公开(公告)号：US20210233589A1

公开(公告)日：2021-07-29

申请号：US17227820

申请日：2021-04-12

Applicant: SanDisk Technologies LLC

Inventor： Xiang Yang ,  Aaron Lee ,  Gerrit Jan Hemink ,  Ken Oowada ,  Toru Miwa

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/04 ,  G11C16/34 ,  G11C8/18 ,  G11C8/12

Abstract: Apparatuses, systems, and methods are disclosed for concurrently programming non-volatile storage cells, such as those of an SLC NAND array. The non-volatile storage cells may be arranged into a first block comprising a first string of storage cells that intersects with a first word line at a first storage cell, a second block comprising a second string of storage cells that intersects with a second word line at a second storage cell, a bit line electrically connectable to the first string and the second string, and controller configured to apply a programming pulse, at an elevated voltage, to the first word line and second word line to concurrently program the first and second storage cells.

公开(公告)号：US10984874B1

公开(公告)日：2021-04-20

申请号：US16681968

申请日：2019-11-13

Applicant: SanDisk Technologies LLC

Inventor： Hiroki Yabe ,  Koichiro Hayashi ,  Takuya Ariki ,  Naoki Ookuma ,  Toru Miwa

IPC: G11C16/28 ,  H01L27/11556 ,  G11C16/04 ,  G11C16/24 ,  H01L27/11582

Abstract: A random access memory is provided including a plane structure comprising a plurality of sense amplifiers, each including a local data latch, a pair of local busses connected to each of the data latches, a differential data bus, and a pair of redrivers connected between the pair of local busses and the differential data bus.