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公开(公告)号:US5463231A
公开(公告)日:1995-10-31
申请号:US353385
申请日:1994-12-02
申请人: Tsuneo Ogura , Kiminori Watanabe , Akio Nakagawa , Yoshihiro Yamaguchi , Norio Yasuhara , Tomoko Matsudai , Shigeru Hasegawa , Kazuya Nakayama
发明人: Tsuneo Ogura , Kiminori Watanabe , Akio Nakagawa , Yoshihiro Yamaguchi , Norio Yasuhara , Tomoko Matsudai , Shigeru Hasegawa , Kazuya Nakayama
IPC分类号: H01L27/06 , H01L29/74 , H01L29/745 , H01L29/749 , H01L31/111
CPC分类号: H01L27/0617 , H01L29/7436 , H01L29/7455 , H01L29/749
摘要: A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type emitter. The turn-off MOSFET has n-type drain and source layers formed in a p-type base layer, and a turn-off gate extending over the drain and source layers. The n-type drain layer is short-circuited with the p-type base layer via a drain electrode. The drain electrode is formed near an n-type emitter layer. When the thyristor is to be turned off, the first voltage is applied to the turn-on gate, and the second voltage is applied to the turn-off gate while the first voltage is applied to the turn-on gate. After the application of the second voltage continues for a predetermined period of time, the application of the first voltage to the turn-on gate is stopped. With this operation, the thyristor can be turned off even with a large current.
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公开(公告)号:US5381026A
公开(公告)日:1995-01-10
申请号:US760344
申请日:1991-09-16
申请人: Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
发明人: Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
IPC分类号: H01L29/423 , H01L29/745 , H01L29/749 , H01L27/08 , H01L29/74
CPC分类号: H01L29/7455 , H01L29/42308 , H01L29/749
摘要: Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.
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