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公开(公告)号：US20110205510A1
公开(公告)日：2011-08-25
申请号：US13012386
申请日：2011-01-24
IPC分类号： G03B27/42
CPC分类号： G03F7/70633 , G03F7/705 , G03F7/70516 , G03F7/70525
摘要： A lithographic exposure process is performed on a substrate using a scanner. The scanner comprises several subsystems. There are errors in the overlay arising from the subsystems during the exposure. The overlay errors are measured using a scatterometer to obtain overlay measurements. Modeling is performed to separately determine from the overlay measurements different subsets of estimated model parameters, for example field distortion model parameters, scan/step direction model parameters and position/deformation model parameters. Each subset is related to overlay errors arising from a corresponding specific subsystem of the lithographic apparatus. Finally, the exposure is controlled in the scanner by controlling a specific subsystem of the scanner using its corresponding subset of estimated model parameters. This results in a product wafer being exposed with a well controlled overlay.
摘要翻译： 使用扫描仪在基板上进行光刻曝光处理。 扫描仪包括几个子系统。 暴露过程中子系统产生的覆盖错误。 使用散射仪测量覆盖误差以获得覆盖测量。 执行建模以从覆盖测量单独确定估计模型参数的不同子集，例如场失真模型参数，扫描/步进方向模型参数和位置/变形模型参数。 每个子集与由光刻设备的相应特定子系统产生的叠加误差有关。 最后，通过使用其对应的估计模型参数子集来控制扫描仪的特定子系统，在扫描仪中控制曝光。 这导致用良好控制的覆盖物暴露产品晶片。
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32.发明授权Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device 有权用于预测基板的热诱导变形的方法和装置以及半导体装置公开(公告)号：US07710539B2
公开(公告)日：2010-05-04
申请号：US12257604
申请日：2008-10-24
CPC分类号： G03F7/70633 , G03F7/70341 , G03F7/70425 , G03F7/70783 , G03F7/70875
摘要： The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
摘要翻译： 本发明提供了一种用于校正光刻曝光的基底的热诱导场变形的方法。 首先，提供模型来预测衬底的多个场的热诱导场变形信息。 然后基于由模型预测的热诱导变形信息来修改用于配置场的曝光的预定曝光信息。 最后，根据修改的预先指定的曝光信息，将图案暴露在场上。 通过模型预测热诱导场变形信息包括预测基底上选定点的变形效应。 它是基于时间衰减的特性，因为能量被传送到基板上; 以及所选择的点与衬底的边缘之间的距离。
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33.发明申请公开(公告)号：US20050136346A1
公开(公告)日：2005-06-23
申请号：US10743272
申请日：2003-12-23
申请人： Joost Ottens , Harmen Van Der Schoot , Jeroen Starreveld , Wouterus Petrus Maria Maas , Willem Venema , Boris Menchtchikov
发明人： Joost Ottens , Harmen Van Der Schoot , Jeroen Starreveld , Wouterus Petrus Maria Maas , Willem Venema , Boris Menchtchikov
IPC分类号： G03F9/00 , G03F7/20 , H01L21/027 , G03B27/00 , G03C5/00
CPC分类号： G03F7/70616 , G03F7/70783 , G03F7/70875
摘要： A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.
摘要翻译： 本文介绍了一种校正光刻曝光的基底的热诱导场变形的方法和装置。 在一个实施例中，该方法包括根据预先指定的曝光信息将图案曝光到基板的多个场上，并测量场的属性以评估由曝光过程的热效应引起的场的变形。 该方法还包括基于所测量的属性来确定校正信息，并且基于校正信息调整预定曝光信息，以补偿热诱导的场变形。 其他实施例包括使用预测模型来预测对场的热诱导效应和热成像以确定跨越衬底的温度变化。
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34.发明授权Lithographic apparatus and method controlling parameter drift by performing multiple patterning passes on reference substrate 有权光刻设备和方法通过在参考基板上进行多次图案化，来控制参数漂移公开(公告)号：US08947643B2
公开(公告)日：2015-02-03
申请号：US13010409
申请日：2011-01-20
CPC分类号： G03F7/70516 , G03F7/70616
摘要： A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer, thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus to perform multiple exposure passes on each of the monitor wafer(s). An associated lithographic apparatus is also disclosed.
摘要翻译： 一种方法产生用于光刻设备的至少一个监视晶片。 监视器晶片与扫描控制模块组合使用，以周期性地从监视器晶片检索限定基线的测量值，从而确定从基准线的参数漂移。 在这样做时，可以对漂移进行津贴和/或修正。 通过使用光刻设备最初暴露监视器晶片以在每个监视器晶片上执行多次曝光确定来确定基线。 还公开了相关的光刻设备。
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公开(公告)号：US08793099B2
公开(公告)日：2014-07-29
申请号：US13018868
申请日：2011-02-01
CPC分类号： G03F7/70633 , G03F7/70516
摘要： System parameters are checked through self-assessment of a production wafer without a reference or a monitor wafer. In particular, exposure errors and substrate table positioning errors can be corrected for.
摘要翻译： 系统参数通过对生产晶片的自我评估进行检查，无需参考或监视晶片。 特别地，可以校正曝光误差和衬底台定位误差。
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公开(公告)号：US08687167B2
公开(公告)日：2014-04-01
申请号：US13009232
申请日：2011-01-19
CPC分类号： G03F7/70616 , G03F7/70516 , G03F7/70525 , G03F9/7003 , G03F9/7011 , G03F9/7019 , G03F9/7046
摘要： A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.
摘要翻译： 方法控制光刻设备的扫描功能。 使用第一对齐策略。 暴露监视器晶片以确定与扫描功能有关的基线控制参数。 从监视器晶片周期性地检索基线控制参数。 参数漂移由基线控制参数决定。 根据确定采取纠正措施。 使用与第一对准策略不同的第二对准策略来曝光生产晶片。 校正动作被修改，以便基本上更接近如果在暴露监视器晶片时已经使用第二对准策略将会进行的校正。
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公开(公告)号：US20110205515A1
公开(公告)日：2011-08-25
申请号：US13017640
申请日：2011-01-31
IPC分类号： G03B27/54
CPC分类号： G03B27/53 , G03F7/70516
摘要： System parameters are checked through self-assessment of a production wafer without using a reference or a monitor wafer. In particular, the wafer is exposed at different orientations, the data from which provides for the calibration of system parameters.
摘要翻译： 通过生产晶片的自我评估来检查系统参数，而不使用参考或监视晶片。 特别地，晶片以不同的取向曝光，其中的数据提供了系统参数的校准。
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公开(公告)号：US20110205513A1
公开(公告)日：2011-08-25
申请号：US13010388
申请日：2011-01-20
IPC分类号： G03B27/54
CPC分类号： G03F7/70616 , G03F7/70516 , G03F9/7011 , G03F9/7019
摘要： A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus, such that the initial exposure is performed while using non-standard alignment model settings optimized for accuracy, such as those used for testing the apparatus. An associated lithographic apparatus is also disclosed.
摘要翻译： 一种方法产生用于光刻设备的至少一个监视晶片。 监视器晶片与扫描控制模块组合使用，以周期性地从监视器晶片检索定义基线的测量结果，从而确定基线的参数漂移。 在这样做时，可以对漂移进行津贴和/或修正。 通过使用光刻设备初始曝光监视器晶片来确定基线，使得在使用针对精度优化的非标准对准模型设置（例如用于测试设备的那些）时执行初始曝光。 还公开了相关的光刻设备。
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39.发明授权公开(公告)号：US07710538B2
公开(公告)日：2010-05-04
申请号：US12257544
申请日：2008-10-24
CPC分类号： G03F7/70633 , G03F7/70341 , G03F7/70425 , G03F7/70783 , G03F7/70875
摘要： The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
摘要翻译： 本发明提供了一种用于校正光刻曝光的基底的热诱导场变形的方法。 首先，提供模型来预测衬底的多个场的热诱导场变形信息。 然后基于由模型预测的热诱导变形信息来修改用于配置场的曝光的预定曝光信息。 最后，根据修改的预先指定的曝光信息，将图案暴露在场上。 通过模型预测热诱导场变形信息包括预测基底上选定点的变形效应。 它是基于时间衰减的特性，因为能量被传送到基板上; 以及所选择的点与衬底的边缘之间的距离。
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40.发明授权Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device 有权用于预测基板的热诱导变形的方法和装置以及半导体装置公开(公告)号：US07462430B2
公开(公告)日：2008-12-09
申请号：US11546551
申请日：2006-10-12
CPC分类号： G03F7/70633 , G03F7/70341 , G03F7/70425 , G03F7/70783 , G03F7/70875
摘要： The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
摘要翻译： 本发明提供了一种用于校正光刻曝光的基底的热诱导场变形的方法。 首先，提供模型来预测衬底的多个场的热诱导场变形信息。 然后基于由模型预测的热诱导变形信息来修改用于配置场的曝光的预定曝光信息。 最后，根据修改的预先指定的曝光信息，将图案暴露在场上。 通过模型预测热诱导场变形信息包括预测基底上选定点的变形效应。 它是基于时间衰减的特性，因为能量被传送到基板上; 以及所选择的点与衬底的边缘之间的距离。
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