TOUCH PANEL SENSOR
    31.
    发明申请
    TOUCH PANEL SENSOR 审中-公开
    触摸面板传感器

    公开(公告)号:US20130249571A1

    公开(公告)日:2013-09-26

    申请号:US13990981

    申请日:2011-11-30

    IPC分类号: G01R1/04

    CPC分类号: G01R1/04 G06F3/044

    摘要: Provided is a touch panel sensor which has excellent durability particularly in a longitudinal direction as in the case in which an indentation load is imposed, rarely undergoes the increase in electrical resistivity which may be caused by the disconnection of a wire or as elapse of time, has high reliability and high glossiness, and also has an excellent color-displaying capability. This touch panel sensor comprises a transparent conductive film and a wiring that is connected to the transparent conductive film, wherein the wiring comprises a refractory metal film, an Al alloy film and a high-melting-point metal film in this order when observed from the side of a substrate, and wherein the Al alloy film contains a rare earth element in an amount of 0.05-5 atomic %. It is preferred for the touch panel sensor that the hardness is 2-3.5 GPa and the density of grain boundary triple junctions in the Al alloy structure is 2×108 /mm2 or more. It is also preferred for the touch panel sensor that the Young's modulus is 80-200 GPa and the maximum value of the unidirectional tangential diameter (Feret diameter) of grain boundary is 100-350 nm. It is also preferred for the touch panel sensor that the glossiness is 800% or higher.

    摘要翻译: 提供了一种触摸面板传感器,其特别是在纵向方向上具有优异的耐久性,如在施加压痕负荷的情况下,很少会由于电线断开或时间的流逝而导致的电阻率增加, 具有高可靠性和高光泽度,并且还具有出色的显色能力。 该触摸面板传感器包括透明导电膜和连接到透明导电膜的布线,其中当从该透明导电膜观察时,该布线依次包括耐火金属膜,Al合金膜和高熔点金属膜 并且其中Al合金膜含有0.05-5原子%的稀土元素。 触摸面板传感器优选硬度为2-3.5GPa,Al合金结构中的晶界三重结合密度为2×10 8 / mm 2以上。 触摸面板传感器也优选杨氏模量为80-200GPa,晶界的单向切向直径(Feret直径)的最大值为100-350nm。 触摸面板传感器也优选光泽度为800%以上。

    AL ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET
    33.
    发明申请
    AL ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET 有权
    用于显示装置的AL合金膜,显示装置和喷射目标

    公开(公告)号:US20110019350A1

    公开(公告)日:2011-01-27

    申请号:US12922965

    申请日:2009-04-23

    IPC分类号: H05K7/00 C22C21/00 C23C14/14

    摘要: Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.

    摘要翻译: 公开了一种用于显示装置的Al合金膜,即使应用低温热处理也能够实现令人满意的低电阻,可以实现Al合金膜与直接连接的Al透明像素电极之间的接触电阻的令人满意的降低 Al合金膜,并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子%的Co和0.2〜1.0原子%的Ge,并且满足Al合金膜中的Co含量和Ge含量具有由式(1)表示的关系的要求:[ Ge]≥0.25×[Co] +0.2(1)式(1)中,[Ge]表示Al合金膜中Ge的含量,原子% [Co]表示Al合金膜中Co的含量,原子%。

    Al alloy film for display device, display device, and sputtering target
    34.
    发明授权
    Al alloy film for display device, display device, and sputtering target 有权
    铝合金薄膜,显示装置,溅射靶

    公开(公告)号:US08422207B2

    公开(公告)日:2013-04-16

    申请号:US12922965

    申请日:2009-04-23

    IPC分类号: G06F1/16

    摘要: Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.

    摘要翻译: 公开了一种用于显示装置的Al合金膜,即使应用低温热处理,也能够实现令人满意的低电阻,可以实现Al合金膜和直接连接到Al合金膜的透明像素电极之间的接触电阻的令人满意的降低 Al合金膜,并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子%的Co和0.2〜1.0原子%的Ge,并且满足Al合金膜中的Co含量和Ge含量具有由式(1)表示的关系的要求:[ Ge]≥0.25×[Co] +0.2(1)式(1)中,[Ge]表示Al合金膜中Ge的含量,原子% [Co]表示Al合金膜中Co的含量,原子%。

    DISPLAY DEVICE, COPPER ALLOY FILM FOR USE THEREIN, AND COPPER ALLOY SPUTTERING TARGET
    35.
    发明申请
    DISPLAY DEVICE, COPPER ALLOY FILM FOR USE THEREIN, AND COPPER ALLOY SPUTTERING TARGET 审中-公开
    显示器件,铜合金膜及铜合金溅射靶

    公开(公告)号:US20110147753A1

    公开(公告)日:2011-06-23

    申请号:US13056444

    申请日:2009-08-14

    IPC分类号: H01L29/04 B32B17/06

    摘要: Disclosed is a Cu alloy film for a display device that has high adhesion to a glass substrate while maintaining a low electric resistance characteristic of Cu-based materials. The Cu alloy film is wiring in direct contact with a glass substrate on a board and contains 0.1 to 10.0 atomic % in total of one or more elements selected from the group consisting of Ti, Al, and Mg. Also disclosed is a display device comprising a thin-film transistor that comprises the Cu alloy film. In a preferred embodiment of the display device, the thin-film transistor has a bottom gate-type structure, and a gate electrode and scanning lines in the thin-film transistor comprise the Cu alloy film and are in direct contact with the glass substrate.

    摘要翻译: 公开了一种用于显示装置的Cu合金膜,其在保持Cu基材料的低电阻特性的同时对玻璃基板具有高粘附性。 Cu合金膜是与板上的玻璃基板直接接触的布线,并且含有0.1〜10.0原子%的一种以上选自Ti,Al,Mg的元素。 还公开了包括包含Cu合金膜的薄膜晶体管的显示装置。 在显示装置的优选实施例中,薄膜晶体管具有底栅型结构,并且薄膜晶体管中的栅电极和扫描线包括Cu合金膜并与玻璃基板直接接触。

    DISPLAY DEVICE, PROCESS FOR PRODUCING THE DISPLAY DEVICE, AND SPUTTERING TARGET
    36.
    发明申请
    DISPLAY DEVICE, PROCESS FOR PRODUCING THE DISPLAY DEVICE, AND SPUTTERING TARGET 审中-公开
    显示装置,用于制造显示装置的方法和喷射目标

    公开(公告)号:US20110008640A1

    公开(公告)日:2011-01-13

    申请号:US12922764

    申请日:2009-03-31

    摘要: Disclosed is a display device comprising an aluminum alloy film. In a wiring structure of a thin-film transistor substrate for use in display devices, the aluminum alloy film can realize direct contact between a thin film of an aluminum alloy and a transparent pixel electrode, can simultaneously realize low electric resistance and heat resistance, and can improve resistance to corrosion by an amine-based peeling liquid and an alkaline developing solution used in a thin-film transistor production process. In the display device, an oxide electroconductive film is in direct contact with an Al alloy film and at least a part of the Al alloy component is precipitated on the contact surface of the Al alloy film. The Al alloy film comprises at least one element (element X1) selected from the group consisting of Ni, Ag, Zn, and Co and at least one element (element X2) which, together with the element X1, can form an intermetallic compound. An intermetallic compound, which has a maximum diameter of not more than 150 nm and is represented by at least one of X1—X2 and Al—X1—X2, is formed in the Al alloy film.

    摘要翻译: 公开了一种包括铝合金膜的显示装置。 在用于显示装置的薄膜晶体管基板的布线结构中,铝合金膜可以实现铝合金薄膜和透明像素电极之间的直接接触,同时可以实现低电阻和耐热性,并且 可以通过在薄膜晶体管制造方法中使用的胺系剥离液和碱性显影液来提高耐腐蚀性。 在显示装置中,氧化物导电膜与Al合金膜直接接触,Al合金成分的至少一部分析出在Al合金膜的接触面上。 Al合金膜包括选自Ni,Ag,Zn和Co中的至少一种元素(元素X1)和与元素X1一起可以形成金属间化合物的至少一种元素(元素X2)。 在Al合金膜中形成具有最大直径不大于150nm并由至少一个X1-X2和Al-X1-X2表示的金属间化合物。