METHOD FOR GENERATING POLLUTION CREDITS
    31.
    发明申请
    METHOD FOR GENERATING POLLUTION CREDITS 审中-公开
    产生污染信贷的方法

    公开(公告)号:US20100155652A1

    公开(公告)日:2010-06-24

    申请号:US12716092

    申请日:2010-03-02

    IPC分类号: C09K5/00

    摘要: A method for the development or generation of pollution credits by the substitution of lower global warming potential (GWP) mixtures of halogenated hydrocarbons or mixtures of halogenated hydrocarbons with CO2 for fluorocarbons or fluorocarbon-containing compositions of higher GWP, such as for perfluorocarbon compounds (PFC's), hydrofluorocarbon compounds (HFC's), chlorofluorocarbons (CFC's), hydrochlorofluorocarbon compounds (HCFC's), and compositions thereof, in compositions and processes employing the higher GWP compounds, and receive allocation of pollution credits for such substitution.

    摘要翻译: 通过将全球变暖潜能值(GWP)的卤代烃或卤代烃的混合物与二氧化碳替代碳氟化合物或含碳氟化合物的组合物(如全氟化碳化合物)(PFC)的发展或产生污染信贷的方法 ),氢氟碳化合物(HFC),氯氟烃(CFC),氢氯氟烃化合物(HCFC))及其组合物,以及使用更高GWP化合物的组合物和方法,并且获得用于这种替代的污染信贷分配。

    Method of etching using hydrofluorocarbon compounds
    34.
    发明授权
    Method of etching using hydrofluorocarbon compounds 失效
    使用氢氟烃化合物进行蚀刻的方法

    公开(公告)号:US06428716B1

    公开(公告)日:2002-08-06

    申请号:US09569910

    申请日:2000-05-11

    IPC分类号: G44C122

    摘要: A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula CXHCFZ wherein: x=3, 4 or 5; 2x≧z≧y; and y+z=2x+2; and further including an etching composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching.

    摘要翻译: 一种蚀刻方法,包括在等离子体蚀刻条件下对材料进行处理,所述蚀刻组合物至少包含具有式CXHCFZ的蚀刻剂化合物,并且还包括蚀刻组合物,其包含所述蚀刻剂化合物和不同于蚀刻剂化合物的第二材料,所述蚀刻组合物增强或 修改等离子体蚀刻。