公开(公告)号：US09117777B2

公开(公告)日：2015-08-25

申请号：US14106699

申请日：2013-12-13

Applicant: IMEC

Inventor： Benjamin Vincent ,  Geert Eneman

IPC: H01L21/322 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762

CPC classification number: H01L21/3225 ,  H01L21/02532 ,  H01L21/02694 ,  H01L21/762 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for reducing defects from an active layer is disclosed. The active layer may be part of a semiconductor in a semiconductor device. The active layer may be defined at least laterally by an isolation structure, and may physically contact an isolation structure at a contact interface. The isolation structure and the active layer may abut on a common substantially planar surface. The method may include providing a patterned stress-inducing layer on the common substantially planar surface. The stress-inducing layer may be adapted for inducing a stress field in the active layer, and induced stress field may result in a shear stress on a defect in the active layer. The method may also include performing an anneal step after providing the patterned stress-inducing layer on the common substantially planar surface. The method may additionally include removing the patterned stress-inducing layer from the common substantially planar surface.

Abstract translation: 公开了一种用于从有源层减少缺陷的方法。 有源层可以是半导体器件中的半导体的一部分。 有源层可以至少由隔离结构侧向限定，并且可以在接触界面物理地接触隔离结构。 隔离结构和有源层可以邻接在共同的基本平坦的表面上。 该方法可以包括在共同的基本上平坦的表面上提供图案化的应力诱导层。 应力诱导层可以适于在活性层中诱导应力场，并且感应应力场可能导致活性层中缺陷的剪切应力。 该方法还可以包括在将图案化的应力诱导层提供在共同的基本平坦的表面上之后执行退火步骤。 该方法可以另外包括从共同的基本平坦的表面去除图案化的应力诱导层。