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105 条记录 (耗时 0.038 秒)

    MEMORY DEVICE AND MEMORY
    32.
    发明申请
    MEMORY DEVICE AND MEMORY 有权
    存储器和存储器

    公开(公告)号：US20080225581A1

    公开(公告)日：2008-09-18

    申请号：US12014478

    申请日：2008-01-15

    申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： G11C11/14

    CPC分类号： G11C11/161 ,  G11C11/1659

    摘要： A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.

    摘要翻译： 提供存储器件。 存储器件包括存储层和固定磁化层。 存储层基于磁性材料的磁化状态保留信息。 通过由绝缘材料制成的中间层，在存储层上形成固定磁化层。 信息通过沿堆叠方向注入自旋极化电子而引起的存储层的磁化方向的变化记录在存储层上。 由存储层接收的有效去磁场的电平小于存储层的磁化饱和磁化水平。

    MEMORY
    33.
    发明申请
    MEMORY 审中-公开
    记忆

    公开(公告)号：US20070279972A1

    公开(公告)日：2007-12-06

    申请号：US11745925

    申请日：2007-05-08

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C11/155

    摘要： A memory including a memory element having a memory layer that retains information based on a magnetization state of a magnetic material, and a conductor electrically connected to the memory element is provided. In the memory, a magnetization pinned layer is provided for the memory layer through an intermediate layer, the intermediate layer is formed of an insulator, and spin-polarized electrons are injected in a stacking direction to invert a magnetization direction of the memory layer, so that information is recorded in the memory layer. The magnetic material is also provided for the conductor, so that a magnetic field with current flowing in the conductor is enhanced and a leakage magnetic field is applied to the memory layer to cause a deviation of the magnetization direction of the memory layer. Current in the stacking direction flows into the memory element through the conductor, so that spin-polarized electrons are injected.

    摘要翻译： 提供一种存储器，其包括具有基于磁性材料的磁化状态保持信息的存储器层的存储元件以及与存储元件电连接的导体。 在存储器中，通过中间层为存储层提供磁化钉扎层，中间层由绝缘体形成，并且自旋极化电子沿堆叠方向注入以反转存储层的磁化方向，因此 该信息被记录在存储器层中。 磁性材料也被提供给导体，使得在导体中流动的电流的磁场增强，并且泄漏磁场被施加到存储层以引起存储层的磁化方向的偏离。 层叠方向的电流通过导体流入存储元件，从而注入自旋极化电子。

    MEMORY ELEMENT AND MEMORY
    34.
    发明申请
    MEMORY ELEMENT AND MEMORY 有权
    记忆元素和记忆

    公开(公告)号：US20070263429A1

    公开(公告)日：2007-11-15

    申请号：US11745937

    申请日：2007-05-08

    申请人： Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A memory element including a memory layer that retains information based on a magnetization state of a magnetic material is provided. In the memory element, a magnetization pinned layer is provided for the memory layer through an intermediate layer, the intermediate layer is formed of an insulator, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the memory layer, so that information is recorded in the memory layer. Also, a ferromagnetic layer forming the memory layer has a magnetostriction constant of 1×10−5 or more.

    摘要翻译： 提供了包括基于磁性材料的磁化状态保持信息的存储层的存储元件。 在存储元件中，通过中间层为存储层提供磁化钉扎层，中间层由绝缘体形成，自旋极化电子沿堆叠方向注入以改变存储层的磁化方向，因此 该信息被记录在存储器层中。 此外，形成存储层的铁磁层具有1×10 -5以上的磁致伸缩常数。

    STORAGE ELEMENT AND MEMORY
    35.
    发明申请
    STORAGE ELEMENT AND MEMORY 审中-公开
    存储元素和存储器

    公开(公告)号：US20070133264A1

    公开(公告)日：2007-06-14

    申请号：US11565718

    申请日：2006-12-01

    申请人： Masanori Hosomi ,  Hiroshi Kano ,  Yutaka Higo ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hajime Yamagishi

    发明人： Masanori Hosomi ,  Hiroshi Kano ,  Yutaka Higo ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hajime Yamagishi

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A storage element includes a storage layer for holding information by use of a magnetization state of a magnetic material, with a pinned magnetization layer provided on one side of the storage layer, with an intermediate layer, to form a laminate film, and with the direction of magnetization of the storage layer being changed by passing a current in the lamination direction so as to record information in the storage layer, wherein the radius of curvature, R, at end portions of a major axis of a plan-view pattern of at least the storage layer, in the laminate film constituting the storage element, satisfies the condition, R≦100 nm.

    摘要翻译： 存储元件包括用于通过使用磁性材料的磁化状态保持信息的存储层，在存储层一侧设置有钉扎磁化层，并具有中间层，以形成层压膜，并且与方向 通过在层叠方向上通过电流来改变存储层的磁化强度，以便在存储层中记录信息，其中至少在平面图图案的长轴的端部处的曲率半径R 构成存储元件的层叠膜中的存储层满足条件R <= 100nm。

    Recording method for magnetic memory device
    38.
    发明授权
    Recording method for magnetic memory device 有权
    磁记录装置的记录方法

    公开(公告)号：US08169818B2

    公开(公告)日：2012-05-01

    申请号：US12937325

    申请日：2009-04-15

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： G11C11/00

    CPC分类号： H01L27/228 ,  G11C11/1675 ,  G11C11/1693 ,  H01L43/08 ,  Y10S977/935

    摘要： A recording method for a magnetic memory device that includes applying, when recording one piece of information, one or more main pulses and one or more sub-pulses in the same direction and applying the one or more sub-pulses after the one or more main pulses, the one or more main pulses each being a pulse that has a sufficient pulse height and pulse width to record information, the one or more sub-pulses each being a pulse that satisfies at least one of conditions that a pulse width is shorter than that of the one or more main pulses and that a pulse height is smaller than that of the one or more main pulses.

    摘要翻译： 一种用于磁存储器件的记录方法，包括：在记录一条信息时，在相同方向上应用一个或多个主脉冲和一个或多个子脉冲，并在所述一个或多个主脉冲之后施加所述一个或多个子脉冲 脉冲，所述一个或多个主脉冲各自是具有足够的脉冲高度和脉冲宽度以记录信息的脉冲，所述一个或多个子脉冲各自是满足脉冲宽度比脉冲宽度短的条件中的至少一个的脉冲 一个或多个主脉冲的脉冲高度和一个或多个主脉冲的脉冲高度小。

    RECORDING METHOD FOR MAGNETIC MEMORY DEVICE
    39.
    发明申请
    RECORDING METHOD FOR MAGNETIC MEMORY DEVICE 有权
    磁记忆装置记录方法

    公开(公告)号：US20110032744A1

    公开(公告)日：2011-02-10

    申请号：US12937325

    申请日：2009-04-15

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： G11C11/22

    CPC分类号： H01L27/228 ,  G11C11/1675 ,  G11C11/1693 ,  H01L43/08 ,  Y10S977/935

    摘要： [Object] To provide a recording method for a magnetic memory device including a recording layer that holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, the same level of error rate as in a case where a write pulse a little higher than the inversion threshold value is applied.[Solving Means] A recording method for a magnetic memory device includes applying, when recording one piece of information, one or more main pulses and one or more sub-pulses in the same direction and applying the one or more sub-pulses after the one or more main pulses, the one or more main pulses each being a pulse that has a sufficient pulse height and pulse width to record information, the one or more sub-pulses each being a pulse that satisfies at least one of conditions that a pulse width is shorter than that of the one or more main pulses and that a pulse height is smaller than that of the one or more main pulses.

    摘要翻译： 为了提供一种磁存储器件的记录方法，该磁存储器件包括一个保存作为磁体的磁化方向的信息的记录层和相对于记录层设置的具有绝缘层的磁化参考层， 通过经由绝缘层在记录层和磁化参考层之间流动的电流记录信息的磁存储器件，即使当施加显着高于反转阈值的写入脉冲时，该记录方法也能够保持相同 与施加写入脉冲比反转阈值稍高的情况一样的错误率级别。 解决方案一种用于磁存储器件的记录方法包括当在相同方向记录一条信息时，应用一个或多个主脉冲和一个或多个子脉冲，并在该一个信号之后施加一个或多个子脉冲 或更多个主脉冲，所述一个或多个主脉冲各自是具有足够的脉冲高度和脉冲宽度以记录信息的脉冲，所述一个或多个子脉冲各自是满足以下条件中的至少一个的脉冲：脉冲宽度 比一个或多个主脉冲短，并且脉冲高度小于一个或多个主脉冲的脉冲高度。

    Information storage element and method for driving the same
    40.
    发明授权
    Information storage element and method for driving the same 失效
    信息存储元件及其驱动方法

    公开(公告)号：US08248847B2

    公开(公告)日：2012-08-21

    申请号：US12908136

    申请日：2010-10-20

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi

    IPC分类号： G11C11/15

    CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    摘要： Disclosed herein is an information storage element including: a word electrode includes a first magnetic material that is continuously formed and is electrically conductive; a non-magnetic film formed in contact with the first magnetic material of the word electrode; a second magnetic material connected to the first magnetic material via the non-magnetic film; a magnetization setting mechanism disposed near at least one end part of both end parts of the word electrode and sets direction of magnetization of the end part of the word electrode; a coercivity decreasing mechanism decreases coercivity of the second magnetic material; and an electrically-conductive bit electrode so formed as to serve also as the second magnetic material or be formed in parallel to the second magnetic material, the bit electrode being so continuously formed as to intersect with the word electrode.

    摘要翻译： 本文公开了一种信息存储元件，包括：字电极，包括连续形成且导电的第一磁性材料; 形成为与字电极的第一磁性材料接触的非磁性膜; 经由非磁性膜连接到第一磁性材料的第二磁性材料; 磁化设置机构，设置在字电极的两端部的至少一个端部附近，并设置字电极的端部的磁化方向; 矫顽力降低机构降低第二磁性材料的矫顽力; 以及导电位电极，其形成为也用作第二磁性材料或与第二磁性材料平行地形成，位电极被连续地形成为与字电极相交。