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    PRE-WET LIQUID, RESIST FILM FORMING METHOD, PATTERN FORMING METHOD, AND KIT
    1.
    发明申请
    PRE-WET LIQUID, RESIST FILM FORMING METHOD, PATTERN FORMING METHOD, AND KIT 有权

    公开(公告)号：US20220197137A1

    公开(公告)日：2022-06-23

    申请号：US17693405

    申请日：2022-03-13

    Applicant: FUJIFILM Corporation

    Inventor： Satomi TAKAHASHI

    IPC: G03F7/00 ,  G03F7/20 ,  G03F7/40 ,  G03F7/32

    Abstract: The present invention provides a pre-wet liquid having excellent resist-saving properties. In addition, a resist film forming method, a pattern forming method, and a kit, which are related to the pre-wet liquid, are also provided.
    The pre-wet liquid according to the embodiment of the present invention has a surface tension of 29.0 mN/m or more, a viscosity of 1.8 cP or less, and a vapor pressure of 2.5 to 5.0 mmHg, in a case of consisting of a single solvent, the pre-wet liquid has an SP value of 25.0 MPa1/2 or less and does not have a benzene ring group, and in a case of consisting of a mixed solvent, the pre-wet liquid satisfies the requirement 1 or the requirement 2.
    requirement 1: The mixed solvent is a mixed solvent consisting of only two or more kinds of organic solvents A, and the organic solvent A has an SP value of 25.0 MPa1/2 or less and a surface tension of 29.0 mN/m or more and does not have a benzene ring group.
    requirement 2: The mixed solvent is a mixed solvent of an organic solvent A and an organic solvent B, and the organic solvent B has an SP value of 25.0 MPa1/2 or less and a surface tension of less than 29.0 mN/m.

    CHEMICAL LIQUID AND PATTERN FORMING METHOD
    3.
    发明公开
    CHEMICAL LIQUID AND PATTERN FORMING METHOD 审中-公开

    公开(公告)号：US20240231236A1

    公开(公告)日：2024-07-11

    申请号：US18585441

    申请日：2024-02-23

    Applicant: FUJIFILM Corporation

    Inventor： Satomi TAKAHASHI ,  Tetsuya Shimizu ,  Michihiro Shirakawa

    IPC: G03F7/32

    CPC classification number: G03F7/325

    Abstract: The present invention provides a chemical liquid that provides a pattern with good resolution and that also has a good ability to suppress the occurrence of defects when the pattern is formed using the chemical liquid as a developer or a rinsing liquid. The chemical liquid according to the present invention is a chemical liquid including an aromatic hydrocarbon, an organic solvent other than the aromatic hydrocarbon, and metal X. The aromatic hydrocarbon is composed only of hydrogen atoms and carbon atoms. A content of the aromatic hydrocarbon is 1 mass % or less relative to a total mass of the chemical liquid. The organic solvent includes an aliphatic hydrocarbon. The metal X is at least one metal selected from the group consisting of Al, Fe, and Ni. A mass ratio of the content of the aromatic hydrocarbon to a content of the metal X is 5.0×104 to 2.0×1010.

    PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE
    4.
    发明公开
    PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240219831A1

    公开(公告)日：2024-07-04

    申请号：US18411364

    申请日：2024-01-12

    Applicant: FUJIFILM Corporation

    Inventor： Kazuhiro MARUMO ,  Satomi TAKAHASHI ,  Yohei ISHIJI ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

    IPC: G03F7/004 ,  G03F7/00

    CPC classification number: G03F7/0048 ,  G03F7/0045 ,  G03F7/70033

    Abstract: The present invention provides a pattern forming method that enables the formation of a pattern excellent in resolution and evenness and a method for producing an electronic device. The pattern forming method according to the present invention includes a resist film-forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition that undergoes an increase in the degree of solubility in an organic solvent due to action of exposure, acid, base, or heating, an exposure step of exposing the resist film, and a developing step of developing the exposed resist film with a developer including an organic solvent. The organic solvent includes an ester-based solvent having 6 or less carbon atoms and a hydrocarbon-based solvent.

    MEMBER, CONTAINER, CHEMICAL LIQUID STORAGE BODY, REACTOR, DISTILLATION COLUMN, FILTER UNIT, STORAGE TANK, PIPE LINE, AND CHEMICAL LIQUID MANUFACTURING METHOD
    5.
    发明申请
    MEMBER, CONTAINER, CHEMICAL LIQUID STORAGE BODY, REACTOR, DISTILLATION COLUMN, FILTER UNIT, STORAGE TANK, PIPE LINE, AND CHEMICAL LIQUID MANUFACTURING METHOD 有权

    公开(公告)号：US20210130084A1

    公开(公告)日：2021-05-06

    申请号：US17141335

    申请日：2021-01-05

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya SHIMIZU ,  Tetsuya KAMIMURA ,  Satomi TAKAHASHI ,  Tadashi OOMATSU

    IPC: B65D85/84 ,  B01D3/00 ,  B01D39/20 ,  B65D25/14 ,  C25F3/24 ,  C11D7/50

    Abstract: The present invention provides a member which makes is possible to obtain excellent residue defect inhibition properties and excellent bridge defect inhibition properties of a chemical liquid in a case where the member is brought into contact with the chemical liquid. The present invention also provides a container, a chemical liquid storage body, a reactor, a distillation column, a filter unit, a storage tank, a pipe line, and a chemical liquid manufacturing method. The member according to an embodiment of the present invention is a member that will be brought into contact with a chemical liquid. A surface of the member is constituted with stainless steel containing chromium atoms and iron atoms. In a case where an atomic ratio of the chromium atoms to the iron atoms is measured from the surface of the member to a position 10 nm below the surface in a depth direction, a maximum value of the atomic ratio is found in a region extending 3 nm from the surface of the member in the depth direction. The maximum value is 0.5 to 3.0, and an average surface roughness of the surface of the member is equal to or lower than 10 nm.

    PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE
    8.
    发明申请
    PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE 有权

    公开(公告)号：US20250044700A1

    公开(公告)日：2025-02-06

    申请号：US18925335

    申请日：2024-10-24

    Applicant: FUJIFILM Corporation

    Inventor： Michihiro SHIRAKAWA ,  Satomi TAKAHASHI

    IPC: G03F7/32 ,  G03F7/038

    Abstract: An object of the present invention is to provide a pattern forming method with which a pattern excellent in terms of critical resolution and the in-plane evenness of resolution may be formed. Another object of the present invention is to provide a method for producing an electronic device in which the pattern forming method is used.
    A pattern forming method according to the present invention is a pattern forming method including a step 1 of forming a resist film on a substrate with an actinic ray- or radiation-sensitive resin composition including a resin X, a molecular weight of the resin X reducing as a result of a backbone of the resin X being broken by an action of exposure, an acid, or a base, a step 2 of exposing the resist film to light, and a step 3 of developing the resist film with a developer including an organic solvent to remove an exposed portion to form a pattern. The pattern forming method may further include a step 4 of cleaning the pattern using a rinse liquid including an organic solvent subsequent to the step 3. In the case where the pattern forming method does not include the step 4 subsequent to the step 3, the developer is a chemical solution including two or more types of organic solvents. In the case where the pattern forming method includes the step 4 subsequent to the step 3, at least one of the developer or the rinse liquid is a chemical solution including two or more types of organic solvents. The chemical solution including two or more types of organic solvents includes at least an organic solvent having a boiling point of 100° C. or more.

    METHOD FOR TESTING PHOTOSENSITIVE COMPOSITION AND METHOD FOR PRODUCING PHOTOSENSITIVE COMPOSITION
    9.
    发明公开
    METHOD FOR TESTING PHOTOSENSITIVE COMPOSITION AND METHOD FOR PRODUCING PHOTOSENSITIVE COMPOSITION 审中-公开

    公开(公告)号：US20240280362A1

    公开(公告)日：2024-08-22

    申请号：US18610609

    申请日：2024-03-20

    Applicant: FUJIFILM Corporation

    Inventor： Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO ,  Satomi TAKAHASHI

    IPC: G01B21/10 ,  G03F7/004 ,  G03F7/32

    CPC classification number: G01B21/10 ,  G03F7/0045 ,  G03F7/325

    Abstract: The present invention provides a method for testing a photosensitive composition and a method for producing a photosensitive composition that can easily test whether or not the photosensitive composition exhibits a predetermined LWR. The method for testing a photosensitive composition has a step 1 of using a reference photosensitive composition including an acid decomposable resin having a group that is decomposed by an action of an acid to generate a polar group and a photoacid generator, to form a resist film on a substrate, exposing the resist film, using a developer to perform a development treatment to form a resist pattern, and obtaining any one reference data selected from the group consisting of a line width or a space width of a line-shaped resist pattern, an opening diameter of an opening portion in the resist pattern, and a dot diameter of a dot-like resist pattern; a step 2 of using a photosensitive composition for measurement including components of the same types as types of components included in the reference photosensitive composition, to form a resist film on a substrate, exposing the resist film, using a developer to perform a development treatment to form a resist pattern, and obtaining measurement data of the resist pattern; and a step 3 of performing comparison between the reference data and the measurement data to determine whether or not an allowable range is satisfied, wherein the developer is an organic solvent-based developer including an aliphatic hydrocarbon solvent, an aromatic hydrocarbon, and at least one metal atom selected from the group consisting of Al, Fe, and Ni, and a mass ratio of a content of the aromatic hydrocarbon to a content of the metal atom in the developer is 5.0×104 to 2.0×1010.

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