摘要:
A polylactic acid based film includes a composition containing a polylactic acid based resin (A), a thermoplastic resin other than polylactic acid based resin (B), and a compound treated with a surface treatment agent as filler (C), the polylactic acid based resin containing a crystalline polylactic acid based resin and an amorphous polylactic acid based resin, and resin (A) accounting for 10 to 95 mass % and resin (B) accounting for 5 to 90 mass % of a combined total of 100 mass % of resin (A) and resin (B), and filler (C) accounting for 10 to 400 parts by mass per a combined total of 100 parts by mass of resin (A) and resin (B).
摘要:
A polylactic acid based film includes a composition containing a polylactic acid based resin (A), a thermoplastic resin other than polylactic acid based resin (B), and a compound treated with a surface treatment agent as filler (C), the polylactic acid based resin containing a crystalline polylactic acid based resin and an amorphous polylactic acid based resin, and resin (A) accounting for 10 to 95 mass % and resin (B) accounting for 5 to 90 mass % of a combined total of 100 mass % of resin (A) and resin (B), and filler (C) accounting for 10 to 400 parts by mass per a combined total of 100 parts by mass of resin (A) and resin (B).
摘要:
Provided is a solid-state imaging device being capable of suppressing RTS noise and preventing decrease in S/N when a signal having a smaller value is converted to a digital signal. The solid-state imaging device includes: an imaging unit including pixels arranged in rows and columns; column amplifying units each amplifying a column signal with a variable gain, each of the column amplifying units being provided for each column of the imaging unit; column sample-hold units each selectively sample-holding and passing the column signal, the column signal being amplified by a corresponding one of the column amplifying units; and column AD conversion units each converting, using a ramp signal, the column signal representing a signal component and a reference component to a digital signal corresponding to a difference between the signal component and the reference component, the column signal being read from a corresponding one of said column sample-hold units.
摘要:
The solid-state imaging device according to the present invention includes: pixel units arranged two-dimensionally in rows and columns; signal holding units each holding an analog signal outputted from one of the pixel units in a corresponding one of the columns; and column AD circuits each converting, into a digital signal, the analog signal held by a corresponding one of said signal holding units. The signal holding units and the column AD circuits are respectively provided for the columns of the pixel units. Each of the signal holding units includes: a switching element connected to a column signal line through which the analog signal outputted from the one of the pixel units is transmitted; and a capacitor element holding the analog signal and being connected to the column signal line through the switching element.
摘要:
The solid-state imaging device includes: a first node for receiving a first signal from outside the solid-state imaging device; a second node for receiving a second signal from outside the solid-state imaging device; a test signal selection circuit for outputting the first signal received at the first node and the second signal received at the second node as a test signal by switching between the first and second signals at desired timing; and a test signal input circuit for supplying the test signal from the test signal selection circuit to an input of the A/D converter.
摘要:
A solid state imaging device includes a plurality of pixels arranged in a matrix, a plurality of vertical signal lines VL arranged to correspond to columns of the pixels, respectively, such that each of them is connected to the pixels in each column and a column amplifier including a plurality of amplifiers AP. Each of the amplifiers AP includes a current source MOS transistor T1, an amplifying MOS transistor T2 for amplifying an image signal and a cascode MOS transistor T3 which is cascode-connected to the amplifying MOS transistor and outputs an amplified image signal between the cascode MOS transistor T3 and the current source MOS transistor T1. Gate terminals of the cascode MOS transistors T3 of the amplifiers AP are connected to each other.