公开(公告)号：US20110008640A1

公开(公告)日：2011-01-13

申请号：US12922764

申请日：2009-03-31

申请人： Hiroshi Goto ,  Akira Nanbu ,  Junichi Nakai ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Aya Miki

发明人： Hiroshi Goto ,  Akira Nanbu ,  Junichi Nakai ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Aya Miki

IPC分类号： G02F1/1343 ,  C09K19/00 ,  C22F1/04 ,  C23C14/14

CPC分类号： H01L29/458 ,  C22C21/00 ,  C22C21/10 ,  C23C14/3414 ,  H01L27/12 ,  H01L27/124 ,  H01L29/4908 ,  Y10T428/12049

摘要： Disclosed is a display device comprising an aluminum alloy film. In a wiring structure of a thin-film transistor substrate for use in display devices, the aluminum alloy film can realize direct contact between a thin film of an aluminum alloy and a transparent pixel electrode, can simultaneously realize low electric resistance and heat resistance, and can improve resistance to corrosion by an amine-based peeling liquid and an alkaline developing solution used in a thin-film transistor production process. In the display device, an oxide electroconductive film is in direct contact with an Al alloy film and at least a part of the Al alloy component is precipitated on the contact surface of the Al alloy film. The Al alloy film comprises at least one element (element X1) selected from the group consisting of Ni, Ag, Zn, and Co and at least one element (element X2) which, together with the element X1, can form an intermetallic compound. An intermetallic compound, which has a maximum diameter of not more than 150 nm and is represented by at least one of X1—X2 and Al—X1—X2, is formed in the Al alloy film.

摘要翻译： 公开了一种包括铝合金膜的显示装置。 在用于显示装置的薄膜晶体管基板的布线结构中，铝合金膜可以实现铝合金薄膜和透明像素电极之间的直接接触，同时可以实现低电阻和耐热性，并且 可以通过在薄膜晶体管制造方法中使用的胺系剥离液和碱性显影液来提高耐腐蚀性。 在显示装置中，氧化物导电膜与Al合金膜直接接触，Al合金成分的至少一部分析出在Al合金膜的接触面上。 Al合金膜包括选自Ni，Ag，Zn和Co中的至少一种元素（元素X1）和与元素X1一起可以形成金属间化合物的至少一种元素（元素X2）。 在Al合金膜中形成具有最大直径不大于150nm并由至少一个X1-X2和Al-X1-X2表示的金属间化合物。

公开(公告)号：US20110019350A1

公开(公告)日：2011-01-27

申请号：US12922965

申请日：2009-04-23

申请人： Junichi Nakai ,  Akira Nanbu ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Aya Miki

发明人： Junichi Nakai ,  Akira Nanbu ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Aya Miki

IPC分类号： H05K7/00 ,  C22C21/00 ,  C23C14/14

CPC分类号： H01L23/53219 ,  C23C14/185 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.

摘要翻译： 公开了一种用于显示装置的Al合金膜，即使应用低温热处理也能够实现令人满意的低电阻，可以实现Al合金膜与直接连接的Al透明像素电极之间的接触电阻的令人满意的降低 Al合金膜，并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子％的Co和0.2〜1.0原子％的Ge，并且满足Al合金膜中的Co含量和Ge含量具有由式（1）表示的关系的要求：[ Ge]≥0.25×[Co] +0.2（1）式（1）中，[Ge]表示Al合金膜中Ge的含量，原子％ [Co]表示Al合金膜中Co的含量，原子％。

公开(公告)号：US20110198602A1

公开(公告)日：2011-08-18

申请号：US13122937

申请日：2009-11-05

申请人： Akira Nanbu ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Junichi Nakai ,  Tomoya Kishi ,  Toshiaki Takagi ,  Shigenobu Namba ,  Mamoru Nagao ,  Nobuhiro Kobayashi

发明人： Akira Nanbu ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Junichi Nakai ,  Tomoya Kishi ,  Toshiaki Takagi ,  Shigenobu Namba ,  Mamoru Nagao ,  Nobuhiro Kobayashi

IPC分类号： H01L33/08 ,  C22C21/00 ,  C23C14/34 ,  C22C21/12 ,  H01L33/16

CPC分类号： C23C14/18 ,  C23C14/3414 ,  G02F1/136227 ,  G02F1/1368 ,  H01L21/2855 ,  H01L23/53219 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  Y10T428/12014 ,  H01L2924/00

摘要： Disclosed is an Al alloy film which can be in direct contact with a transparent pixel electrode in a wiring structure of a thin film transistor substrate that is used in a display device, and which has improved corrosion resistance against an amine remover liquid that is used during the production process of the thin film transistor. Also disclosed is a display device using the Al alloy film. Specifically disclosed is an Al alloy film for a display device, said Al alloy film being directly connected with a transparent conductive film on a substrate of a display device, and containing 0.05-2.0 atom % of Ge, at least one element selected from among element group X (Ni, Ag, Co, Zn and Cu), and 0.02-2 atom % of at least one element selected from among element group Q consisting of the rare earth elements. A Ge-containing deposit and/or a Ge-concentrated part is present in the Al alloy film for a display device. Also specifically disclosed is a display device comprising the Al alloy film.

摘要翻译： 公开了一种Al合金膜，其可以与用于显示装置的薄膜晶体管基板的布线结构中的透明像素电极直接接触，并且其对于在用于显示装置的胺去除剂液体下具有改善的耐腐蚀性 薄膜晶体管的生产工艺。 还公开了使用Al合金膜的显示装置。 具体公开了一种用于显示装置的Al合金膜，所述Al合金膜与显示装置的基板上的透明导电膜直接连接，并含有0.05-2.0原子％的Ge，至少一种元素选自元素 组X（Ni，Ag，Co，Zn和Cu）和0.02-2原子％的选自由稀土元素构成的元素组Q中的至少一种元素。 在用于显示装置的Al合金膜中存在含Ge沉积物和/或Ge浓缩部分。 还具体公开了包括Al合金膜的显示装置。

公开(公告)号：US08422207B2

公开(公告)日：2013-04-16

申请号：US12922965

申请日：2009-04-23

申请人： Junichi Nakai ,  Akira Nanbu ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Aya Miki

发明人： Junichi Nakai ,  Akira Nanbu ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Aya Miki

IPC分类号： G06F1/16

CPC分类号： H01L23/53219 ,  C23C14/185 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.

摘要翻译： 公开了一种用于显示装置的Al合金膜，即使应用低温热处理，也能够实现令人满意的低电阻，可以实现Al合金膜和直接连接到Al合金膜的透明像素电极之间的接触电阻的令人满意的降低 Al合金膜，并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子％的Co和0.2〜1.0原子％的Ge，并且满足Al合金膜中的Co含量和Ge含量具有由式（1）表示的关系的要求：[ Ge]≥0.25×[Co] +0.2（1）式（1）中，[Ge]表示Al合金膜中Ge的含量，原子％ [Co]表示Al合金膜中Co的含量，原子％。

公开(公告)号：US20090242394A1

公开(公告)日：2009-10-01

申请号：US12414877

申请日：2009-03-31

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

IPC分类号： C23C14/34 ,  C21D1/00

CPC分类号： C23C14/3414 ,  C22C21/00 ,  C22F1/04

摘要： The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.

摘要翻译： 本发明提供能够在使用溅射靶的初始阶段减少飞溅产生的Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，从而防止由此引起的缺陷 在互连膜等中，提高FPD的成品率和操作性能，以及其制造方法。 本发明涉及一种Al基合金溅射靶，它是Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，其包含至少一种选自A ，Co），选自B族（Cu，Ge）中的至少一种以及选自维氏硬度（HV）为35以上的C（La，Gd，Nd）中的至少一种。

公开(公告)号：US20100328247A1

公开(公告)日：2010-12-30

申请号：US12918727

申请日：2009-02-20

申请人： Aya Miki ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Tomoya Kishi ,  Akira Nanbu

发明人： Aya Miki ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Tomoya Kishi ,  Akira Nanbu

IPC分类号： G06F3/041

CPC分类号： G06F3/041 ,  C22C21/00 ,  H05K1/09

摘要： Disclosed is a highly reliable touch panel sensor comprising a guiding wiring that is less likely to cause an increase in electrical resistance and disconnection with the elapse of time, has a low electrical resistance, can ensure electrical conduction to a transparent conductive film, and can be connected directly to the transparent conductive film. The touch panel sensor comprises a transparent conductive film and a guiding wiring made of an aluminum alloy film connected directly to the transparent conductive film. The aluminum alloy film comprises 0.2 to 10 atomic% in total of at least one element selected from an X group consisting of Ni and Co. The aluminum alloy film has a hardness of 2 to 15 GPa.

摘要翻译： 公开了一种高度可靠的触摸面板传感器，其包括不太可能随时间推移而导致电阻和断开增加的引导布线，具有低电阻，可以确保对透明导电膜的导电，并且可以 直接连接到透明导电膜。 触摸面板传感器包括透明导电膜和由直接连接到透明导电膜的铝合金膜制成的引导布线。 铝合金膜的总和为0.2〜10原子％，选自由Ni，Co组成的X族中的至少一种元素。铝合金膜的硬度为2〜15GPa。

公开(公告)号：US08299614B2

公开(公告)日：2012-10-30

申请号：US12936572

申请日：2009-04-17

申请人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

发明人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

IPC分类号： H01L23/48

CPC分类号： H01L21/26506 ,  H01L21/2236 ,  H01L21/76829 ,  H01L21/76838 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnection structure, containing a substrate and, in the following order from a side of the substrate: (I) a semiconductor layer; (II) a multilayer structure including (II-a) a first layer containing at least one type of an element selected from the group consisting of nitrogen, carbon and fluorine and (II-b) an Al—Si diffusion layer containing Al and Si; and (III) an Al film of pure Al or an Al alloy, wherein the at least one of element selected from the group consisting of nitrogen, carbon, and fluorine in the first layer is bonded with Si contained in the semiconductor layer.

摘要翻译： 一种互连结构，其包含基板，并且从所述基板的侧面按以下顺序：（I）半导体层; （II）包括（II-a）含有选自氮，碳和氟中的至少一种元素的第一层和（II-b）含有Al和Si的Al-Si扩散层的多层结构 ; 和（III）纯Al或Al合金的Al膜，其中在第一层中选自氮，碳和氟的至少一种元素与包含在半导体层中的Si结合。

公开(公告)号：US20110024761A1

公开(公告)日：2011-02-03

申请号：US12936572

申请日：2009-04-17

申请人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

发明人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

IPC分类号： H01L33/16 ,  H01L21/20

CPC分类号： H01L21/26506 ,  H01L21/2236 ,  H01L21/76829 ,  H01L21/76838 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a direct contact technology by which a barrier metal layer between an Al alloy interconnection composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy interconnection can be directly and surely connected to the semiconductor layer within a wide process margin. In an interconnection structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al—Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen, carbon or fluorine contained in the (N, C, F) layer is bonded with Si contained in the semiconductor layer.

摘要翻译： 提供了一种直接接触技术，通过该技术可以消除由纯Al或Al合金构成的Al合金互连与半导体层之间的阻挡金属层，并且Al合金互连可以在宽的范围内直接且可靠地连接到半导体层 过程保证金 在互连结构中，从衬底侧依次从衬底上提供由纯Al或Al合金构成的半导体层和Al合金膜。 包含选自由氮，碳和氟组成的组中的至少一种元素和包含Al和Si的Al-Si扩散层的（N，C，F）层的多层结构按此顺序包括 从衬底侧在半导体层和Al合金膜之间。 （N，C，F）层中所含的至少一种元素即氮，碳或氟与包含在半导体层中的Si键合。

公开(公告)号：US08535997B2

公开(公告)日：2013-09-17

申请号：US12999034

申请日：2009-07-03

申请人： Nobuyuki Kawakami ,  Shinya Fukuma ,  Aya Miki ,  Mototaka Ochi ,  Shinya Morita ,  Yoshihiro Yokota ,  Hiroshi Goto

发明人： Nobuyuki Kawakami ,  Shinya Fukuma ,  Aya Miki ,  Mototaka Ochi ,  Shinya Morita ,  Yoshihiro Yokota ,  Hiroshi Goto

IPC分类号： H01L21/84

CPC分类号： H01L23/53238 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L21/28525 ,  H01L21/76843 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer.

摘要翻译： 提供一种直接接触技术，通过该技术可以消除由纯Cu或Cu合金构成的Cu合金布线与半导体层之间的阻挡金属层，并且Cu合金布线可以直接和可靠地连接到半导体层内 加工边缘宽 布线结构从衬底侧依次设置有半导体层和由纯Cu或Cu合金构成的Cu合金膜。 在半导体层和Cu合金膜之间包含层叠结构。 层叠结构由（N，C，F）层构成，其含有选自由氮，碳和氟组成的组中的至少一种元素，以及含有Cu和Si的Cu-Si扩散层， 这个顺序是从衬底一侧。 此外，至少从由氮，碳和氟组成的组中选择的一种元素与包含在半导体层中的Si键合。

公开(公告)号：US20110121297A1

公开(公告)日：2011-05-26

申请号：US12999034

申请日：2009-07-03

申请人： Nobuyuki Kawakami ,  Shinya Fukuma ,  Aya Miki ,  Mototaka Ochi ,  Shinya Morita ,  Yoshihiro Yokota ,  Hiroshi Goto

发明人： Nobuyuki Kawakami ,  Shinya Fukuma ,  Aya Miki ,  Mototaka Ochi ,  Shinya Morita ,  Yoshihiro Yokota ,  Hiroshi Goto

IPC分类号： H01L29/02 ,  H01L23/48 ,  H01L33/00

CPC分类号： H01L23/53238 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L21/28525 ,  H01L21/76843 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer.

摘要翻译： 提供一种直接接触技术，通过该技术可以消除由纯Cu或Cu合金构成的Cu合金布线与半导体层之间的阻挡金属层，并且Cu合金布线可以直接和可靠地连接到半导体层内 加工边缘宽 在基板侧依次配置半导体层和由纯Cu或Cu合金构成的Cu合金膜。 在半导体层和Cu合金膜之间包含层叠结构。 层叠结构由（N，C，F）层构成，其含有选自由氮，碳和氟组成的组中的至少一种元素，以及含有Cu和Si的Cu-Si扩散层， 这个顺序是从衬底一侧。 此外，至少从由氮，碳和氟组成的组中选择的一种元素与包含在半导体层中的Si键合。