公开(公告)号：US20170170329A1

公开(公告)日：2017-06-15

申请号：US15062222

申请日：2016-03-07

Applicant: Industrial Technology Research Institute

Inventor： Ching-Wen Su ,  Tai-Jui Wang ,  Hsiao-Chiang Yao ,  Tsu-Chiang Chang ,  Bo-Yuan Su

IPC: H01L29/786 ,  H01L21/324 ,  H01L23/552

CPC classification number: H01L29/78675 ,  H01L21/324 ,  H01L23/552 ,  H01L27/1218 ,  H01L29/78603 ,  H01L29/78633

Abstract: In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the light reflective layer has a reflection wavelength of 200 nm˜1100 nm, a reflection ratio of greater than 80%, and a stress direction of the light reflective layer is the same as a stress direction of the flexible substrate. The device layer is located on the light reflective layer and the buffer layer.

公开(公告)号：US20170170207A1

公开(公告)日：2017-06-15

申请号：US15209780

申请日：2016-07-14

Applicant: Industrial Technology Research Institute

Inventor： Tai-Jui Wang ,  Tsu-Chiang Chang ,  Yu-Hua Chung ,  Wei-Han Chen ,  Hsiao-Chiang Yao

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78603 ,  H01L29/78675

Abstract: A semiconductor device is provided to include a flexible substrate, a barrier layer, a heat insulating layer, a device layer, a dielectric material later and a stress absorbing layer. The barrier layer is disposed on the flexible substrate. The heat insulating layer is disposed on the barrier layer, wherein the heat insulating layer has a thermal conductivity of less than 20 W/mK. The device layer is disposed on the heat insulating layer. The dielectric material layer is disposed on the device layer, and the dielectric material layer and the heat insulating layer include at least one trench. The stress absorbing layer is disposed on the dielectric material layer, and the stress absorbing layer fills into the at least one trench.