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31.发明申请ETCHING SOLUTION AND ETCHING SOLUTION KIT, ETCHING METHOD USING SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT 审中-公开蚀刻溶液和蚀刻溶液套件，使用其的蚀刻方法以及半导体衬底产品的生产方法公开(公告)号：US20160053386A1
公开(公告)日：2016-02-25
申请号：US14928824
申请日：2015-10-30
Applicant: FUJIFILM Corporation
Inventor： Atsushi MIZUTANI , Tetsuya KAMIMURA , Satomi TAKAHASHI , Akiko KOYAMA
IPC: C23F1/30 , H01L21/465
Abstract: There is provided an etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solution selectively removing the second layer and including following specific acid compoundSpecific acid compound: sulfuric acid (H2SO4), nitric acid (HNO3), phosphoric acid (H3PO4), phosphonic acid (H3PO3), or organic acid
Abstract translation: 提供了包括含有锗（Ge）的第一层和含有除锗（Ge）之外的特定金属元素的第二层的半导体衬底的蚀刻溶液，所述蚀刻溶液选择性地除去第二层并包括以下特定酸化合物 特定酸化合物：硫酸（H 2 SO 4），硝酸（HNO 3），磷酸（H 3 PO 4），膦酸（H 3 PO 3）或有机酸
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32.发明申请ETCHING METHOD, ETCHING SOLUTION USED IN SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT 审中-公开蚀刻方法，使用其中的蚀刻方法和半导体基板产品的生产方法公开(公告)号：US20160053385A1
公开(公告)日：2016-02-25
申请号：US14927697
申请日：2015-10-30
Applicant: FUJIFILM CORPORATION
Inventor： Naotsugu MURO , Tetsuya KAMIMURA , Satomi TAKAHASHI , Akiko KOYAMA , Atsushi MIZUTANI
IPC: C23F1/30 , H01L21/3213 , H01L29/417
Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains a non-halogen acidic compound into contact with the second layer and selectively removing the second layer.
Abstract translation: 提供了一种半导体衬底的蚀刻方法，其包括含有锗（Ge）的第一层和包含选自镍铂（NiPt），钛（Ti），镍（Ni））和至少一种特定金属元素的第二层 钴（Co），该方法包括：使包含非卤素酸性化合物的蚀刻溶液与第二层接触并选择性地除去第二层。
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