公开(公告)号：US08508988B2

公开(公告)日：2013-08-13

申请号：US13527845

申请日：2012-06-20

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

公开(公告)号：US08400867B2

公开(公告)日：2013-03-19

申请号：US13316972

申请日：2011-12-12

申请人： Dimitar Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

发明人： Dimitar Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

IPC分类号： G11C8/00

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

摘要： A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

摘要翻译： 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

公开(公告)号：US08289756B2

公开(公告)日：2012-10-16

申请号：US12502213

申请日：2009-07-13

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.

摘要翻译： 一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。

公开(公告)号：US08288254B2

公开(公告)日：2012-10-16

申请号：US13368851

申请日：2012-02-08

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

公开(公告)号：US08213222B2

公开(公告)日：2012-07-03

申请号：US13210436

申请日：2011-08-16

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

公开(公告)号：US20120142169A1

公开(公告)日：2012-06-07

申请号：US13368851

申请日：2012-02-08

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。

公开(公告)号：US20120081951A1

公开(公告)日：2012-04-05

申请号：US13316972

申请日：2011-12-12

申请人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

发明人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

IPC分类号： G11C11/00

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

摘要： A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

摘要翻译： 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

公开(公告)号：US20110254113A1

公开(公告)日：2011-10-20

申请号：US13169449

申请日：2011-06-27

申请人： Dexin Wang ,  Dimitar V. Dimitrov ,  Song S. Xue ,  Insik Jin

发明人： Dexin Wang ,  Dimitar V. Dimitrov ,  Song S. Xue ,  Insik Jin

IPC分类号： H01L29/82

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286

摘要： In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically reflective surface, and a permanent magnet layer, which has perpendicular anisotropy to bias the free magnetic layer.

摘要翻译： 为了提高自旋转移的效率，从而降低所需的开关电流，与存储器件的平面（CPP）磁性元件垂直的电流包括具有电子反射表面的自由磁性层中的一个或两个，以及 永磁体层具有垂直各向异性以偏置自由磁性层。

公开(公告)号：US07909417B2

公开(公告)日：2011-03-22

申请号：US11565879

申请日：2006-12-01

申请人： Dexin Wang ,  Rena Basch ,  Yitzong Chern

发明人： Dexin Wang ,  Rena Basch ,  Yitzong Chern

IPC分类号： B60T8/32

CPC分类号： B60T8/1755 ,  B60T2210/14

摘要： A braking control system and method for a vehicle improves vehicle stability and steerability. When a braking torque is being applied and a road disturbance is detected, the braking torque may be reduced as the vehicle traverses the road disturbance. Subsequently, when the road disturbance has been traversed, the braking control system may allow the application of braking torque as requested by a braking device. The reduction in braking torque when traversing road disturbances minimizes the physical impact experienced by the vehicle wheels.

摘要翻译： 车辆的制动控制系统和方法提高了车辆的稳定性和操纵性。 当施加制动转矩并且检测到道路干扰时，随着车辆横穿道路干扰，可以减小制动转矩。 随后，当道路干扰已经行进时，制动控制系统可允许施加制动装置所要求的制动转矩。 行驶道路扰动时制动力矩的减小可最大限度地减少车辆车轮的物理冲击。

公开(公告)号：US20100268422A1

公开(公告)日：2010-10-21

申请号：US12426463

申请日：2009-04-20

申请人： Michael Alan Blommer ,  Paul George Sanders ,  Hongtei Eric Tseng ,  Dexin Wang

发明人： Michael Alan Blommer ,  Paul George Sanders ,  Hongtei Eric Tseng ,  Dexin Wang

IPC分类号： B62D6/00

CPC分类号： B62D5/0472 ,  B62D6/008

摘要： A system for decoupling steering rack force disturbances in electric steering may comprise a steering wheel angle sensor, a yaw rate sensor, a lateral acceleration sensor, and a steering torque sensor. The system may also comprise a tire force generator configured to receive signals from the steering wheel angle sensor, the yaw rate sensor, and the lateral acceleration sensor and send a reference rack force to a controller. The system may further comprise a rack force observer configured to receive signals from the steering torque sensor and send an estimated rack force to the controller, wherein the controller is configured to receive signals from the tire force generator and the rack force observer, compare the estimated rack force with the reference rack force to determine a rack force disturbance, and adjust an auxiliary torque based on the rack force disturbance.

摘要翻译： 用于解耦电动转向中的转向齿条力干扰的系统可以包括方向盘角度传感器，偏航角速度传感器，横向加速度传感器和转向扭矩传感器。 该系统还可以包括轮胎力发生器，其被配置为从方向盘角度传感器，横摆率传感器和横向加速度传感器接收信号，并向控制器发送参考齿条力。 系统还可以包括齿轮力观察器，其被配置为从转向扭矩传感器接收信号并向控制器发送估计的齿条力，其中控制器被配置为从轮胎力发生器和齿条力观察器接收信号， 齿条力与参考齿条力确定齿条力的干扰，并根据齿条力的扰动调整辅助扭矩。