公开(公告)号：US07625817B2

公开(公告)日：2009-12-01

申请号：US11325774

申请日：2005-12-30

申请人： Florian Gstrein ,  Valery M. Dubin ,  Juan E. Dominguez ,  Adrien R. Lavoie

发明人： Florian Gstrein ,  Valery M. Dubin ,  Juan E. Dominguez ,  Adrien R. Lavoie

IPC分类号： H01L21/4763

CPC分类号： H01L21/76877 ,  H01L21/76838 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/75 ,  H01L2924/00

摘要： A method including forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate. A method including forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles.

摘要翻译： 一种包括在牺牲衬底上形成单层碳纳米管的互连的方法; 将所述互连件从所述牺牲衬底转移到电路衬底; 以及将所述互连件耦合到所述电路基板上的接触点。 一种方法，包括在第一接触点和第二接触点之间的电路基板上形成纳米管束，所述纳米管限定通过其的腔; 用导电材料填充纳米管束管腔长度的一部分; 以及将所述导电材料耦合到所述第二接触点。 一种包括计算设备的系统，包括微处理器，微处理器耦合到印刷电路板，微处理器包括具有多个电路器件的衬底，该电路器件具有通过包括碳纳米管束的互连结构与多个电路器件形成的电连接。

公开(公告)号：US20080113508A1

公开(公告)日：2008-05-15

申请号：US11598889

申请日：2006-11-13

申请人： Rohan N. Akolkar ,  Florian Gstrein ,  Valery M. Dubin ,  Daniel J. Zierath

发明人： Rohan N. Akolkar ,  Florian Gstrein ,  Valery M. Dubin ,  Daniel J. Zierath

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877

摘要： Disclosed are embodiments of a method of forming metal interconnects using a sacrificial layer to protect a seed layer prior to metal gap fill. The sacrificial layer can prevent oxidation of the seed layer and perhaps oxygen migration to an underlying barrier layer. Other embodiments are described and claimed.

摘要翻译： 公开了在金属间隙填充之前使用牺牲层形成金属互连以保护种子层的方法的实施例。 牺牲层可以防止种子层的氧化和可能的氧迁移到下面的阻挡层。 描述和要求保护其他实施例。

公开(公告)号：US20070248794A1

公开(公告)日：2007-10-25

申请号：US11408745

申请日：2006-04-21

申请人： Florian Gstrein ,  James Blackwell ,  Amlan Majumdar ,  Valery Dubin

发明人： Florian Gstrein ,  James Blackwell ,  Amlan Majumdar ,  Valery Dubin

IPC分类号： B05D7/22 ,  C23C16/00 ,  B32B9/00 ,  B32B3/10

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  H01L23/49877 ,  H01L2924/0002 ,  Y10T428/24322 ,  H01L2924/00

摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include forming an opening in a substrate, placing at least one multi-walled CNT within the opening, and forming a carbide layer on the at least one multi-walled CNT.

摘要翻译： 描述形成微电子器件的方法和相关结构。 这些方法可以包括在基底中形成开口，将至少一个多壁CNT放置在开口内，以及在至少一个多壁CNT上形成碳化物层。

公开(公告)号：US20070155158A1

公开(公告)日：2007-07-05

申请号：US11325774

申请日：2005-12-30

申请人： Florian Gstrein ,  Valery Dubin ,  Juan Dominguez ,  Adrien Lavoie

发明人： Florian Gstrein ,  Valery Dubin ,  Juan Dominguez ,  Adrien Lavoie

IPC分类号： H01L21/4763

CPC分类号： H01L21/76877 ,  H01L21/76838 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/75 ,  H01L2924/00

摘要： A method including forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate. A method including forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles.

摘要翻译： 一种包括在牺牲衬底上形成单层碳纳米管的互连的方法; 将所述互连件从所述牺牲衬底转移到电路衬底; 以及将所述互连件耦合到所述电路基板上的接触点。 一种方法，包括在第一接触点和第二接触点之间的电路基板上形成纳米管束，所述纳米管限定通过其的腔; 用导电材料填充纳米管束管腔长度的一部分; 以及将所述导电材料耦合到所述第二接触点。 一种包括计算设备的系统，包括微处理器，微处理器耦合到印刷电路板，微处理器包括具有多个电路器件的衬底，该电路器件具有通过包括碳纳米管束的互连结构与多个电路器件形成的电连接。

公开(公告)号：US20060267051A1

公开(公告)日：2006-11-30

申请号：US11136585

申请日：2005-05-25

申请人： Florian Gstrein ,  Valery Dubin

发明人： Florian Gstrein ,  Valery Dubin

IPC分类号： H01L29/15

CPC分类号： G01N27/129

摘要： A metal oxide sensor is provided on a semiconductor substrate to provide on-chip sensing of gases. The sensor may include a metal layer that may have pores formed by lithography to be of a certain width. The top metal layer may be oxidized resulting in a narrowing of the pores. Another metal layer may be formed over the oxidized layer and electrical contacts may be formed on the metal layer. The contacts may be coupled to a monitoring system that receives electrical signals indicative of gases sensed by the metal oxide sensor.

摘要翻译： 金属氧化物传感器设置在半导体衬底上以提供对气体的片上感测。 传感器可以包括可以具有通过光刻形成的孔以具有一定宽度的金属层。 顶部金属层可能被氧化，导致孔变窄。 可以在氧化层之上形成另一金属层，并且可以在金属层上形成电接触。 触点可以耦合到监测系统，监测系统接收指示由金属氧化物传感器感测的气体的电信号。