公开(公告)号：US20210028348A1

公开(公告)日：2021-01-28

申请号：US17043456

申请日：2019-03-22

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Guillaume Besnard ,  Yann Sinquin

IPC: H01L41/335 ,  H01L41/27 ,  H01L41/312 ,  H01L45/00

Abstract: A method for separating a removable composite structure using a light flux includes supplying the removable composite structure, which successively comprises: a substrate that is transparent to the light flux; an optically absorbent layer for at least partially absorbing a light flux; a sacrificial layer adapted to dissociate subject to the application of a temperature higher than a dissociation temperature and made of a material different from that of the optically absorbent layer; and at least one layer to be separated. The method further includes applying a light flux through the substrate, the light flux being at least partly absorbed by the optically absorbent layer, so as to heat the optically absorbent layer; heating the sacrificial layer by thermal conduction from the optically absorbent layer, up to a temperature that is greater than or equal to the dissociation temperature; and dissociating the sacrificial layer under the effect of the heating.

公开(公告)号：US20200343441A1

公开(公告)日：2020-10-29

申请号：US16759992

申请日：2018-10-31

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L41/313 ,  H01L21/265 ,  H01L41/187

Abstract: A method for manufacturing film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.

公开(公告)号：US20200303242A1

公开(公告)日：2020-09-24

申请号：US16759990

申请日：2018-10-31

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L21/762 ,  H01L41/313

Abstract: A method for manufacturing a film on a support having a non-flat surface comprises: providing a donor substrate having a non-flat surface, forming an embrittlement zone in the donor substrate so as to delimit the film to be transferred, forming the support by deposition on the non-flat surface of the film to be transferred, and detaching the donor substrate along the embrittlement zone, so as to transfer the film onto the support.

公开(公告)号：US20190288030A1

公开(公告)日：2019-09-19

申请号：US16352085

申请日：2019-03-13

Applicant: Soitec

Inventor： Jean-Marc Bethoux

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: A method for manufacturing a plurality of crystalline semiconductor islands having different lattice parameters includes providing a relaxation substrate comprising a support and a flow layer on the support that includes first and second groups of blocks having different viscosities at a relaxation temperature. The relaxation substrate also comprises a plurality of strained crystalline semiconductor islands on the flow layer, the islands of a first group being located on the first group of blocks and islands of a second group being located on the second group of blocks. The relaxation substrate is then heat treated at a relaxation temperature higher than or equal to the glass transition temperature of at least one block of the flow layer to cause differentiated lateral expansion of the first and second groups of islands such that the first and second groups of relaxed islands then have different lattice parameters.