公开(公告)号：US09171617B1

公开(公告)日：2015-10-27

申请号：US14667993

申请日：2015-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Kook Park ,  Yeong-Taek Lee ,  Dae-Seok Byeon ,  Yong-Kyu Lee ,  Hyo-Jin Kwon

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0064 ,  G11C2013/0066 ,  G11C2013/0076 ,  G11C2013/0092

Abstract: A method of programming memory cells of a resistive memory device includes; applying a first current pulse to each of the plurality of memory cells; applying a second current pulse that increases by a first difference compared to the first current pulse to each of the plurality of memory cells to which the first current pulse is applied; and applying a third current pulse that increases by a second difference compared to the second current pulse to each of the plurality of memory cells to which the second current pulse is applied, wherein the first through third current pulses non-linearly increase, and the second difference is greater than the first difference.

Abstract translation: 一种编程电阻式存储器件的存储单元的方法包括： 对所述多个存储单元中的每一个施加第一电流脉冲; 将与第一电流脉冲相比增加第一差的第二电流脉冲施加到施加了第一电流脉冲的多个存储单元中的每一个; 以及将与所述第二电流脉冲相比增加第二差的第三电流脉冲施加到施加所述第二电流脉冲的所述多个存储单元中的每一个，其中所述第一至第三电流脉冲非线性增加，并且所述第二电流脉冲 差异大于第一个差异。