公开(公告)号：US20090166641A1

公开(公告)日：2009-07-02

申请号：US12318244

申请日：2008-12-23

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Hyung-Jun Kim ,  Seong-Joon Lim

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Hyung-Jun Kim ,  Seong-Joon Lim

IPC分类号： H01L29/786 ,  H01L21/84 ,  H01L21/336 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014 atom/cm3 to about 1×1017 atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.

摘要翻译： 薄膜晶体管（TFT）包括衬底，衬底上的透明半导体层，包含氧化锌的透明半导体层，其电荷浓度为约1×10 14原子/ cm 3至约1×10 17原子/ cm 3，衬底上的栅电极 栅电极和透明半导体层之间的栅极绝缘层，栅极电极与透明半导体层绝缘的栅极绝缘层以及衬底上的源极和漏极，源极和漏极与透明半导体接触 层。

公开(公告)号：US20070138941A1

公开(公告)日：2007-06-21

申请号：US11604285

申请日：2006-11-27

申请人： Dong-Un Jin ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Dong-Un Jin ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H05B33/00 ,  H01L51/50

CPC分类号： H01L27/3244 ,  G02F2201/44 ,  H01L27/3232 ,  H01L2251/5323

摘要： An organic light emitting display (OLED), which includes a display unit and a controlling unit, is provided. The display unit includes an organic light emission layer and a transparent thin film transistor (TFT) to drive the organic light emission layer, and the display unit emits light into two opposite surfaces (upper and lower surfaces). The controlling unit includes an electro-optical layer that is capable of being switched from one state to another state by applying voltage to the layer. The controlling unit controls transmission of light emitted from the display unit. Therefore the flat panel display of the present invention is capable of displaying an image in one surface or in two surfaces. The selection of surface of image display can be manually or automatically controlled by a user. The controlling unit can includes a liquid crystal device, an electrophoretic device, or an electrochromic device.

摘要翻译： 提供了包括显示单元和控制单元的有机发光显示器（OLED）。 显示单元包括有机发光层和用于驱动有机发光层的透明薄膜晶体管（TFT），并且显示单元将光发射到两个相对的表面（上表面和下表面）中。 控制单元包括能够通过向层施加电压而从一种状态切换到另一种状态的电光层。 控制单元控制从显示单元发射的光的透射。 因此，本发明的平板显示器能够在一个表面或两个表面中显示图像。 图像显示的表面选择可以由用户手动或自动控制。 控制单元可以包括液晶装置，电泳装置或电致变色装置。

公开(公告)号：US20070069209A1

公开(公告)日：2007-03-29

申请号：US11527330

申请日：2006-09-27

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L31/00

CPC分类号： H01L29/78681 ,  H01L29/78621 ,  H01L29/7869

摘要： A transparent thin film transistor (TFT) and a method of fabricating the same are provided. The transparent TFT includes transparent source and drain electrodes formed of transparent material, a transparent semiconductor activation layer that contacts the source and drain electrodes, that is formed of transparent semiconductor, and in which source and drain regions are formed, and a doping section provided between the transparent source and drain electrodes and the transparent activation layer to have the same doping type as that of the source and drain regions and to have doping concentration different from that of the source and drain regions. At this time, doping during the formation of the doping section is performed by an in-situ method in which a gas containing impurities is sprayed in the same apparatus as the apparatus used for the previous step. Therefore, it is possible to reduce high contact resistance generated when the transparent semiconductor activation layer contacts the transparent electrodes and to thus form ohmic contact.

摘要翻译： 提供一种透明薄膜晶体管（TFT）及其制造方法。 透明TFT包括由透明材料形成的透明源极和漏极电极，与透明半导体形成的源极和漏极接触的透明半导体激活层，其中形成源极和漏极区域，以及掺杂部分设置在 透明源极和漏极以及透明激活层具有与源极和漏极区相同的掺杂类型，并且具有与源极和漏极区不同的掺杂浓度。 此时，在形成掺杂部分期间的掺杂通过原位法进行，其中在与前一步骤所用装置相同的装置中喷射含杂质的气体。 因此，可以降低透明半导体活性层与透明电极接触而产生的高接触电阻，从而形成欧姆接触。

公开(公告)号：US08541258B2

公开(公告)日：2013-09-24

申请号：US13091614

申请日：2011-04-21

申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang

发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

公开(公告)号：US08148779B2

公开(公告)日：2012-04-03

申请号：US12352851

申请日：2009-01-13

申请人： Jae-Kyeong Jeong ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeon-Gon Mo ,  Hui-Won Yang

发明人： Jae-Kyeong Jeong ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeon-Gon Mo ,  Hui-Won Yang

IPC分类号： H01L31/0256 ,  H01L29/12 ,  H01L21/02 ,  H01L31/00

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78696

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），制造TFT的方法以及具有该TFT的平板显示装置包括形成在基板上的栅电极; 由氧化物半导体制成的有源层，并通过栅极绝缘层与栅电极绝缘; 源极和漏极耦合到有源层; 以及形成在活性层的一个或两个表面上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

公开(公告)号：US20120052609A1

公开(公告)日：2012-03-01

申请号：US13293158

申请日：2011-11-10

申请人： Hong-Han JEONG ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Hui-Won Yang

发明人： Hong-Han JEONG ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Hui-Won Yang

IPC分类号： H01L33/08

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.

摘要翻译： 一种薄膜晶体管（TFT），包括基板，基板上的栅电极，包括沟道区，源极区和漏极区的氧化物半导体层，栅电极和氧化物半导体层之间的栅极绝缘层 以及与氧化物半导体层的源极和漏极区域接触的源极和漏极，其中氧化物半导体层具有包括下层和上层的GaInZnO（GIZO）双层结构，并且上层具有 不同的铟（In）浓度比下层。

公开(公告)号：US20100176394A1

公开(公告)日：2010-07-15

申请号：US12654939

申请日：2010-01-08

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

IPC分类号： H01L33/00 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/45

摘要： An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

摘要翻译： 一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。 薄膜晶体管包括形成在基板上的栅电极，形成在基板上并覆盖栅电极的栅极绝缘层，形成在栅绝缘层上并覆盖栅电极的氧化物半导体层，形成在源极上的钛层 区域和漏区，以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。 钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻，在它们之间形成稳定的界面接合，并阻止铜的扩散。

公开(公告)号：US20100176383A1

公开(公告)日：2010-07-15

申请号：US12654938

申请日：2010-01-08

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L2251/305

摘要： Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

摘要翻译： 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括具有以第一氧化物半导体层和第二氧化物半导体层堆叠的结构形成的激活层的驱动单元的薄膜晶体管，具有像素单元的薄膜晶体管 由第二氧化物半导体层形成的激活层和耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在第一氧化物半导体层上的沟道，其具有比第二氧化物半导体层更高的载流子浓度，具有高电荷迁移率，并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层，具有稳定且均匀的功能特性。

公开(公告)号：US07719185B2

公开(公告)日：2010-05-18

申请号：US11604285

申请日：2006-11-27

申请人： Dong-Un Jin ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Dong-Un Jin ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01J63/04

CPC分类号： H01L27/3244 ,  G02F2201/44 ,  H01L27/3232 ,  H01L2251/5323

摘要： An organic light emitting display (OLED), which includes a display unit and a controlling unit, is provided. The display unit includes an organic light emission layer and a transparent thin film transistor (TFT) to drive the organic light emission layer, and the display unit emits light into two opposite surfaces (upper and lower surfaces). The controlling unit includes an electro-optical layer that is capable of being switched from one state to another state by applying voltage to the layer. The controlling unit controls transmission of light emitted from the display unit. Therefore the flat panel display of the present invention is capable of displaying an image in one surface or in two surfaces. The selection of surface of image display can be manually or automatically controlled by a user. The controlling unit can includes a liquid crystal device, an electrophoretic device, or an electrochromic device.

摘要翻译： 提供了包括显示单元和控制单元的有机发光显示器（OLED）。 显示单元包括有机发光层和用于驱动有机发光层的透明薄膜晶体管（TFT），并且显示单元将光发射到两个相对的表面（上表面和下表面）中。 控制单元包括能够通过向层施加电压而从一种状态切换到另一种状态的电光层。 控制单元控制从显示单元发射的光的透射。 因此，本发明的平板显示器能够在一个表面或两个表面中显示图像。 图像显示的表面选择可以由用户手动或自动控制。 控制单元可以包括液晶装置，电泳装置或电致变色装置。

公开(公告)号：US20100072478A1

公开(公告)日：2010-03-25

申请号：US12591548

申请日：2009-11-23

申请人： Jae-Bon Koo ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L27/12

CPC分类号： H01L27/3276 ,  H01L27/3265

摘要： A flat panel display that can prevent a voltage drop of a driving power and, at the same time, minimizes the characteristic reduction of electronic devices located in a circuit region where various circuit devices are located includes: a substrate; an insulating film arranged on the substrate; a pixel region including at least one light emitting diode, the pixel region arranged on the insulating film and adapted to display an image; a circuit region arranged on the insulating film and including electronic devices adapted to control signals supplied to the pixel region; and a conductive film interposed between the substrate and the insulating film in a region corresponding to the pixel region and electrically connected to one electrode of the light emitting diode.