公开(公告)号：US20220149132A1

公开(公告)日：2022-05-12

申请号：US17246989

申请日：2021-05-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeonkeon Moon ,  Taesang Kim ,  Joonseok Park ,  Sangwoo Sohn ,  Soyoung Koo

IPC: H01L27/32 ,  H01L51/56

Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.

公开(公告)号：US20210280667A1

公开(公告)日：2021-09-09

申请号：US17328026

申请日：2021-05-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyungjin Jeon ,  Joonseok Park ,  Soyoung Koo ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Hyungjun Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

公开(公告)号：US10892308B2

公开(公告)日：2021-01-12

申请号：US16789107

申请日：2020-02-12

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok Son ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Masataka Kano

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H01L51/00 ,  H01L27/12 ,  H01L51/50

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US11968876B2

公开(公告)日：2024-04-23

申请号：US17283714

申请日：2019-02-01

Applicant: Samsung Display Co., Ltd.

Inventor： Kyungjin Jeon ,  Joon-seok Park ,  Kwang-suk Kim ,  Taesang Kim ,  Yeon-keon Moon ,  Geunchul Park ,  Jun-hyung Lim

IPC: H10K59/38 ,  H10K50/844 ,  H10K50/86 ,  H10K59/121 ,  H10K59/126 ,  H01L27/12 ,  H01L29/786

CPC classification number: H10K59/38 ,  H10K50/844 ,  H10K50/865 ,  H10K59/1213 ,  H10K59/126 ,  H01L27/1225 ,  H01L29/78633 ,  H01L29/7869

Abstract: A display device includes a base substrate including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area, first to third thin film transistors on the base substrate and including first to third active patterns, respectively, first to third pixel electrodes electrically connected to the first to third thin film transistors, respectively and in the first to third sub-pixel areas, respectively, a blue light emitting layer on the first to third pixel electrodes and configured to emit a blue light, a first color conversion pattern in the first sub-pixel area on the blue light emitting layer, a second color conversion pattern in the second sub-pixel area on the blue light emitting layer, and a red color filter layer between the blue light emitting layer and the first to third active patterns.

公开(公告)号：US11289588B2

公开(公告)日：2022-03-29

申请号：US16824339

申请日：2020-03-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/146 ,  H01L29/04 ,  H01L27/12

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern includes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

公开(公告)号：US20180233575A1

公开(公告)日：2018-08-16

申请号：US15730475

申请日：2017-10-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC: H01L29/66 ,  H01L27/32 ,  H01L27/146 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L29/6675 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/14692 ,  H01L27/3225 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

公开(公告)号：US11721768B2

公开(公告)日：2023-08-08

申请号：US17349214

申请日：2021-06-16

Applicant: Samsung Display Co., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Taesang Kim ,  Min Seong Kim ,  Hyun Jae Kim ,  Jun Hyung Lim

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1251 ,  H01L29/105 ,  H01L29/24

Abstract: A transistor includes a gate electrode, an active layer facing the gate electrode, and a source electrode and a drain electrode connected to the active layer. The active layer includes a lower active layer including an oxide-based semiconductor material, and an upper active layer including the oxide-based semiconductor material and an oxygen-gettering material.

公开(公告)号：US11677030B2

公开(公告)日：2023-06-13

申请号：US17158824

申请日：2021-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo Sohn ,  Yeonkeon Moon ,  Myounghwa Kim ,  Taesang Kim ,  Geunchul Park ,  Joonseok Park ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/24 ,  H01L27/12 ,  H01L21/8234

CPC classification number: H01L29/7869 ,  H01L21/823412 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3244 ,  H01L29/24 ,  H01L29/78696 ,  H01L27/3262

Abstract: A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.

公开(公告)号：US11309429B2

公开(公告)日：2022-04-19

申请号：US16819496

申请日：2020-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok Park ,  Jihun Lim ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US10593739B2

公开(公告)日：2020-03-17

申请号：US16133404

申请日：2018-09-17

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok Son ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Masataka Kano

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H01L27/12 ,  H01L51/50

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.