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公开(公告)号：US20080026548A1
公开(公告)日：2008-01-31
申请号：US11547724
申请日：2005-03-29
CPC分类号： C23C14/0078 , C23C14/083 , C23C14/10 , C23C14/16 , C23C14/5833 , G02B5/28 , H01J37/34 , H01J2237/08
摘要： An optical film having a thin film stacked and optical characteristics close to design values is provided. In a vacuum chamber (2), a rotating drum (3) holding a substrate (4), an Si target (22) for forming a metal film on a film forming plane of the substrate (4), a Ta target (23), and an ECR reaction chamber (30) for reacting the metal film to a reaction gas by plasma, are provided. A film forming apparatus (51) is provided with an ion gun (11) for accelerating reaction of the film formed on the film forming plane by irradiating the film forming plane with ion beams, and the metal film formation, the gas reaction and the reaction acceleration by using ion beams are repeatedly performed.
摘要翻译： 提供了具有层叠薄膜的光学膜和接近设计值的光学特性。 在真空室（2）中，保持基板（4）的旋转滚筒（3），用于在基板（4）的成膜面上形成金属膜的Si靶（22），Ta靶（23） 和用于通过等离子体使金属膜与反应气体反应的ECR反应室（30）。 成膜装置（51）具有离子枪（11），用于通过用离子束照射成膜面来加速形成在成膜面上的膜的反应，并且金属膜形成，气体反应和反应 反复进行使用离子束的加速。
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32.发明授权
公开(公告)号：US5840374A
公开(公告)日：1998-11-24
申请号：US661500
申请日：1996-06-11
申请人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
发明人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
CPC分类号： C23C16/401
摘要： An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.
摘要翻译： 通过等离子体化学气相沉积（CVD）工艺在由塑料材料制成的衬底的表面上形成SiO 2钝化膜，其中使用有机氧化硅作为原料气体。 代替具有灰化效应的反应气体，使用Ar，He或NH 3作为反应气体，其用作在不高于基底热变形的温度（即，约 250℃）。 因此防止了氧或氢自由基对衬底的灰化。
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公开(公告)号：US5288329A
公开(公告)日：1994-02-22
申请号：US616106
申请日：1990-11-20
申请人： Kyuzo Nakamura , Michio Ishikawa , Kazuyuki Ito , Noriaki Tani , Masanori Hashimoto , Yoshifumi Ota
发明人： Kyuzo Nakamura , Michio Ishikawa , Kazuyuki Ito , Noriaki Tani , Masanori Hashimoto , Yoshifumi Ota
IPC分类号： C23C16/44 , C23C16/02 , C23C16/50 , C23C16/54 , C23F4/00 , H01L21/205 , H01L21/31 , H01L21/00
CPC分类号： C23C16/54 , C23C16/0245
摘要： An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.
摘要翻译： 一种在线型化学气相沉积装置，具有用于清洁至少基板保持件的蚀刻装置，该蚀刻装置设置在基板卸载站的下游，其中处理的基板在大气压力下从基板保持器移除。 蚀刻装置包括等离子体蚀刻装置，其中衬底保持器位于阳极侧或干蚀刻装置，其中衬底保持器位于阴极侧，从而减少装置的停机时间而不受任何影响 附着膜从基板保持器或其他部分剥离。
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公开(公告)号：US5198309A
公开(公告)日：1993-03-30
申请号：US89022
申请日：1987-08-24
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani
CPC分类号： G11B5/70621 , G11B5/64 , Y10S428/90 , Y10S428/928 , Y10T428/12847 , Y10T428/12854 , Y10T428/12861
摘要： An improved magnetic recording member comprising a magnetic metallic film having the composition Co.sub.x Cr.sub.y Ni.sub.z wherein x, y, and z are atomic ratios and 0.45.ltoreq.x
摘要翻译： 一种改进的磁记录元件，包括具有组成CoxCryNiz的磁性金属膜，其中x，y和z是原子比，0.45
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