公开(公告)号：US20130214434A1

公开(公告)日：2013-08-22

申请号：US13857195

申请日：2013-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

IPC: H01L23/29

CPC classification number: H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

公开(公告)号：US20200150471A1

公开(公告)日：2020-05-14

申请号：US16667948

申请日：2019-10-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Satoshi MURAKAMI ,  Hajime KIMURA

IPC: G02F1/1368 ,  G02F1/1362 ,  G02F1/1333 ,  H05B33/04 ,  H01L51/52 ,  H01L27/32

Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

公开(公告)号：US20190312232A1

公开(公告)日：2019-10-10

申请号：US16442859

申请日：2019-06-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA

IPC: H01L51/52

Abstract: A light emitting element having an organic compound, which can be extended its longevity is provided. According to the present invention, there is provided a constitution in which, in order to protect a light emitting element from moisture, an inorganic insulating film 312a, a stress relaxation layer 312b having transparency and a hygroscopic property, and an inorganic insulating film 312c are repeatedly laminated over a cathode. The stress relaxation layer 312b having transparency and the hygroscopic property uses at least one film selected from the group consisting of a film comprising a same material as that of a layer 310, containing an organic compound, sandwiched between a cathode and an anode, a layer capable of being formed by vapor deposition, and a layer capable of being formed by coating.

公开(公告)号：US20180308867A1

公开(公告)日：2018-10-25

申请号：US16017258

申请日：2018-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya MARUYAMA ,  Toru TAKAYAMA ,  Yumiko OHNO ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L33/24 ,  H01L33/62 ,  H01L33/56 ,  H01L33/44 ,  H01L21/762 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1266 ,  H01L29/78603 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68368

Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

公开(公告)号：US20170243895A1

公开(公告)日：2017-08-24

申请号：US15397045

申请日：2017-01-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya MARUYAMA ,  Toru TAKAYAMA ,  Yumiko OHNO ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L33/56 ,  H01L33/62 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L27/1218 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1266 ,  H01L29/78603 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68368

Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

公开(公告)号：US20150160490A1

公开(公告)日：2015-06-11

申请号：US14511197

申请日：2014-10-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Satoshi MURAKAMI ,  Hajime KIMURA

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/133305 ,  G02F1/136277 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3265 ,  H01L51/5237 ,  H01L2251/5315 ,  H05B33/04

Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

Abstract translation: 提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。 依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。 设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。 提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。

公开(公告)号：US20130280841A1

公开(公告)日：2013-10-24

申请号：US13922795

申请日：2013-06-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hirokazu YAMAGATA ,  Shunpei YAMAZAKI ,  Toru TAKAYAMA

IPC: H01L51/56

CPC classification number: H01L51/524 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/0003 ,  H01L51/5056 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5253 ,  H01L51/56 ,  Y10S438/976

Abstract: A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.