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    BARRIERLESS SINGLE-PHASE INTERCONNECT
    2.
    发明申请
    BARRIERLESS SINGLE-PHASE INTERCONNECT 审中-公开
    无障碍单相互连

    公开(公告)号：US20120153483A1

    公开(公告)日：2012-06-21

    申请号：US12973281

    申请日：2010-12-20

    申请人： Rohan N. Akolkar ,  Florian Gstrein ,  Daniel J. Zierath

    发明人： Rohan N. Akolkar ,  Florian Gstrein ,  Daniel J. Zierath

    IPC分类号： H01L23/52 ,  H01L21/768

    CPC分类号： H01L23/53261 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53247 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming an interconnect structure and an integrated circuit including the interconnect structure. The method includes: depositing a dielectric layer over a conductive layer; forming an opening in the dielectric layer to expose the conductive layer; forming a barrierless single-phase interconnect comprising a metal or compound having a melting point between a melting point of copper and a melting point of tungsten. Forming includes depositing a layer of metal or compound within the opening and on an upper surface of the dielectric layer Preferably, the barrierless single-phase interconnect comprises cobalt or a cobalt containing compound. Thus, an interconnect structure, including a via and associated line, is made up of a single-phase metal or compound without the use of a different material between the interconnect and the underlying dielectric, thus improving electrical performance and reliability and further simplifying the interconnect formation process.

    摘要翻译： 形成互连结构的方法和包括所述互连结构的集成电路。 该方法包括：在导电层上沉积介电层; 在所述电介质层中形成开口以暴露所述导电层; 形成包含熔点在铜的熔点和钨的熔点之间的金属或化合物的无障碍单相互连。 形成包括在开口内和介电层的上表面上沉积一层金属或化合物。优选地，无障碍单相互连包括钴或含钴化合物。 因此，包括通孔和相关线路的互连结构由单相金属或化合物构成，而不需要在互连和下面的电介质之间使用不同的材料，从而改善电性能和可靠性并进一步简化互连 形成过程。

    Metal oxide sensors and method of forming
    3.
    发明授权
    Metal oxide sensors and method of forming 有权
    金属氧化物传感器及成型方法

    公开(公告)号：US07208327B2

    公开(公告)日：2007-04-24

    申请号：US11136585

    申请日：2005-05-25

    申请人： Florian Gstrein ,  Valery M. Dubin

    发明人： Florian Gstrein ,  Valery M. Dubin

    IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

    CPC分类号： G01N27/129

    摘要： A metal oxide sensor is provided on a semiconductor substrate to provide on-chip sensing of gases. The sensor may include a metal layer that may have pores formed by lithography to be of a certain width. The top metal layer may be oxidized resulting in a narrowing of the pores. Another metal layer may be formed over the oxidized layer and electrical contacts may be formed on the metal layer. The contacts may be coupled to a monitoring system that receives electrical signals indicative of gases sensed by the metal oxide sensor.

    摘要翻译： 金属氧化物传感器设置在半导体衬底上以提供对气体的片上感测。 传感器可以包括可以具有通过光刻形成的孔以具有一定宽度的金属层。 顶部金属层可能被氧化，导致孔变窄。 可以在氧化层之上形成另一金属层，并且可以在金属层上形成电接触。 触点可以耦合到监测系统，监测系统接收指示由金属氧化物传感器感测的气体的电信号。

    CARBON NANOTUBE INTERCONNECT STRUCTURES
    7.
    发明申请
    CARBON NANOTUBE INTERCONNECT STRUCTURES 审中-公开
    碳纳米管互连结构

    公开(公告)号：US20100022083A1

    公开(公告)日：2010-01-28

    申请号：US12548779

    申请日：2009-08-27

    申请人： Florian Gstrein ,  Valery M. Dubin ,  Juan E. Dominguez ,  Adrien R. Lavoie

    发明人： Florian Gstrein ,  Valery M. Dubin ,  Juan E. Dominguez ,  Adrien R. Lavoie

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76877 ,  H01L21/76838 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/75 ,  H01L2924/00

    摘要： A method including forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate. A method including forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles.

    摘要翻译： 一种包括在牺牲衬底上形成单层碳纳米管的互连的方法; 将所述互连件从所述牺牲衬底转移到电路衬底; 以及将所述互连件耦合到所述电路基板上的接触点。 一种方法，包括在第一接触点和第二接触点之间的电路基板上形成纳米管束，所述纳米管限定通过其的腔; 用导电材料填充纳米管束管腔长度的一部分; 以及将所述导电材料耦合到所述第二接触点。 一种包括计算设备的系统，包括微处理器，微处理器耦合到印刷电路板，微处理器包括具有多个电路器件的衬底，该电路器件具有通过包括碳纳米管束的互连结构与多个电路器件形成的电连接。

    Composite metal films and carbon nanotube fabrication
    10.
    发明授权
    Composite metal films and carbon nanotube fabrication 有权
    复合金属薄膜和碳纳米管制作

    公开(公告)号：US07635503B2

    公开(公告)日：2009-12-22

    申请号：US11359165

    申请日：2006-02-21

    申请人： Juan E. Dominguez ,  Valery M. Dubin ,  Florian Gstrein ,  Michael Goldstein

    发明人： Juan E. Dominguez ,  Valery M. Dubin ,  Florian Gstrein ,  Michael Goldstein

    IPC分类号： C23C16/00

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  Y10S977/742

    摘要： Embodiments of the present invention provide methods for the fabrication of carbon nanotubes using composite metal films. A composite metal film is fabricated to provide uniform catalytic sites to facilitate the uniform growth of carbon nanotubes. Further embodiments provide embedded nanoparticles for carbon nanotube fabrication. Embodiments of the invention are capable of maintaining the integrity of the catalytic sites at temperatures used in carbon nanotube fabrication processes, 600 to 1100° C.

    摘要翻译： 本发明的实施例提供了使用复合金属膜制造碳纳米管的方法。 制造复合金属膜以提供均匀的催化位点以促进碳纳米管的均匀生长。 另外的实施方案提供用于碳纳米管制造的嵌入式纳米颗粒。 本发明的实施方案能够在碳纳米管制造工艺中使用的温度下维持催化部位的完整性，其温度为600至1100℃