Display device and method of manufacturing the same

    公开(公告)号:US10673008B2

    公开(公告)日:2020-06-02

    申请号:US16459060

    申请日:2019-07-01

    Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

    Gate driving circuit having high reliability and display device including the same

    公开(公告)号:US10360865B2

    公开(公告)日:2019-07-23

    申请号:US15463012

    申请日:2017-03-20

    Abstract: A gate driving circuit includes a plurality of stages to provide gate signals to gate lines of a display panel. At least one of the stages includes an input circuit receiving a carry signal from a previous stage. A first output circuit outputs a first clock signal as a gate signal. The second output circuit outputs the clock signal as a carry signal. The discharge hold circuit delivers the clock signal to a node based on the clock signal and discharges the node as a second voltage based on the carry signal. The pull down circuit discharges the gate signal as a first voltage based on a signal of the node and a succeeding carry signal from a succeeding stage and discharges another node and the carry signal as the second voltage. The switching circuit delivers the carry signal from the previous stage based on a second clock signal.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20180366586A1

    公开(公告)日:2018-12-20

    申请号:US15871468

    申请日:2018-01-15

    Abstract: A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.

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