Electronic device and method for reading data of memory cell

    公开(公告)号:US10283197B1

    公开(公告)日:2019-05-07

    申请号:US15669758

    申请日:2017-08-04

    Applicant: SK hynix Inc.

    Abstract: A method for reading a data of a memory cell comprising a selection device and a resistive memory device which has a high resistance state or a low resistance state according to a data stored therein includes: applying a first read voltage to the memory cell; applying a second read voltage to the memory cell, the second read voltage having a level lower than a level of the first read voltage; and sensing the data of the memory cell while the second read voltage is applied to the memory cell.

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