公开(公告)号：US20210012849A1

公开(公告)日：2021-01-14

申请号：US16795730

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungryun Kim ,  Yoonna Oh ,  Hohyun Shin ,  Jaeho Lee

IPC: G11C29/18 ,  G11C29/00 ,  G11C29/44 ,  G11C29/42

Abstract: A semiconductor memory device comprises a memory cell array including segments disposed at corresponding intersections of row and column blocks, each row block including dynamic memory cells coupled to word-lines and bit-lines, a row decoder that activates a first word-line of a first row block in response to a row address, determines whether the first row block is a master block based on a first fuse information and a second row block is mapped as a slave to the master block, activates a second word-line of the second row block, and outputs a row block information signal, and a column decoder accessing a portion of first memory cells coupled to the first word-line or a portion of second memory cells coupled to the second word-line based on a column address, the row block information signal and a second fuse information.

公开(公告)号：US09613687B2

公开(公告)日：2017-04-04

申请号：US14147063

申请日：2014-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungryun Kim ,  Sangyong Yoon

IPC: G11C11/56 ,  G11C16/34 ,  G11C16/04 ,  G11C29/02 ,  G06F11/10 ,  H01L27/11578 ,  H03M13/37

CPC classification number: G11C11/5642 ,  G06F11/1012 ,  G06F11/1048 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/349 ,  G11C29/028 ,  G11C2211/5644 ,  H01L27/11578 ,  H03M13/373

Abstract: In one embodiment, the method includes performing a read operation on a memory, and determining, by a memory controller, whether to perform a reliability verification read operation based on a count value and a reference value. The count value is based on a number of read commands issued by the memory controller to the memory, and the reliability verification read operation is for reading data from at least one memory cell associated with at least one unselected word line in the memory. An unselected word line is a word line not selected during the read operation. The method further includes performing the reliability verification read operation for the at least one unselected word line based on the determining.