公开(公告)号：US20070158764A1

公开(公告)日：2007-07-12

申请号：US11328594

申请日：2006-01-10

申请人： Marius Orlowski ,  James Burnett

发明人： Marius Orlowski ,  James Burnett

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/785 ,  H01L21/823431 ,  H01L29/66795

摘要： An electronic device can include an insulating layer and a fin-type transistor structure. The fin-type structure can have a semiconductor fin and a gate electrode spaced apart from each other. A dielectric layer and a spacer structure can lie between the semiconductor fin and the gate electrode. The semiconductor fin can include channel region including a portion associated with a relatively higher VT lying between a portion associated with a relatively lower VT and the insulating layer. In one embodiment, the supply voltage is lower than the relatively higher VT of the channel region. A process for forming the electronic device is also disclosed.

摘要翻译： 电子器件可以包括绝缘层和鳍型晶体管结构。 翅片型结构可以具有彼此间隔开的半导体翅片和栅电极。 电介质层和间隔结构可以位于半导体鳍片和栅电极之间。 半导体鳍片可以包括沟道区域，该沟道区域包括与相对较低V T T T相关的部分与绝缘层之间相对较高的V SUB相关联的部分。 在一个实施例中，电源电压低于沟道区的相对较高的V SUB。 还公开了一种用于形成电子器件的工艺。

公开(公告)号：US20070112049A1

公开(公告)日：2007-05-17

申请号：US11464007

申请日：2006-08-11

申请人： Sina Bavari ,  Rick Gussio ,  James Burnett

发明人： Sina Bavari ,  Rick Gussio ,  James Burnett

IPC分类号： A61K31/427 ,  A61K31/423 ,  A61K31/4184

CPC分类号： A61K31/4184 ,  A61K31/423 ,  A61K31/427 ,  A61K31/428 ,  C07D209/10 ,  C07D209/12 ,  C07D209/14 ,  C07D333/56 ,  C07D333/60 ,  C07D401/06 ,  C07D401/12 ,  C07D403/04 ,  C07D405/06 ,  C07D405/14 ,  C07D407/06 ,  C07D409/04 ,  Y02A50/406 ,  Y02A50/473

摘要： Disclosed herein are methods of inhibiting the activity of Botulinum neurotoxin A metalloprotease with the compounds disclosed herein. Also disclosed are methods of treating, inhibiting or preventing intoxication caused by bacteria of at least one bacterial strain in a subject, and pharmaceutical and cosmetic compositions comprising the compounds disclosed herein.

摘要翻译： 本文公开的是使用本文公开的化合物抑制肉毒杆菌神经毒素A金属蛋白酶的活性的方法。 还公开了治疗，抑制或预防受试者中至少一种细菌菌株的细菌引起的中毒的方法，以及包含本文公开的化合物的药物和化妆品组合物。

公开(公告)号：US20050156229A1

公开(公告)日：2005-07-21

申请号：US11014661

申请日：2004-12-16

申请人： Geoffrey Yeap ,  Srinivas Jallepalli ,  Yongjoo Jeon ,  James Burnett ,  Rana Singh ,  Paul Grudowski

发明人： Geoffrey Yeap ,  Srinivas Jallepalli ,  Yongjoo Jeon ,  James Burnett ,  Rana Singh ,  Paul Grudowski

IPC分类号： H01L21/336 ,  H01L21/8239 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11541 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7833

摘要： A semiconductor device has recesses formed in the substrate during removal of the anti-reflective coating (ARC) because these recess locations are exposed during the etching of the ARC. Although the etchant is chosen to be selective between the ARC material and the substrate material, this selectivity is limited so that recesses do occur. A problem associated with the formation of these recesses is that the source/drains have further to diffuse to become overlapped with the gate. The result is that the transistors may have reduced current drive. The problem is avoided by waiting to perform the ARC removal until at least after formation of a sidewall spacer around the gate. The consequent recess formation thus occurs further from the gate, which results in reducing or eliminating the impediment this recess can cause to the source/drain diffusion that desirably extends to overlap with the gate.

公开(公告)号：US20050153945A1

公开(公告)日：2005-07-14

申请号：US10935622

申请日：2004-09-08

申请人： Sina Bavari ,  James Schmidt ,  James Burnett ,  Rick Gussio

发明人： Sina Bavari ,  James Schmidt ,  James Burnett ,  Rick Gussio

IPC分类号： A61K31/4709 ,  A61K31/473 ,  A61K31/555 ,  A61K31/63 ,  C07K20060101 ,  G01N33/48 ,  G01N33/50 ,  G01N33/53 ,  G06F19/00

CPC分类号： A61K31/635 ,  A61K31/47 ,  A61K31/4706 ,  A61K45/06 ,  G06F19/705 ,  G06F19/706 ,  A61K2300/00

摘要： Disclosed herein is a pharmacophore model for inhibiting Botulinum neurotoxin A metalloprotease activity which comprises a first plane A, a second plane B, a first hydrophobic moiety C, a second hydrophobic moiety D and a positive ionizable substituent E. The pharmacophore model may further comprise a heteroatom in the first plane A. In some embodiments, the distance between the center of the first plane A and the center of the second plane B is about 6.5 to about 9.5 Å. In some embodiments, the distance between the center of the first hydrophobic moiety C and the center of the second hydrophobic moiety D is about 8.0 to about 16.0 Å. In some embodiments, the distance between the center of the first plane to the center of the first hydrophobic moiety C is about 3.0 to about 5.0 Å. In some embodiments, the distance between the center of the second plane to the center of the second hydrophobic moiety C is about 3.0 to about 5.0 Å. In some embodiments, the distance between the center of the first plane to the center of the positive ionizable substituent is about 6.5 to about 9.5 Å.

摘要翻译： 本文公开了用于抑制肉毒杆菌神经毒素A金属蛋白酶活性的药效团模型，其包含第一平面A，第二平面B，第一疏水部分C，第二疏水部分D和可阳离子化取代基E.药效基团模型还可包含 在一些实施例中，第一平面A的中心与第二平面B的中心之间的距离为约6.5至约9.5。 在一些实施方案中，第一疏水部分C的中心与第二疏水部分D的中心之间的距离为约8.0至约16.0。 在一些实施方案中，第一平面的中心与第一疏水部分C的中心之间的距离为约3.0至约5.0。 在一些实施方案中，第二平面的中心与第二疏水部分C的中心之间的距离为约3.0至约5.0。 在一些实施方案中，第一平面的中心与正电离取代基的中心之间的距离为约6.5至约9.5。

公开(公告)号：US06312535B1

公开(公告)日：2001-11-06

申请号：US09535685

申请日：2000-03-27

申请人： Alan George Leatham ,  Jeffrey Stuart Coombs ,  James Burnett Forrest ,  Andrew Josef Widawski Ogilvy ,  Robert Ross ,  Luis Gerardo Elias

发明人： Alan George Leatham ,  Jeffrey Stuart Coombs ,  James Burnett Forrest ,  Andrew Josef Widawski Ogilvy ,  Robert Ross ,  Luis Gerardo Elias

IPC分类号： C22C2800

CPC分类号： C22C1/1042 ,  B22F3/115 ,  C22C1/04 ,  C22C25/00 ,  C22C32/0063 ,  H01L23/06 ,  H01L23/142 ,  H01L2924/0002 ,  H01L2924/01079 ,  Y10T428/12486 ,  H01L2924/00

摘要： A method of producing a silicon based alloy is described which comprises melting a silicon alloy containing greater than 50 wt. % silicon and preferably including aluminium. The melted alloy is then inert gas atomized to produce powder or a spray formed deposit in which the silicon forms a substantially continuous phase made up of fine, randomly oriented crystals in the microstructure. The alloy produced by the method has particularly useful application in electronics packaging materials and a typical example comprises an alloy of 70 wt. % silicon and 30 wt. % aluminium. Such an alloy is an engineering material which, for example, is machinable.

摘要翻译： 描述了一种制造硅基合金的方法，其包括熔化含有大于50wt。 ％硅，优选包括铝。 然后熔化的合金被惰性气体雾化以产生粉末或喷雾形成的沉积物，其中硅形成基本上连续的相，其由微观结构中精细的随机取向的晶体组成。 通过该方法生产的合金在电子封装材料中具有特别有用的应用，典型的实例包括一种70wt。 ％硅和30wt。 ％铝。 这种合金是例如可加工的工程材料。

公开(公告)号：US20110281551A1

公开(公告)日：2011-11-17

申请号：US12777708

申请日：2010-05-11

申请人： Lizbet Gonzalez ,  Leonard James Burnett ,  Todd D. Carlton ,  William B. Chandler, JR. ,  Raymond A. McFarland, JR.

发明人： Lizbet Gonzalez ,  Leonard James Burnett ,  Todd D. Carlton ,  William B. Chandler, JR. ,  Raymond A. McFarland, JR.

IPC分类号： H04M11/00

CPC分类号： H04W4/24 ,  H04M15/00 ,  H04M15/62 ,  H04M15/75 ,  H04M15/751 ,  H04M15/752 ,  H04M15/755 ,  H04M15/7556 ,  H04M17/10 ,  H04M17/20

摘要： Systems, methods, and computer program products use combinations of international mobile equipment identity (IMEI), international mobile subscriber identity (IMSI), and account information to determine if a customer is eligible for service credit in near real-time. The customer needs an active account prior to inserting a subscriber identity module (SIM) into a device and powering on the device for the system to determine credit eligibility. No further customer action is required. The credit application process determines credit eligibility based upon device credit eligibility, account tenure, and/or credit rules, and applies the credit to the customer's account. The customer may be proactively notified when the credit is applied. The credit and tenure rules may be changed as the industry and business needs change to remain competitive in the industry. The SIM used is configured with software to lock the SIM to the device upon first power-on.

摘要翻译： 系统，方法和计算机程序产品使用国际移动设备身份（IMEI），国际移动用户身份（IMSI）和帐户信息的组合来确定客户是否有资格接近实时的服务信用。 在将用户身份模块（SIM）插入到设备中并为系统启动设备以确定信用资格之前，客户需要一个活动帐户。 不需要进一步的客户行动。 信用申请程序根据设备信用资格，账户使用权和/或信用规则确定信用资格，并将信用额度应用于客户的账户。 信用证申请时可以主动通知客户。 随着行业和业务需求的变化，信贷和使用权制度可能会发生变化，以保持行业的竞争力。 所使用的SIM卡配置有软件，以便在首次上电时将SIM卡锁定到设备上。

公开(公告)号：US20070211526A1

公开(公告)日：2007-09-13

申请号：US11373532

申请日：2006-03-10

申请人： James Burnett

发明人： James Burnett

IPC分类号： G11C11/34 ,  G11C11/00

CPC分类号： G11C11/413 ,  G11C7/02 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/66795 ,  H01L29/785

摘要： A device is disclosed having a first Field Effect Transistor having a channel region controlled by a gate, a second Field Effect Transistor having a first channel region substantially controlled by a first gate, and a second channel region substantially controlled by a second gate. The gate of the first Field Effect Transistor and the first gate of the second Field Effect Transistor are coupled to a memory write line. The second gate of the second Field Effect Transistor receives a control signal from a memory bit cell.

摘要翻译： 公开了一种具有第一场效应晶体管的器件，其具有由栅极控制的沟道区域，第二场效应晶体管具有基本由第一栅极控制的第一沟道区域和由第二栅极基本控制的第二沟道区域。 第一场效应晶体管的栅极和第二场效应晶体管的第一栅极耦合到存储器写入线。 第二场效应晶体管的第二栅极从存储器位单元接收控制信号。

公开(公告)号：US20070093054A1

公开(公告)日：2007-04-26

申请号：US11257972

申请日：2005-10-25

申请人： Byoung Min ,  James Burnett ,  Leo Mathew

发明人： Byoung Min ,  James Burnett ,  Leo Mathew

IPC分类号： H01L21/4763 ,  H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L27/1104 ,  H01L21/823431 ,  H01L27/11 ,  H01L29/66795 ,  H01L29/785

摘要： A method for making a semiconductor device is provided. The method includes forming a first transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region. The method further includes forming a second transistor with a vertical active region. The method further includes forming a third transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括形成具有在垂直有源区两侧延伸的垂直有源区和水平有源区的第一晶体管。 该方法还包括形成具有垂直有源区的第二晶体管。 该方法还包括形成具有垂直有源区和仅在垂直有源区的一侧上延伸的水平有源区的第三晶体管。

公开(公告)号：US20070089662A1

公开(公告)日：2007-04-26

申请号：US11538288

申请日：2006-10-03

申请人： James Burnett

发明人： James Burnett

IPC分类号： B63B3/00

CPC分类号： B63B3/16 ,  B63B9/04

摘要： A stainless-steel boat hull system and method. Exemplary embodiments include a method of maintaining steel-hulled boats, including accessing a steel boat hull, removing surface layers of the boat hull, identifying structurally supportive layers of the boat hull, priming the boat hull, attaching pre-selected stainless steel plates to the boat hull in an overlapped arrangement and connecting adjacent stainless steel plates.

摘要翻译： 不锈钢船体系统及方法。 示例性实施例包括维持钢船的方法，包括进入钢船体，移除船体的表面层，识别船体的结构上支撑层，起动船体，将预先选定的不锈钢板连接到 船体重叠布置并连接相邻的不锈钢板。

公开(公告)号：US20070057329A1

公开(公告)日：2007-03-15

申请号：US11222544

申请日：2005-09-09

申请人： Sinan Goktepeli ,  James Burnett

发明人： Sinan Goktepeli ,  James Burnett

IPC分类号： H01L21/8238 ,  H01L29/76

CPC分类号： H01L21/823814

摘要： A method for forming a semiconductor device is provided. The method includes forming a n-type well region. The method further includes forming a gate corresponding to the semiconductor device on top of the n-type well region. The method further includes forming a source-drain extension region on each side of the gate in the n-type well region using a p-type dopant. The method further includes doping the source-drain extension region on each side of the gate in the n-type well region using a n-type dopant such that the n-type dopant is substantially encompassed within the source-drain extension region. The method further includes forming a source and a drain corresponding to the semiconductor device.

摘要翻译： 提供一种形成半导体器件的方法。 该方法包括形成n型阱区域。 该方法还包括在n型阱区域的顶部上形成与半导体器件对应的栅极。 该方法还包括使用p型掺杂剂在n型阱区域中的栅极的每一侧上形成源极 - 漏极延伸区域。 该方法还包括使用n型掺杂剂在n型阱区域中的栅极的每侧上掺杂源极 - 漏极延伸区域，使得n型掺杂剂基本上包围在源极 - 漏极延伸区域内。 该方法还包括形成对应于半导体器件的源极和漏极。