公开(公告)号：US20100283381A1

公开(公告)日：2010-11-11

申请号：US11517421

申请日：2006-09-06

申请人： Kohsei Takahashi ,  Naoto Hirosaki

发明人： Kohsei Takahashi ,  Naoto Hirosaki

IPC分类号： H01J1/63 ,  C09K11/78

CPC分类号： C09K11/0883 ,  C04B35/597 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3865 ,  C04B2235/3873 ,  C04B2235/3895 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/766 ,  C04B2235/767 ,  C04B2235/9646 ,  C09K11/7734 ,  H01L33/502 ,  H01L2924/181 ,  H01L2924/00012

摘要： A JEM phase phosphor having superior luminous efficiency is obtained, and a light emitting device is provided, which includes first and second phosphors and in which fluorescence from the first phosphor is not much absorbed by the second phosphor, with the JEM phase phosphor used as a first phosphor. The first phosphor is the JEM phase phosphor having optical absorption of at most 30% at a wavelength in a relation of complementary color to the emission wavelength of the first phosphor. In the light emitting device having a combination of the first phosphor and the second phosphor emitting fluorescence of longer wavelength than the first phosphor, the first phosphor has optical absorption at the emission wavelength of the second phosphor of at most 30%.

摘要翻译： 获得了具有优异的发光效率的JEM相荧光体，并且提供了包括第一和第二荧光体并且来自第一荧光体的荧光不被第二荧光体吸收的发光器件，其中JEM相荧光体用作 第一荧光粉。 第一荧光体是在互补色与第一荧光体的发射波长的关系的波长处具有至多30％的光吸收的JEM相荧光体。 在具有发射比第一荧光体长的荧光的第一荧光体和第二荧光体的组合的发光器件中，第一荧光体在第二荧光体的发射波长处具有至多30％的光吸收。

公开(公告)号：US20080297031A1

公开(公告)日：2008-12-04

申请号：US12155073

申请日：2008-05-29

申请人： Kohsei Takahashi ,  Masamichi Harada ,  Naoto Hirosaki

发明人： Kohsei Takahashi ,  Masamichi Harada ,  Naoto Hirosaki

IPC分类号： H01J1/62 ,  B05D5/06

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method of manufacturing a first phosphor of which emission spectrum shape well matches with a color filter of three primary colors of light, a light-emitting device including the first phosphor, and an image display apparatus including the light-emitting device are provided. The light-emitting device includes a semiconductor light-emitting element emitting excitation light and the first phosphor absorbing the excitation light and emitting green light. The first phosphor contains a solid solution of aluminum element and a metal element M selected from the group consisting of Mn, Ce and Eu in crystals of an oxynitride having a β-type Si3N4 crystal structure, an amount of oxygen in the crystals being not higher than 0.8 mass %.

摘要翻译： 提供一种制造发光光谱形状与三原色滤色器良好匹配的第一荧光体的制造方法，包括第一荧光体的发光装置和包括该发光装置的图像显示装置。 发光装置包括发射激发光的半导体发光元件和吸收激发光并发出绿光的第一荧光体。 第一荧光体在具有β型Si 3 N 4晶体结构的氧氮化物的晶体中含有铝元素的固溶体和选自Mn，Ce和Eu的金属元素M，晶体中的氧的量不高 大于0.8质量％。

公开(公告)号：US20070278930A1

公开(公告)日：2007-12-06

申请号：US11808112

申请日：2007-06-06

申请人： Kohsei Takahashi ,  Naoto Hirosaki

发明人： Kohsei Takahashi ,  Naoto Hirosaki

IPC分类号： H01J63/04 ,  C09K11/08 ,  C09K11/77

CPC分类号： H05B33/14 ,  C04B35/597 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3865 ,  C04B2235/3878 ,  C04B2235/3895 ,  C04B2235/442 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/766 ,  C04B2235/80 ,  C09K11/0883 ,  C09K11/7774 ,  H01L33/502

摘要： The present invention provides an oxynitride phosphor represented by a composition formula M(1)1−jM(2)jSibAlcOdNe (composition formula I) or a composition formula M(1)1−a−jM(2)jCeaSibAlcOdNe (composition formula II) and containing 50% or more of a JEM phase, and a light emitting device including a semiconductor light emitting element emitting an excited light, a first phosphor that is the oxynitride phosphor according to the present invention that absorbs the excited light and emits a fluorescence, and a kind or a plurality of kinds of second phosphor(s) that absorb(s) the excited light and emit(s) a fluorescence having a longer wavelength than the fluorescence emitted by the first phosphor. Thereby, a novel oxynitride phosphor being capable of highly efficiently emitting mainly a light having a wavelength of 510 nm or less and a light emitting device using the same can be provided.

摘要翻译： 本发明提供一种由组成式M（1）表示的氧氮化物荧光体。1-j M（2）N 1 Si B （组成式I）或组成式M（1）1-aj M（2） ）C 1 a C a C a C b C a C a C b C a C a C b C a C b C a C b （组合物式II），含有50％以上的JEM相，以及包含发射激发光的半导体发光元件的发光元件，作为本发明的氮氧化物荧光体的第一荧光体， 吸收激发的光并发出荧光，并且吸收激发光并发射具有比由第一荧光体发射的荧光更长的波长的荧光的一种或多种第二磷光体 。 因此，可以提供能够高效率地发射波长为510nm以下的光的新型氮氧化物荧光体和使用该氧化氮的荧光体。

公开(公告)号：US20060186377A1

公开(公告)日：2006-08-24

申请号：US11360373

申请日：2006-02-22

申请人： Kohsei Takahashi ,  Naoto Hirosaki

发明人： Kohsei Takahashi ,  Naoto Hirosaki

IPC分类号： H01L33/00 ,  H01J1/62 ,  C09K11/08

CPC分类号： C09K11/7774 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides an oxynitride phosphor represented by a composition formula M1-aCeaSibAlcOdNe, wherein M denotes La or a compound of which main component is La and sub-component is at least one kind of element selected from the group consisting of Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu; the a that represents a composition ratio of Ce is a real number satisfying 0.1≦a≦1; the b that represents a composition ratio of Si is a real number satisfying b=(6−z)×f; the c that represents a composition ratio of Al is a real number satisfying c=(1+z)×g; the d that represents a composition ratio of O is a real number satisfying d=z×h; the e that represents a composition ratio of N is a real number satisfying e=(10−z)×i; the z is a real number satisfying 0.1≦z≦3; the f is a real number satisfying 0.7≦f≦1.3; the g is a real number satisfying 0.7≦g≦3; the h is a real number satisfying 0.7≦h≦3; the i is a real number satisfying 0.7≦i≦1.3; and a JEM phase is contained in an amount of 50% or more, and a semiconductor light-emitting device that uses the oxynitride phosphor.

摘要翻译： 本发明提供了一种由组成式M 1-a a a a b B a Al C O O 2表示的氧氮化物荧光体 其中M表示La或主要成分为La的化合物，副成分为选自Pr， Nd，Sm，Eu，Gd，Th，Dy，Ho，Er，Tm，Yb和Lu; 表示Ce的组成比的a是满足0.1 <= a <= 1的实数; 表示Si的组成比的b是满足b =（6-z）×f的实数; 表示Al的组成比的c是满足c =（1 + z）×g的实数; 表示O的组成比的d是满足d = zxh的实数; 表示N的组成比的e是满足e =（10-z）xi的实数; z是满足0.1 <= z <= 3的实数; f是满足0.7 <= f <= 1.3的实数; g是满足0.7 <= g <= 3的实数; h是满足0.7 <= h <= 3的实数; 我是一个满足0.7 <= i <= 1.3的实数; 并且包含50％以上的JEM相和使用该氮氧化物荧光体的半导体发光装置。

公开(公告)号：US4769822A

公开(公告)日：1988-09-06

申请号：US910530

申请日：1986-09-23

申请人： Takahiro Suyama ,  Kohsei Takahashi ,  Saburo Yamamoto ,  Toshiro Hayakawa ,  Masafumi Kondo

发明人： Takahiro Suyama ,  Kohsei Takahashi ,  Saburo Yamamoto ,  Toshiro Hayakawa ,  Masafumi Kondo

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/34 ,  H01S3/19

CPC分类号： H01S5/12 ,  H01S5/1237 ,  H01S5/2059 ,  H01S5/2231 ,  H01S5/3428

摘要： A semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets in the region, except for the region corresponding to said striped diffusion region, which is positioned at the interface between the optical guiding layer and the second cladding layer.

摘要翻译： 一种半导体激光器件，包括依次包含第一包层，有源层，光导层和第二包层的激光振荡操作区域，其中从一个第一包层形成带状杂质扩散区域 除了对应于所述条纹扩散区域的区域之外，与该区域中的两个小平面平行地形成具有间隔的间距的多个窄带的GaAs的另一个面和多个窄带的GaAs，所述区域位于光引导层 和第二覆层。

公开(公告)号：US4737959A

公开(公告)日：1988-04-12

申请号：US772789

申请日：1985-09-05

申请人： Takahiro Suyama ,  Toshiro Hayakawa ,  Kohsei Takahashi ,  Saburo Yamamoto

发明人： Takahiro Suyama ,  Toshiro Hayakawa ,  Kohsei Takahashi ,  Saburo Yamamoto

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4031 ,  H01S5/223

摘要： A semiconductor laser array device comprising a substrate having a plurality of adjacent striped channels on its surface, and a plurality of laser operation areas each of which contains a cladding layer, an active layer and another cladding layer which have been successively formed on the surface of said substrate by molecular beam epitaxy or metal organic chemical vapor deposition in such a manner that the surface of each of these layers becomes parallel to the surface of said substrate.

摘要翻译： 一种半导体激光器阵列器件，包括在其表面上具有多个相邻条纹沟道的衬底，以及多个激光器操作区域，每个激光器操作区域包含已经依次形成在表面上的覆层，有源层和另一覆层 所述衬底通过分子束外延或金属有机化学气相沉积，使得这些层中的每一层的表面平行于所述衬底的表面。