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    ESD protection of an RF PA semiconductor die using a PA controller semiconductor die
    31.
    发明授权
    ESD protection of an RF PA semiconductor die using a PA controller semiconductor die 有权
    使用PA控制器半导体管芯的RF PA半导体管芯的ESD保护

    公开(公告)号：US08842399B2

    公开(公告)日：2014-09-23

    申请号：US13288373

    申请日：2011-11-03

    Applicant: David E. Jones ,  William David Southcombe ,  Chris Levesque ,  Scott Yoder ,  Terry J. Stockert

    Inventor： David E. Jones ,  William David Southcombe ,  Chris Levesque ,  Scott Yoder ,  Terry J. Stockert

    IPC: H02H3/22 ,  H03F1/52 ,  H03F3/24 ,  H03F3/19 ,  H02H9/04

    CPC classification number: H03F1/52 ,  H02H9/046 ,  H03F3/19 ,  H03F3/245

    Abstract: A power amplifier (PA) controller semiconductor die and a first radio frequency (RF) PA semiconductor die are disclosed. The PA controller semiconductor die includes a first electro-static discharge (ESD) protection circuit, which ESD protects and provides a first ESD protected signal. The RF PA semiconductor die receives the first ESD protected signal. In one embodiment of the PA controller semiconductor die, the first ESD protected signal is an envelope power supply signal. The PA controller semiconductor die may be a Silicon complementary metal-oxide-semiconductor (CMOS) semiconductor die and the RF PA semiconductor die may be a Gallium Arsenide semiconductor die.

    Abstract translation: 公开了功率放大器（PA）控制器半导体管芯和第一射频（RF）PA半导体管芯）。 PA控制器半导体管芯包括第一静电放电（ESD）保护电路，其ESD保护并提供第一ESD保护信号。 RF PA半导体管芯接收第一个ESD保护信号。 在PA控制器半导体管芯的一个实施例中，第一ESD保护信号是包络电源信号。 PA控制器半导体管芯可以是硅互补金属氧化物半导体（CMOS）半导体管芯，并且RF PA半导体管芯可以是砷化镓半导体管芯。

    Look-up table based configuration of a DC-DC converter
    38.
    发明授权
    Look-up table based configuration of a DC-DC converter 有权
    DC-DC转换器的基于查找表的配置

    公开(公告)号：US09362825B2

    公开(公告)日：2016-06-07

    申请号：US13287672

    申请日：2011-11-02

    Applicant: William David Southcombe ,  Chris Levesque ,  Jean-Christophe Berchtold ,  David E. Jones ,  Scott Yoder ,  Terry J. Stockert

    Inventor： William David Southcombe ,  Chris Levesque ,  Jean-Christophe Berchtold ,  David E. Jones ,  Scott Yoder ,  Terry J. Stockert

    IPC: H01Q11/12 ,  H04B1/04 ,  H02M3/157

    CPC classification number: H02M3/157

    Abstract: RF PA circuitry and a DC-DC converter, which includes an RF PA envelope power supply and DC-DC control circuitry, are disclosed. The PA envelope power supply provides an envelope power supply signal to the RF PA circuitry. The DC-DC control circuitry has a DC-DC look-up table (LUT) structure, which has at least a first DC-DC LUT. The DC-DC control circuitry uses DC-DC LUT index information as an index to the DC-DC LUT structure to obtain DC-DC converter operational control parameters. The DC-DC control circuitry then configures the PA envelope power supply using the DC-DC converter operational control parameters. Using the DC-DC LUT structure provides flexibility in configuring the DC-DC converter for different applications, for multiple static operating conditions, for multiple dynamic operating conditions, or any combination thereof.

    Abstract translation: 公开了RF PA电路和DC-DC转换器，其包括RF PA包络电源和DC-DC控制电路。 PA封装电源为RF PA电路提供信号电源信号。 DC-DC控制电路具有至少具有第一DC-DC LUT的DC-DC查找表（LUT）结构。 DC-DC控制电路使用DC-DC LUT索引信息作为DC-DC LUT结构的索引，以获得DC-DC转换器的操作控制参数。 DC-DC控制电路然后使用DC-DC转换器的操作控制参数配置PA封装电源。 使用DC-DC LUT结构为多种静态工作条件，多种动态工作条件或其任何组合提供了灵活的配置，适用于不同应用的DC-DC转换器。

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