公开(公告)号：US20070023789A1

公开(公告)日：2007-02-01

申请号：US11192956

申请日：2005-07-29

申请人： Alexander Hoefler ,  James Burnett

发明人： Alexander Hoefler ,  James Burnett

IPC分类号： H01L29/80

CPC分类号： G11C8/16 ,  H01L27/105 ,  H01L27/1052 ,  Y10S257/903

摘要： A multiport memory cell (200, 300, 600) includes a first word line (WL1) coupled to a gate electrode of a first transistor (201, 301, 601). A second word line (WL2) is coupled to a gate electrode of a second transistor (202, 302, 602). Importantly, the memory cell (200, 300, 600) includes a conductive path (215, 315) between an electrically floating body (426) of the first transistor (201) and an electrically floating body (426) of the second transistor (202). The first word line (WL1) may overlie a first portion of a common body (426) and the second word line (WL2) may overlie a second portion of the common body (426). The common body (426) may be positioned vertically between a buried oxide layer (427) and a gate dielectric layer (430) and laterally between first and second source/drain regions (401, 407) formed in a semiconductor layer (425). The cell (200, 300, 600) may include a third transistor (603) including a third word line (613) where the shared transistor body (610) is shared with the third transistor (603) and wherein the conductive path is connected to the third transistor (603).

公开(公告)号：US20060186457A1

公开(公告)日：2006-08-24

申请号：US11061005

申请日：2005-02-18

申请人： James Burnett ,  Ramachandran Muralidhar

发明人： James Burnett ,  Ramachandran Muralidhar

IPC分类号： H01L29/788

CPC分类号： H01L21/26586 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/1083 ,  H01L29/7881

摘要： A technique to speed up the programming of a non-volatile memory device that has a floating body actively removes holes from the floating body that have accumulated after performing hot carrier injection (HCI). The steps of HCI and active hole removal can be alternated until the programming is complete. The active hole removal is faster than passively allowing holes to be removed, which can take milliseconds. The active hole removal can be achieved by reducing the drain voltage to a negative voltage and reducing the gate voltage as well. This results in directly withdrawing the holes from the floating body to the drain. Alternatively, reducing the drain voltage while maintaining current flow stops impact ionization while sub channel current collects the holes. Further alternatively, applying a negative gate voltage causes electrons generated by band to band tunneling and impact ionization near the drain to recombine with holes.

摘要翻译： 一种用于加速具有浮体的非易失性存储装置的编程的技术主动地从执行热载流子注入（HCI）之后累积的浮体中去除空穴。 HCI和有源孔去除的步骤可以交替，直到编程完成。 有源孔移除比被动地更快地允许孔被去除，这可能需要几毫秒。 有源孔去除可以通过将漏极电压降低到负电压并降低栅极电压来实现。 这导致从浮体直接排出孔到排水管。 或者，在保持电流的同时降低漏极电压停止冲击电离，而子通道电流收集孔。 或者，施加负栅极电压使得通过带状隧穿产生的电子和靠近漏极的冲击电离与空穴重新组合。

公开(公告)号：US20060046406A1

公开(公告)日：2006-03-02

申请号：US10930892

申请日：2004-08-31

申请人： Gowrishankar Chindalore ,  James Burnett ,  Craig Swift ,  Ramachandran Muralidhar

发明人： Gowrishankar Chindalore ,  James Burnett ,  Craig Swift ,  Ramachandran Muralidhar

IPC分类号： H01L21/336

CPC分类号： H01L29/66825 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/66833 ,  H01L29/7881

摘要： A non-volatile memory (NVM) has a silicon germanium (SiGe) drain and a silicon carbon (SiC) source. The source being SiC provides for a stress on the channel that improves N channel mobility. The SiC also has a larger bandgap than the substrate, which is silicon. This results in it being more difficult to generate electron/hole pairs by impact ionization. Thus, it can be advantageous to use the SiC region for the drain during a read. The SiGe is used as the drain for programming and erase. The SiGe, having a smaller bandgap than the silicon substrate results in improved programming by generating electron/hole pairs by impact ionization and improved erasing by generating electron hole/pairs by band-to-band tunneling, both at lower voltage levels.

摘要翻译： 非易失性存储器（NVM）具有硅锗（SiGe）漏极和硅碳（SiC）源。 作为SiC的源提供通道上的应力，其改善N沟道迁移率。 SiC也具有比衬底更大的带隙，这是硅。 这导致通过冲击电离产生电子/空穴对更困难。 因此，在读取期间使用SiC区域用于漏极是有利的。 SiGe用作编程和擦除的漏极。 具有比硅衬底更小的带隙的SiGe通过在较低电压电平下通过产生电子/空穴对的冲击电离和通过频带隧穿产生电子空穴/对来改善擦除来改善编程。

公开(公告)号：US5672362A

公开(公告)日：1997-09-30

申请号：US724043

申请日：1996-09-23

申请人： James Burnett

发明人： James Burnett

IPC分类号： A01N59/14

CPC分类号： A01N59/14

摘要： Dust mites are a pest that is present in most homes. Their fecal pellets are known to be a significant cause of allergies. A method for controlling dust mites includes providing a 5% disodium octaborate tetrahydrate (DOT) solution, and applying it to an infested surface, such as a carpet or bedding, with a hot water vacuum. The solution is applied evenly, and is partially extracted by the vacuum on the same stroke, so that the surface is left relatively dry. The application and extraction process also cleans the surface by removing dirt and a significant number of dust mites and their fecal pellets. The residual solution kills most of the dust mites, but it poses an insignificant health exposure to humans. After drying, the applied DOT also resists removal by subsequent dry vacuuming, so that it remains effective for many weeks.

摘要翻译： 尘螨是大多数家庭中存在的一种害虫。 他们的粪便颗粒已知是导致过敏的重要原因。 一种控制尘螨的方法包括提供5％的四硼酸二钠四水合物（DOT）溶液，并将其施加到感染的表面，例如地毯或床上用热水真空。 将溶液均匀地施加，并在相同的行程上通过真空部分地提取，使得表面相对干燥。 施用和提取过程还通过除去污垢和大量尘螨及其粪便颗粒来清洁表面。 残留的溶液会杀死大多数尘螨，但对人体的健康影响却很小。 干燥后，施加的DOT也可以通过随后的干抽真空来抵抗除去，使其在几周内保持有效。