公开(公告)号：US20070133264A1

公开(公告)日：2007-06-14

申请号：US11565718

申请日：2006-12-01

申请人： Masanori Hosomi ,  Hiroshi Kano ,  Yutaka Higo ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hajime Yamagishi

发明人： Masanori Hosomi ,  Hiroshi Kano ,  Yutaka Higo ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hajime Yamagishi

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A storage element includes a storage layer for holding information by use of a magnetization state of a magnetic material, with a pinned magnetization layer provided on one side of the storage layer, with an intermediate layer, to form a laminate film, and with the direction of magnetization of the storage layer being changed by passing a current in the lamination direction so as to record information in the storage layer, wherein the radius of curvature, R, at end portions of a major axis of a plan-view pattern of at least the storage layer, in the laminate film constituting the storage element, satisfies the condition, R≦100 nm.

摘要翻译： 存储元件包括用于通过使用磁性材料的磁化状态保持信息的存储层，在存储层一侧设置有钉扎磁化层，并具有中间层，以形成层压膜，并且与方向 通过在层叠方向上通过电流来改变存储层的磁化强度，以便在存储层中记录信息，其中至少在平面图图案的长轴的端部处的曲率半径R 构成存储元件的层叠膜中的存储层满足条件R <= 100nm。

公开(公告)号：US08437180B2

公开(公告)日：2013-05-07

申请号：US12795933

申请日：2010-06-08

申请人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

发明人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.

摘要翻译： 存储器包括：存储器件，其具有存储数据作为磁体的磁化状态的数据和磁化方向的磁化固定层，该磁化固定层通过介于存储层和磁化固定层之间的非磁性层固定，并存储 当存储层和磁化固定层的堆叠方向上流动的写入电流被施加时，通过改变存储层的磁化方向来改变存储层中的数据; 以及电压控制单元，其通过使用由两个或更多个独立脉冲串构成的写入电压将由两个或更多个独立脉冲串构成的写入电流提供给存储器件。

公开(公告)号：US08331136B2

公开(公告)日：2012-12-11

申请号：US12821886

申请日：2010-06-23

申请人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Hiroshi Kano ,  Minoru Ikarashi ,  Yuki Oishi ,  Shinichiro Kusunoki

发明人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Hiroshi Kano ,  Minoru Ikarashi ,  Yuki Oishi ,  Shinichiro Kusunoki

IPC分类号： G11C11/15

CPC分类号： G11C13/0007 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0076 ,  G11C2013/0078 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/79

摘要： A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.

摘要翻译： 一种非易失性存储器的记录方法，包括：电气地执行具有连接到用于信息记录的电源的电阻变化的信息存储装置的信息的记录的记录电路，包括以下步骤：以低电阻状态记录信息 在信息存储装置的记录电路的输出阻抗大于信息存储装置的低电阻状态下的电阻值的条件下，记录电路; 并且在信息存储装置的记录电路的输出阻抗小于信息存储装置的高电阻状态下的电阻值的条件下，通过记录电路将信息记录在高电阻状态。

公开(公告)号：US20100328998A1

公开(公告)日：2010-12-30

申请号：US12795933

申请日：2010-06-08

申请人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

发明人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.

摘要翻译： 存储器包括：存储器件，其具有存储数据作为磁体的磁化状态的数据和磁化方向的磁化固定层，该磁化固定层通过介于存储层和磁化固定层之间的非磁性层固定，并存储 当存储层和磁化固定层的堆叠方向上流动的写入电流被施加时，通过改变存储层的磁化方向来改变存储层中的数据; 以及电压控制单元，其通过使用由两个或更多个独立脉冲串构成的写入电压将由两个或更多个独立脉冲串构成的写入电流提供给存储器件。

公开(公告)号：US20100328992A1

公开(公告)日：2010-12-30

申请号：US12817327

申请日：2010-06-17

申请人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

发明人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/005 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C17/16 ,  G11C29/50 ,  G11C2029/4402 ,  Y10S977/935

摘要： A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

摘要翻译： 存储器包括：多个存储器件，每个存储器件包括隧道磁阻效应器件，其包含磁化方向可反转的磁化自由层，包括绝缘材料的隧道势垒层和与之相关的磁化固定层 经由具有固定的磁化方向的隧道势垒层到达磁化自由层; 使用存储装置的磁化自由层的磁化方向记录信息的随机存取存储区域; 以及根据存储器件的隧道势垒层的故障是否记录信息的只读存储区域。

公开(公告)号：US20100314673A1

公开(公告)日：2010-12-16

申请号：US12796802

申请日：2010-06-09

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

IPC分类号： H01L27/115

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3277 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.

摘要翻译： 存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体 层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间 第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。

公开(公告)号：US08575711B2

公开(公告)日：2013-11-05

申请号：US11564595

申请日：2006-11-29

申请人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L43/00

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

摘要翻译： 存储元件包括存储层，其被配置为通过使用磁性材料的磁化状态来保持信息，其中钉扎磁化层设置在存储层的一侧上，具有隧道绝缘层，并且随着磁化方向的磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。

公开(公告)号：US08194443B2

公开(公告)日：2012-06-05

申请号：US12796802

申请日：2010-06-09

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

IPC分类号： G11C11/14

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3277 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.

摘要翻译： 存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体 层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间 第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。

公开(公告)号：US20100328993A1

公开(公告)日：2010-12-30

申请号：US12821886

申请日：2010-06-23

申请人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Hiroshi Kano ,  Minoru Ikarashi ,  Yuki Oishi ,  Shinichiro Kusunoki

发明人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Hiroshi Kano ,  Minoru Ikarashi ,  Yuki Oishi ,  Shinichiro Kusunoki

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0076 ,  G11C2013/0078 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/79

摘要： A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.

摘要翻译： 一种非易失性存储器的记录方法，包括：电气地执行具有连接到用于信息记录的电源的电阻变化的信息存储装置的信息的记录的记录电路，包括以下步骤：以低电阻状态记录信息 在信息存储装置的记录电路的输出阻抗大于信息存储装置的低电阻状态下的电阻值的条件下，记录电路; 并且在信息存储装置的记录电路的输出阻抗小于信息存储装置的高电阻状态下的电阻值的条件下，通过记录电路将信息记录在高电阻状态。

公开(公告)号：US20080164547A1

公开(公告)日：2008-07-10

申请号：US11564595

申请日：2006-11-29

申请人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

摘要翻译： 存储元件包括存储层，其被配置为通过使用磁性材料的磁化状态来保持信息，其中钉扎磁化层设置在存储层的一侧上，具有隧道绝缘层，并且随着磁化方向的磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。