Method of etching and cleaning using fluorinated carbonyl compounds
    2.
    发明授权
    Method of etching and cleaning using fluorinated carbonyl compounds 失效
    使用氟化羰基化合物进行蚀刻和清洗的方法

    公开(公告)号:US06635185B2

    公开(公告)日:2003-10-21

    申请号:US09001325

    申请日:1997-12-31

    IPC分类号: H01L213065

    摘要: A method comprising etching a material under plasma etching conditions using an etching composition which has a GWP of no greater than about 3000 and which comprises at least one etchant compound having a formula selected from the group consisting of F—CO—[(CR1R2)m—CO]n—F and F—CO—R3—CO—F, and wherein: m=0, 1, 2, 3, 4, or 5; n=1; R1 & R2 represent H, F or CxHyFz; wherein: x=1 or 2; and y+z=2x+1; R3 represents CR4═CR5, R6R7C═C or C≡C; wherein: R4-7 represent H, F, or CxHyFz; wherein: x=1 or 2; and y+z=2x+1; and also including the cleaning of a surface by use of an etchant compound, and further including an etching composition which includes said etchant compound and also an etchant-modifier.

    摘要翻译: 一种方法,包括使用GWP不大于约3000的蚀刻组合物在等离子体蚀刻条件下蚀刻材料,并且其包含至少一种具有选自F-CO - [(CR 1) > R 2)m-CO] n F和F-CO-R 3 -CO-F,并且其中:m = 0,1,2,3,4或5; n = 1; R 1 >&R <2>表示H,F或CxHyFz; 其中:x = 1或2; andy + z = 2x + 1; R 3表示CR 4 = CR 5,R 6 R 7 C = C或C = C; 其中:R 4-7表示H,F或CxHyFz; 其中:x = 1或2; andy + z = 2x + 1;并且还包括通过使用蚀刻剂化合物清洁表面,并且还包括包括所述蚀刻剂化合物和蚀刻剂改性剂的蚀刻组合物。

    Method of etching using hydrofluorocarbon compounds
    4.
    发明授权
    Method of etching using hydrofluorocarbon compounds 失效
    使用氢氟烃化合物进行蚀刻的方法

    公开(公告)号:US06428716B1

    公开(公告)日:2002-08-06

    申请号:US09569910

    申请日:2000-05-11

    IPC分类号: G44C122

    摘要: A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula CXHCFZ wherein: x=3, 4 or 5; 2x≧z≧y; and y+z=2x+2; and further including an etching composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching.

    摘要翻译: 一种蚀刻方法,包括在等离子体蚀刻条件下对材料进行处理,所述蚀刻组合物至少包含具有式CXHCFZ的蚀刻剂化合物,并且还包括蚀刻组合物,其包含所述蚀刻剂化合物和不同于蚀刻剂化合物的第二材料,所述蚀刻组合物增强或 修改等离子体蚀刻。

    Azeotrope-like compositions containing sulfur hexafluoride and uses thereof
    8.
    发明授权
    Azeotrope-like compositions containing sulfur hexafluoride and uses thereof 有权
    含有六氟化硫的类共沸组合物及其用途

    公开(公告)号:US07736529B2

    公开(公告)日:2010-06-15

    申请号:US11871729

    申请日:2007-10-12

    IPC分类号: C09K5/04 C23G5/028

    摘要: Provided are novel azeotrope-like compositions of SF6 and N2O, as well as methods of using the same. Also provided are methods of using SF6 compositions, including azeotrope-like compositions, including a method for suppressing an electric arc or corona discharge and a method for flame suppression. Further provided are electrical devices using such SF6 compositions as a dielectric insulating gas and rigid closed-cell foams having such SF6 compositions within the cells, wherein the foam is both thermally and electrically insulative.

    摘要翻译: 提供了SF6和N2O的新型类共沸组合物,以及使用它们的方法。 还提供了使用SF6组合物的方法,包括类共沸组合物,包括抑制电弧或电晕放电的方法和阻燃方法。 还提供了使用这种SF6组合物作为电介质绝缘气体的电气装置和在电池内具有这种SF 6组合物的刚性闭孔泡沫体,其中泡沫体是热和电绝缘的。

    HYDROGEN FLUORIDE COMPOSITIONS
    9.
    发明申请
    HYDROGEN FLUORIDE COMPOSITIONS 有权
    氢氟化合物

    公开(公告)号:US20090304571A1

    公开(公告)日:2009-12-10

    申请号:US12132741

    申请日:2008-06-04

    IPC分类号: C01B7/19 C08K3/00

    CPC分类号: C08K3/16

    摘要: The present invention provides compositions that are intimate mixtures of hydrogen fluoride and a polyacrylate-polyacrylamide cross-linked copolymer. The compositions of the invention are less hazardous and, therefore, more conveniently stored, transported, and handled in comparison to pure hydrogen fluoride. Further, the hydrogen fluoride may be readily recovered from the compositions of the invention for use.

    摘要翻译: 本发明提供了氟化氢和聚丙烯酸酯 - 聚丙烯酰胺交联共聚物的紧密混合物的组合物。 与纯氟化氢相比,本发明的组合物危险性较低,因此比较方便地储存,运输和处理。 此外,可以容易地从本发明的组合物中回收氟化氢以供使用。