公开(公告)号：US07800969B2

公开(公告)日：2010-09-21

申请号：US12565587

申请日：2009-09-23

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G11C7/02

CPC分类号： G11C11/4091 ,  G11C7/08

摘要： A semiconductor memory device can stabilize a voltage level of a normal driving voltage terminal in a normal driving operation, which is performed after an overdriving operation, even when an overdriving voltage is unstable due to environmental factors of the semiconductor memory device in the overdriving operation. The semiconductor memory device includes a bit line sense amplifier for performing an amplification operation using a normal driving voltage or an overdriving voltage to sense and amplify data applied to bit lines, a normal driving voltage compensator configured to drive a normal driving voltage terminal according to a voltage level of the normal driving voltage terminal and target normal driving voltage levels, and a discharge enable signal generator configured to generate a discharge enable signal by adjusting an activation period of the discharge enable signal according to the overdriving voltage.

摘要翻译： 半导体存储器件即使在过驱动操作中由于半导体存储器件的环境因素导致过驱动电压不稳定，也能够在过驱动之后执行的正常驱动操作中稳定正常驱动电压端子的电压电平。 半导体存储器件包括：位线读出放大器，用于使用正常驱动电压或过驱动电压进行放大操作，以检测和放大施加到位线的数据;正常驱动电压补偿器，被配置为驱动正常驱动电压端子， 正常驱动电压端子的电压电平和目标正常驱动电压电平，以及放电使能信号发生器，被配置为通过根据过驱动电压调节放电使能信号的激活周期来产生放电使能信号。

公开(公告)号：US07800958B2

公开(公告)日：2010-09-21

申请号：US12206422

申请日：2008-09-08

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G11C16/04

CPC分类号： G11C5/147

摘要： A voltage generating unit of a semiconductor memory device makes it possible to reduce a peak current value when generating a high voltage. The voltage generating unit of the semiconductor memory device includes a detecting unit configured to detect a voltage level of a high voltage by comparing a reference voltage with a fed-back high voltage, an oscillating unit configured to generate a plurality of clock signals with different operation time points on the basis of an output signal of the detecting unit, and a plurality of pumping units configured to generate the high voltage according to pumping control signals based on the clock signals.

摘要翻译： 半导体存储器件的电压产生单元可以在产生高电压时降低峰值电流值。 半导体存储器件的电压产生单元包括：检测单元，被配置为通过将参考电压与反馈高电压进行比较来检测高电压电压;振荡单元，被配置为生成具有不同操作的多个时钟信号 基于检测单元的输出信号的时间点，以及被配置为根据基于时钟信号的泵送控制信号产生高电压的多个泵送单元。

公开(公告)号：US07719912B2

公开(公告)日：2010-05-18

申请号：US12076037

申请日：2008-03-13

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G11C7/02

CPC分类号： G11C11/4097 ,  G11C7/062 ,  G11C7/18 ,  G11C11/4091 ,  G11C2207/002

摘要： A semiconductor memory device for sensing voltages of bit lines in high speed includes: a first bit line pair to a fourth bit line pair each coupled to a different unit cell array; a bit line sense amplifying unit coupled to the first bit line pair to the fourth bit line pair for amplifying data transmitted through the first bit line pair to the fourth bit line pair; and a switching block for connecting one of the first bit line pair to the fourth bit line pair with the bit line sense amplifying unit in response to a control signal.

摘要翻译： 用于感测高速位线电压的半导体存储器件包括：与第四位线对对应的第一位线对，每对耦合到不同的单元阵列; 耦合到第四位线对的第一位线对的位线读出放大单元，用于将通过第一位线对传输的数据放大到第四位线对; 以及切换块，用于响应于控制信号，将与位线检测放大单元的第一位线对与第四位线对之一连接。

公开(公告)号：US20070069809A1

公开(公告)日：2007-03-29

申请号：US11529257

申请日：2006-09-29

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G05F1/10

CPC分类号： G05F1/465

摘要： An internal voltage generator includes a voltage comparator operating in response to an enable signal, comparing a reference voltage with a feedback voltage and outputting a comparison signal through a first node. A driving controller outputs a drive control signal in response to the comparison signal. An output driver outputs an internal voltage through a second node in response to the drive control signal. An initial operation stabilizer controls the driving controller for a certain period at which the enable signal is enabled to block an output of the drive control signal.

摘要翻译： 内部电压发生器包括响应于使能信号而工作的电压比较器，将参考电压与反馈电压进行比较，并通过第一节点输出比较信号。 驱动控制器响应于比较信号输出驱动控制信号。 输出驱动器响应于驱动控制信号而通过第二节点输出内部电压。 初始操作稳定器在使能信号被使能以阻止驱动控制信号的输出的一定时间段内控制驱动控制器。

公开(公告)号：US08559245B2

公开(公告)日：2013-10-15

申请号：US12331289

申请日：2008-12-09

申请人： Khil-Ohk Kang ,  Kyung-Whan Kim

发明人： Khil-Ohk Kang ,  Kyung-Whan Kim

IPC分类号： G11C7/12 ,  G11C8/08

CPC分类号： G11C5/147 ,  G11C11/4099

摘要： An internal voltage generating circuit of a semiconductor memory apparatus includes a first voltage generating unit to output a first output voltage to a common node, the first output voltage is generated in response to a first reference voltage, and a second voltage generating unit to output a second output voltage to the common node, the second output voltage is generated in response to a second reference voltage.

摘要翻译： 半导体存储装置的内部电压产生电路包括：第一电压产生单元，用于向公共节点输出第一输出电压，响应于第一参考电压产生第一输出电压;以及第二电压产生单元， 第二输出电压到公共节点，响应于第二参考电压产生第二输出电压。

公开(公告)号：US08446790B2

公开(公告)日：2013-05-21

申请号：US13190103

申请日：2011-07-25

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G11C29/00

CPC分类号： G11C5/147

摘要： A reference voltage supplying circuit can include an internal reference voltage generating unit configured to generate an internal reference voltage, a pad configured to receive an external reference voltage, a switching unit selectively configured to supply the internal reference voltage or the external reference voltage to an internal voltage generator in a test mode.

摘要翻译： 参考电压提供电路可以包括内部参考电压产生单元，其被配置为产生内部参考电压，被配置为接收外部参考电压的焊盘，选择性地被配置为将内部参考电压或外部参考电压提供给内部参考电压的开关单元 电压发生器处于测试模式。

公开(公告)号：US07995408B2

公开(公告)日：2011-08-09

申请号：US12169591

申请日：2008-07-08

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G11C29/00

CPC分类号： G11C5/147

摘要： A reference voltage supplying circuit can include an internal reference voltage generating unit configured to generate an internal reference voltage, a pad configured to receive an external reference voltage, a switching unit selectively configured to supply the internal reference voltage or the external reference voltage to an internal voltage generator in a test mode.

摘要翻译： 参考电压提供电路可以包括内部参考电压产生单元，其被配置为产生内部参考电压，被配置为接收外部参考电压的焊盘，选择性地被配置为将内部参考电压或外部参考电压提供给内部参考电压的开关单元 电压发生器处于测试模式。

公开(公告)号：US07978536B2

公开(公告)日：2011-07-12

申请号：US12217045

申请日：2008-06-30

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G11C5/14

CPC分类号： G11C11/4074 ,  G11C5/143 ,  G11C5/147 ,  G11C11/4072

摘要： Semiconductor memory device and method of operating the same includes an enable signal generator configured to generate first and second enable signals having activation timings determined in response to activation of an active command, the first enable signal being deactivated after a first time from a deactivation timing of the active command, and the second enable signal being deactivated after a second time longer than the first time from the deactivation timing of the active command. Internal voltage generators are configured to generate internal voltages. At least one of the internal voltage generators is turned on/off in response to the first enable signal, and at least one other of the internal voltage generators is turned on/off in response to the second enable signals.

摘要翻译： 半导体存储器件及其操作方法包括使能信号发生器，其被配置为产生具有响应于有效命令的激活而确定的激活定时的第一和第二使能信号，所述第一使能信号在第一次从停止定时 所述激活命令和所述第二使能信号在从所述激活命令的去激活定时开始的第二时间长于所述第一时间之后被去激活。 内部电压发生器配置为产生内部电压。 内部电压发生器中的至少一个响应于第一使能信号而导通/截止，并且内部电压发生器中的至少一个响应于第二使能信号而导通/截止。

公开(公告)号：US07969797B2

公开(公告)日：2011-06-28

申请号：US12266504

申请日：2008-11-06

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G11C5/14

CPC分类号： G11C5/147 ,  G11C5/143 ,  G11C11/4074

摘要： A semiconductor memory device includes a voltage detector configured to detect a level of an external power supply voltage and an internal voltage generator configured to generate an internal voltage in response to an active signal and drive an internal voltage terminal with a driving ability corresponding to an output signal of the voltage detector. A method for operating the semiconductor memory device includes detecting a level of an external power supply voltage, based on a first target level, to output a detection signal; and generating an internal voltage in response to an active signal, and driving an internal voltage terminal with a driving ability corresponding to the detection signal.

摘要翻译： 半导体存储器件包括：电压检测器，被配置为检测外部电源电压的电平;以及内部电压发生器，其被配置为响应于有源信号产生内部电压，并且驱动具有对应于输出的驱动能力的内部电压端子 电压检测器的信号。 一种用于操作半导体存储器件的方法包括：基于第一目标电平检测外部电源电压的电平，以输出检测信号; 以及响应于有效信号产生内部电压，并且驱动具有与检测信号相对应的驱动能力的内部电压端子。

公开(公告)号：US20100244854A1

公开(公告)日：2010-09-30

申请号：US12495143

申请日：2009-06-30

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G01R31/28

CPC分类号： G01R31/2884 ,  G01R31/2889 ,  G01R31/31926

摘要： A semiconductor device includes a common probing pad; an internal voltage generation unit having a plurality of internal voltage generation blocks configured to generate a plurality of internal voltages; and a probing voltage selection unit configured to transfer an internal voltage selected from the internal voltages to the common probing pad in response to a plurality of voltage selection signals.

摘要翻译： 一种半导体器件包括一个通用探测器; 内部电压产生单元，具有被配置为产生多个内部电压的多个内部电压产生块; 以及探测电压选择单元，被配置为响应于多个电压选择信号将从内部电压选择的内部电压传送到公共探测焊盘。