AL ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET
    1.
    发明申请
    AL ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET 有权
    用于显示装置的AL合金膜,显示装置和喷射目标

    公开(公告)号:US20110019350A1

    公开(公告)日:2011-01-27

    申请号:US12922965

    申请日:2009-04-23

    IPC分类号: H05K7/00 C22C21/00 C23C14/14

    摘要: Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.

    摘要翻译: 公开了一种用于显示装置的Al合金膜,即使应用低温热处理也能够实现令人满意的低电阻,可以实现Al合金膜与直接连接的Al透明像素电极之间的接触电阻的令人满意的降低 Al合金膜,并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子%的Co和0.2〜1.0原子%的Ge,并且满足Al合金膜中的Co含量和Ge含量具有由式(1)表示的关系的要求:[ Ge]≥0.25×[Co] +0.2(1)式(1)中,[Ge]表示Al合金膜中Ge的含量,原子% [Co]表示Al合金膜中Co的含量,原子%。

    Al alloy film for display device, display device, and sputtering target
    2.
    发明授权
    Al alloy film for display device, display device, and sputtering target 有权
    铝合金薄膜,显示装置,溅射靶

    公开(公告)号:US08422207B2

    公开(公告)日:2013-04-16

    申请号:US12922965

    申请日:2009-04-23

    IPC分类号: G06F1/16

    摘要: Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.

    摘要翻译: 公开了一种用于显示装置的Al合金膜,即使应用低温热处理,也能够实现令人满意的低电阻,可以实现Al合金膜和直接连接到Al合金膜的透明像素电极之间的接触电阻的令人满意的降低 Al合金膜,并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子%的Co和0.2〜1.0原子%的Ge,并且满足Al合金膜中的Co含量和Ge含量具有由式(1)表示的关系的要求:[ Ge]≥0.25×[Co] +0.2(1)式(1)中,[Ge]表示Al合金膜中Ge的含量,原子% [Co]表示Al合金膜中Co的含量,原子%。

    DISPLAY DEVICE, PROCESS FOR PRODUCING THE DISPLAY DEVICE, AND SPUTTERING TARGET
    4.
    发明申请
    DISPLAY DEVICE, PROCESS FOR PRODUCING THE DISPLAY DEVICE, AND SPUTTERING TARGET 审中-公开
    显示装置,用于制造显示装置的方法和喷射目标

    公开(公告)号:US20110008640A1

    公开(公告)日:2011-01-13

    申请号:US12922764

    申请日:2009-03-31

    摘要: Disclosed is a display device comprising an aluminum alloy film. In a wiring structure of a thin-film transistor substrate for use in display devices, the aluminum alloy film can realize direct contact between a thin film of an aluminum alloy and a transparent pixel electrode, can simultaneously realize low electric resistance and heat resistance, and can improve resistance to corrosion by an amine-based peeling liquid and an alkaline developing solution used in a thin-film transistor production process. In the display device, an oxide electroconductive film is in direct contact with an Al alloy film and at least a part of the Al alloy component is precipitated on the contact surface of the Al alloy film. The Al alloy film comprises at least one element (element X1) selected from the group consisting of Ni, Ag, Zn, and Co and at least one element (element X2) which, together with the element X1, can form an intermetallic compound. An intermetallic compound, which has a maximum diameter of not more than 150 nm and is represented by at least one of X1—X2 and Al—X1—X2, is formed in the Al alloy film.

    摘要翻译: 公开了一种包括铝合金膜的显示装置。 在用于显示装置的薄膜晶体管基板的布线结构中,铝合金膜可以实现铝合金薄膜和透明像素电极之间的直接接触,同时可以实现低电阻和耐热性,并且 可以通过在薄膜晶体管制造方法中使用的胺系剥离液和碱性显影液来提高耐腐蚀性。 在显示装置中,氧化物导电膜与Al合金膜直接接触,Al合金成分的至少一部分析出在Al合金膜的接触面上。 Al合金膜包括选自Ni,Ag,Zn和Co中的至少一种元素(元素X1)和与元素X1一起可以形成金属间化合物的至少一种元素(元素X2)。 在Al合金膜中形成具有最大直径不大于150nm并由至少一个X1-X2和Al-X1-X2表示的金属间化合物。

    DISPLAY DEVICE
    6.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号:US20100163877A1

    公开(公告)日:2010-07-01

    申请号:US12376863

    申请日:2007-09-13

    IPC分类号: H01L33/42 H01L33/16

    摘要: A display has a glass substrate provided with a transparent conducting film, thin-film transistors, and an aluminum alloy wiring film electrically connecting the thin-film transistors to the transparent conducting film. The aluminum alloy wiring film is a layered structure having a first layer (X) of an aluminum alloy comprising at least one element selected from the specific element group Q including Ni and Ag, and at least one element selected from the specific element group R including rare-earth elements and Mg in a content in the specific range, and a second layer (Y) of an aluminum alloy containing having a resistivity lower than that of the first layer (X). The first layer (X) is in direct contact with the transparent conducting film.

    摘要翻译: 显示器具有设置有透明导电膜,薄膜晶体管和将薄膜晶体管电连接到透明导电膜的铝合金布线膜的玻璃基板。 铝合金布线膜是具有铝合金的第一层(X)的层叠结构,所述第一层(X)包含选自包含Ni和Ag的特定元素组Q中的至少一种元素,以及选自特定元素基团R中的至少一种元素,包括 含量在特定范围内的稀土元素和Mg,以及含有比第一层(X)的电阻率低的铝合金的第二层(Y)。 第一层(X)与透明导电膜直接接触。

    Display device
    7.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号:US08044399B2

    公开(公告)日:2011-10-25

    申请号:US12376863

    申请日:2007-09-13

    摘要: A display has a glass substrate provided with a transparent conducting film, thin-film transistors, and an aluminum alloy wiring film electrically connecting the thin-film transistors to the transparent conducting film. The aluminum alloy wiring film is a layered structure having a first layer (X) of an aluminum alloy comprising at least one element selected from the specific element group Q including Ni and Ag, and at least one element selected from the specific element group R including rare-earth elements and Mg in a content in the specific range, and a second layer (Y) of an aluminum alloy containing having a resistivity lower than that of the first layer (X). The first layer (X) is in direct contact with the transparent conducting film.

    摘要翻译: 显示器具有设置有透明导电膜,薄膜晶体管和将薄膜晶体管电连接到透明导电膜的铝合金布线膜的玻璃基板。 铝合金布线膜是具有铝合金的第一层(X)的层叠结构,所述第一层(X)包含选自包含Ni和Ag的特定元素组Q中的至少一种元素,以及选自特定元素基团R中的至少一种元素,包括 含量在特定范围内的稀土元素和Mg,以及含有比第一层(X)的电阻率低的铝合金的第二层(Y)。 第一层(X)与透明导电膜直接接触。

    Optical recording medium having write once metal reflective film
    10.
    发明授权
    Optical recording medium having write once metal reflective film 失效
    具有一次写入金属反射膜的光记录介质

    公开(公告)号:US08187689B2

    公开(公告)日:2012-05-29

    申请号:US12303408

    申请日:2007-06-15

    IPC分类号: B32B3/02

    摘要: A pirated optical recording medium may be determined which is produced by physically transferring a shape of pits and lands formed on a substrate of an optical recording medium. The optical recording medium is provided with excellent weatherability and long-term storage reliability. A reflective film formed of an Ag alloy film of Ag100-x-yXxCuy, where X is at least one element among Ti, W, Ta, V, Mo, Nb and Zr, is formed on a substrate on which main data is recorded with a combination of pits and lands. A mark may be formed so that a reproduction signal level in the recorded mark of auxiliary data write once recorded on the reflective film is increased, and a reproduction signal level is decreased in an optical recording medium prepared by physically transferring the surface shape of the pits and lands of the substrate. A pirated optical recording medium may be determined in this manner.

    摘要翻译: 可以确定通过物理转移形成在光记录介质的基板上的凹坑和平台的形状而产生的盗版光学记录介质。 光学记录介质具有优良的耐候性和长期的存储可靠性。 由Ag100-x-yXxCuy的Ag合金膜形成的反射膜,其中X是Ti,W,Ta,V,Mo,Nb和Zr中的至少一种元素,在其上记录有主数据的基板上形成 坑和土地的组合。 可以形成标记,使得一旦记录在反射膜上的辅助数据的记录标记中的再现信号电平增加,并且通过物理地转移凹坑的表面形状而制备的光学记录介质中再现信号电平降低 和基底的区域。 可以以这种方式确定盗版光学记录介质。