Two-color grating coupled infrared photodetector
    31.
    发明授权
    Two-color grating coupled infrared photodetector 有权
    双色光栅耦合红外光电探测器

    公开(公告)号:US06452187B1

    公开(公告)日:2002-09-17

    申请号:US09645377

    申请日:2000-08-24

    CPC classification number: H01L31/109

    Abstract: A two-color photodetector for detecting two different bands of infrared radiation is described. The photodetector includes either a diffractive resonant optical cavity that resonates at the two colors of interest, or a diffractive resonant optical cavity that resonates at the first color and a vertical resonant optical cavity that resonates at the second color. By placing materials that absorb only one of the two colors at the appropriate locations within the resonate structure, the resultant signals include little cross-talk due to the opposite color. The two-color photodetector finds use in applications covering a wide portion of the infrared spectrum.

    Abstract translation: 描述了用于检测两个不同的红外辐射带的双色光电探测器。 光电检测器包括以感兴趣的两种颜色谐振的衍射谐振光学腔或者以第一颜色谐振的衍射谐振光学腔和以第二种颜色谐振的垂直共振光腔。 通过将仅吸收两种颜色之一的材料放置在谐振结构内的适当位置处,所得到的信号由于相反的颜色而包括很少的串扰。 双色光电探测器用于覆盖广泛部分红外光谱的应用中。

    Method of fabrication for mercury-based quaternary alloys of infrared
sensitive materials
    32.
    发明授权
    Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials 失效
    红外敏感材料汞基四元合金的制造方法

    公开(公告)号:US5998235A

    公开(公告)日:1999-12-07

    申请号:US882881

    申请日:1997-06-26

    Applicant: Pradip Mitra

    Inventor: Pradip Mitra

    CPC classification number: H01L31/1832 H01L31/0296

    Abstract: A variable bandgap infrared absorbing material, Hg.sub.1-x Cd.sub.x Te, is manufactured by use of the process termed MOCVD-IMP (Metalorganic Chemical Vapor Deposition-Interdifffused Multilayer Process). A substantial reduction in the dislocation defect density can be achieved through this method by use of CdZnTe layers which have a zinc mole fraction selected to produce a lattice constant which is substantially similar to the lattice constant of HgTe. After the multilayer pairs of HgTe and Cd.sub.0.944 Zn.sub.0.056 Te are produced by epitaxial growth, the structure is annealed to interdiffuse the alternating layers to produce a homogeneous alloy of mercury cadmium zinc telluride. The mole fraction x in Hg.sub.1-x (Cd.sub.0.944 Zn.sub.0.056).sub.x Te can be varied to produce a structure responsive to multiple wavelength bands of infrared radiation, but without changing the lattice constant. The alloy composition is varied by changing the relative thicknesses of HgTe and Cd.sub.0.944 Zn.sub.0.056 Te. A similar structure can also be fabricated using HgTe and lattice matched CdTe.sub.1-y Se.sub.y. Thus, a multi-band infrared absorbing material structure can be fabricated which has reduced dislocation defects, and thereby produce detectors with improved performance.

    Abstract translation: 可变带隙红外吸收材料Hg1-xCdxTe通过使用称为MOCVD-IMP(Metalorganic Chemical Vapor Deposition-Interdifffused Multayer Process)的方法制造。 通过这种方法可以通过使用选择锌摩尔分数的CdZnTe层来产生基本上类似于HgTe的晶格常数的晶格常数来实现位错缺陷密度的显着降低。 在通过外延生长生成多层对的HgTe和Cd0.944Zn0.056Te之后,将结构退火以相互扩散交替层以产生汞镉锌碲化物的均匀合金。 Hg1-x(Cd0.944Zn0.056)xTe中的摩尔分数x可以变化,以产生响应于红外辐射的多个波长带,但不改变晶格常数的结构。 通过改变HgTe和Cd0.944Zn0.556Te的相对厚度来改变合金组成。 也可以使用HgTe和晶格匹配的CdTe1-ySey制造类似的结构。 因此,可以制造具有减少的位错缺陷的多频带红外线吸收材料结构,从而产生具有改进性能的检测器。

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