes accessing a corpus of sentences and parsing the sentences to generate a structural description of each sentence. The parser is trained based on the structural description of each sentence.

    摘要翻译： 提供了一种用于开发解析器的计算机实现的方法。 该方法包括访问句子语料库并解析句子以生成每个句子的结构描述。 解析器基于每个句子的结构描述进行训练。