公开(公告)号：US20070004169A1

公开(公告)日：2007-01-04

申请号：US11105574

申请日：2005-04-14

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/76

CPC分类号： H01L21/76254

摘要： This method for manufacturing a semiconductor substrate is characterized in that the method includes: a step of ion-implanting light element to a predetermined depth position in a single-crystal wafer of which a surface is a cleavage plane; and a step of heat-treating the single-crystal wafer so as to form light-element bubbles along a cleavage plane parallel to the surface of the single-crystal wafer within an ion-implanted region and thereby splitting off a portion of the single-crystal wafer on an ion-implanted side.

摘要翻译： 该半导体衬底的制造方法的特征在于，该方法包括：将光源离子注入到表面为解理面的单晶晶片中的规定深度位置的工序; 以及在离子注入区域内沿着与单晶晶片的表面平行的解理面形成发光元件气泡的单晶晶片的热处理工序，由此分离出单晶晶片的一部分， 离子注入侧的晶体晶片。

公开(公告)号：US07902043B2

公开(公告)日：2011-03-08

申请号：US11855959

申请日：2007-09-14

申请人： Nobuyuki Morimoto ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method of producing a bonded wafer, comprising: performing bonding of a first semiconductor wafer and a second semiconductor wafer without interposing an insulation film in between; and performing thinning of the second semiconductor wafer, wherein surface portions at least including bonded surfaces of the first semiconductor wafer and the second semiconductor wafer have an oxygen concentration of 1.0×1018 atoms/cm3 (Old ASTM) or less.

摘要翻译： 一种制造接合晶片的方法，其特征在于，包括：在不在其间插入绝缘膜的情况下进行第一半导体晶片和第二半导体晶片的接合; 以及执行所述第二半导体晶片的薄化，其中至少包括所述第一半导体晶片和所述第二半导体晶片的键合表面的表面部分的氧浓度为1.0×1018原子/ cm3（旧ASTM）或更低。

公开(公告)号：US07855132B2

公开(公告)日：2010-12-21

申请号：US12057896

申请日：2008-03-28

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/425

CPC分类号： H01L21/76243 ,  H01L21/76251

摘要： The present invention provides a method of manufacturing a bonded wafer. The method includes forming an oxygen ion implantation layer in an active layer wafer having a substrate resistivity of 1 to 100 mΩcm by implanting oxygen ions in the active layer wafer, bonding a base wafer and the active layer wafer directly or through an insulating layer to form a bonded wafer, heat treating the bonded wafer to strengthen the bond and convert the oxygen ion implantation layer into a stop layer, grinding, polishing, and/or etching, from the active layer wafer surface side, the bonded wafer in which the bond has been strengthened to expose the stop layer on a surface of the bonded wafer, removing the stop layer, and subjecting the bonded wafer from which the stop layer has been removed to a heat treatment under a reducing atmosphere to diffuse an electrically conductive component comprised in the active layer wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括通过在有源层晶片中注入氧离子，在基片电阻率为1〜100mΩ/ cm 2的有源层晶片中形成氧离子注入层，将基底晶片和有源层晶片直接或通过绝缘层 形成接合晶片，对接合的晶片进行加热处理，以加强结合，并将氧离子注入层转换成活性层晶片表面侧的停止层，研磨，抛光和/或蚀刻， 已经加强了接合以使接合晶片的表面上的停止层露出，去除停止层，并且在还原气氛下对已经去除了停止层的接合晶片进行热处理以扩散包含的导电组分 在有源层晶片中。

公开(公告)号：US20100015779A1

公开(公告)日：2010-01-21

申请号：US12064605

申请日：2007-07-04

申请人： Nobuyuki Morimoto ,  Akihiko Endo ,  Etsurou Morita

发明人： Nobuyuki Morimoto ,  Akihiko Endo ,  Etsurou Morita

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/30625

摘要： There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects.In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate and thinning the wafer for active layer, oxygen ions are implanted into the wafer for active layer to form an oxygen ion implanted layer in the active layer and thereafter a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not lower than 1100° C., and an oxide film formed on the exposed surface of the oxygen ion implanted layer is removed and then a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not higher than 1100° C.

摘要翻译： 提供了在变薄后具有优异的厚度均匀性但具有良好的表面粗糙度并且缺陷较少的接合晶片。 在通过将有源层用晶片与用于支撑基板的晶片接合并使用于有源层的晶片变薄的接合晶片的制造方法中，将氧离子注入到有源层用晶片中，在活性层中形成氧离子注入层 然后在非氧化性气氛中在不低于1100℃的温度下进行热处理，除去形成在氧离子注入层的暴露表面上的氧化膜，然后进行热处理 在不高于1100℃的温度下在非氧化性气氛中。

公开(公告)号：US07446016B2

公开(公告)日：2008-11-04

申请号：US10570663

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9×1018 atoms/cm3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed at a high rate. Consequently, there can be obtained a Smart-Cut wafer with high throughput. Furthermore, damages to the active layer due to the ion implantation can be reduced, thereby improving the quality of the active layer.

摘要翻译： 通过向活性层（10）的晶片添加超过9×10 18原子/ cm 3的硼，得到具有无结晶缺陷的有源层的键合SOI衬底 ）。 由于用于有源层的晶片中的硼浓度高，因此以高速率形成氧化硅膜。 因此，可以获得具有高生产能力的Smart-Cut晶片。 此外，可以减少由于离子注入引起的对活性层的损伤，从而提高有源层的质量。

公开(公告)号：US20080070377A1

公开(公告)日：2008-03-20

申请号：US11855959

申请日：2007-09-14

申请人： Nobuyuki Morimoto ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： A method of producing a bonded wafer, comprising: performing bonding of a first semiconductor wafer and a second semiconductor wafer without interposing an insulation film in between; and performing thinning of the second semiconductor wafer, wherein surface portions at least including bonded surfaces of the first semiconductor wafer and the second semiconductor wafer have an oxygen concentration of 1.0×1018 atoms/cm3 (Old ASTM or less.

摘要翻译： 一种制造接合晶片的方法，其特征在于，包括：在不在其间插入绝缘膜的情况下进行第一半导体晶片和第二半导体晶片的接合; 以及执行第二半导体晶片的薄化，其中至少包括第一半导体晶片和第二半导体晶片的键合表面的表面部分的氧浓度为1.0×10 18原子/ cm 3， / SUP>（旧ASTM或更低。

公开(公告)号：US20060281280A1

公开(公告)日：2006-12-14

申请号：US10570663

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9×1018 atoms/cm3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed at a high rate. Consequently, there can be obtained a Smart-Cut wafer with high throughput. Furthermore, damages to the active layer due to the ion implantation can be reduced, thereby improving the quality of the active layer.

摘要翻译： 通过向活性层（10）的晶片添加超过9×10 18原子/ cm 3的硼，得到具有无结晶缺陷的有源层的键合SOI衬底 ）。 由于用于有源层的晶片中的硼浓度高，因此以高速率形成氧化硅膜。 因此，可以获得具有高生产能力的Smart-Cut晶片。 此外，可以减少由于离子注入引起的对活性层的损伤，从而提高有源层的质量。

公开(公告)号：US08802540B2

公开(公告)日：2014-08-12

申请号：US11955765

申请日：2007-12-13

申请人： Nobuyuki Morimoto ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/02052 ,  H01L21/2007 ,  H01L21/76256

摘要： The present invention provides a method of manufacturing a bonded wafer. The method includes ozone washing two silicon wafers to form an oxide film equal to or less than 2.2 nm in thickness on each surface of the two silicon wafers, and bonding the two silicon wafers through the oxide films formed to obtain a bonded wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括臭氧洗涤两个硅晶片以在两个硅晶片的每个表面上形成厚度等于或小于2.2nm的氧化物膜，并且通过形成的氧化膜将两个硅晶片接合以获得接合晶片。

公开(公告)号：US08048769B2

公开(公告)日：2011-11-01

申请号：US12064605

申请日：2007-07-04

申请人： Nobuyuki Morimoto ,  Akihiko Endo ,  Etsurou Morita

发明人： Nobuyuki Morimoto ,  Akihiko Endo ,  Etsurou Morita

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/30625

摘要： There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects.In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate and thinning the wafer for active layer, oxygen ions are implanted into the wafer for active layer to form an oxygen ion implanted layer in the active layer and thereafter a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not lower than 1100° C., and an oxide film formed on the exposed surface of the oxygen ion implanted layer is removed and then a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not higher than 1100° C.

摘要翻译： 提供了在变薄后具有优异的厚度均匀性但具有良好的表面粗糙度并且缺陷较少的接合晶片。 在通过将有源层用晶片与用于支撑基板的晶片接合并使用于有源层的晶片变薄的接合晶片的制造方法中，将氧离子注入到有源层用晶片中，在活性层中形成氧离子注入层 然后在非氧化性气氛中在不低于1100℃的温度下进行热处理，除去形成在氧离子注入层的暴露表面上的氧化膜，然后进行热处理 在不高于1100℃的温度下在非氧化性气氛中。

公开(公告)号：US08048767B2

公开(公告)日：2011-11-01

申请号：US11849058

申请日：2007-08-31

申请人： Nobuyuki Morimoto ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/187

摘要： A bonded wafer is produced by directly bonding a silicon wafer for active layer and a silicon wafer for support substrate without an insulating film and thinning the silicon wafer for active layer to a given thickness, in which a silicon wafer cut out from an ingot at a cutting angle of 0-0.1° (compound angle) with respect to a predetermined crystal face is used in each of the silicon wafer for active layer and silicon wafer for support substrate.

摘要翻译： 通过直接接合用于有源层的硅晶片和用于支撑衬底的硅晶片而不具有绝缘膜并且将活性层的硅晶片减薄到给定的厚度来制造键合晶片，其中在晶片上切割出硅晶片 在用于有源层的硅晶片和用于支撑衬底的硅晶片中的每一个中使用相对于预定晶面的0-0.1°（复合角度）的切割角度。