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1.发明授权公开(公告)号：US11532687B2
公开(公告)日：2022-12-20
申请号：US16880792
申请日：2020-05-21
Applicant: Samsung Display Co., Ltd.
Inventor： Sangwoo Sohn , Myounghwa Kim , TaeSang Kim , Hyungjun Kim , Yeon Keon Moon , Joon Seok Park , Sangwon Shin , Jun Hyung Lim , Hyelim Choi
IPC: H01L27/32 , H01L51/56 , H01L51/52 , H01L29/786
Abstract: A display panel includes a base layer, a first thin film transistor on the base layer, a second thin film transistor electrically coupled to the first thin film transistor, and a light emitting element electrically coupled to the second thin film transistor. The first thin film transistor includes a first semiconductor pattern on the base layer, a first barrier pattern on the first semiconductor pattern and including a gallium (Ga) oxide and a zinc (Zn) oxide, and a first control electrode on the first barrier pattern and overlapping the first semiconductor pattern. Accordingly, a signal transmission speed of the display panel may be improved, and electrical characteristics and reliability of the thin film transistor included in the display panel may be improved.
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2.发明授权公开(公告)号：US09837316B2
公开(公告)日：2017-12-05
申请号：US15367568
申请日：2016-12-02
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jongchan Lee , Yoonho Khang , Myounghwa Kim , Joonhwa Bae , Myounggeun Cha
IPC: H01L21/77 , H01L21/8234 , H01L21/285 , H01L29/786 , H01L29/45 , H01L29/417 , H01L29/66 , H01L21/02 , H01L27/12 , H01L21/3205 , H01L27/32
CPC classification number: H01L21/823418 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02592 , H01L21/02667 , H01L21/02672 , H01L21/28518 , H01L21/32053 , H01L27/1222 , H01L27/1274 , H01L27/1277 , H01L27/3262 , H01L29/41733 , H01L29/458 , H01L29/66765 , H01L29/78618 , H01L29/78678
Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.
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3.发明申请公开(公告)号：US20160013257A1
公开(公告)日：2016-01-14
申请号：US14793966
申请日：2015-07-08
Applicant: Samsung Display Co., Ltd
Inventor： SOYOUNG KOO , Myounghwa Kim , Sangho Park , Jun Hyung Lim , Masataka Kano
CPC classification number: H01L27/1262 , H01L21/02554 , H01L21/02565 , H01L21/02664 , H01L21/477 , H01L29/24 , H01L29/66969 , H01L29/78693 , H01L2227/323
Abstract: A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.
Abstract translation: 公开了一种薄膜晶体管的制造方法及其制造方法。 一方面，制造薄膜晶体管的方法包括在衬底上形成氧化物半导体层，用由氮气或一氧化氮气体产生的等离子体等离子体处理氧化物半导体层，以减少氧化物中的缺陷 并且等离子体处理的氧化物半导体层退火以形成沟道层。
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公开(公告)号：US11335707B2
公开(公告)日：2022-05-17
申请号：US16371433
申请日：2019-04-01
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyoung Seok Son , Myounghwa Kim , Jaybum Kim , Yeon Keon Moon , Masataka Kano
Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.
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公开(公告)号：US20210280667A1
公开(公告)日：2021-09-09
申请号：US17328026
申请日：2021-05-24
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyungjin Jeon , Joonseok Park , Soyoung Koo , Myounghwa Kim , Eoksu Kim , Taesang Kim , Hyungjun Kim , Yeonkeon Moon , Geunchul Park , Sangwoo Sohn , Junhyung Lim , Hyelim Choi
Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.
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Patent Agency Ranking
公开(公告)号：US10892308B2
公开(公告)日：2021-01-12
申请号：US16789107
申请日：2020-02-12
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoungseok Son , Myounghwa Kim , Eoksu Kim , Taesang Kim , Masataka Kano
Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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7.发明授权公开(公告)号：US09748282B2
公开(公告)日：2017-08-29
申请号：US14721505
申请日：2015-05-26
Applicant: Samsung Display Co., Ltd.
Inventor： Myounghwa Kim , Jaewook Kang , Joohee Jeon , Jongchan Lee , Yoonho Khang
IPC: H01L27/12 , H01L29/786 , H01L29/423 , H01L29/49 , H01L29/45 , G02F1/1368 , H01L27/32 , G02F1/1362
CPC classification number: H01L27/1255 , G02F1/136213 , G02F1/1368 , H01L27/1222 , H01L27/1288 , H01L27/3258 , H01L27/3262 , H01L27/3265 , H01L29/42372 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/4966 , H01L29/78666 , H01L29/78675 , H01L2227/323
Abstract: Provided is a thin film transistor array substrate having at least one thin film transistor. The thin film transistor includes a semiconductor layer having a channel area with a first doping concentration on a substrate, a source-drain area disposed at opposite sides of the channel area and with a second doping concentration greater than the first doping concentration, and a substantially undoped area extending from the source-drain area. The substrate has a gate insulating layer on the semiconductor layer and a gate electrode disposed on the gate insulating layer and overlapping the channel area in at least some portions. The substrate has a source electrode and a drain electrode, each insulated from the gate electrode and electrically connected to the source-drain area. The gate electrode includes a first gate electrode layer and a second gate electrode layer, wherein the second gate electrode layer is thicker than the first gate electrode layer.
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8.发明授权公开(公告)号：US09412771B2
公开(公告)日：2016-08-09
申请号：US14793966
申请日：2015-07-08
Applicant: Samsung Display Co., Ltd
Inventor： Soyoung Koo , Myounghwa Kim , Sangho Park , Jun Hyung Lim , Masataka Kano
CPC classification number: H01L27/1262 , H01L21/02554 , H01L21/02565 , H01L21/02664 , H01L21/477 , H01L29/24 , H01L29/66969 , H01L29/78693 , H01L2227/323
Abstract: A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.
Abstract translation: 公开了一种薄膜晶体管的制造方法及其制造方法。 一方面，制造薄膜晶体管的方法包括在衬底上形成氧化物半导体层，用由氮气或一氧化氮气体产生的等离子体等离子体处理氧化物半导体层，以减少氧化物中的缺陷 并且等离子体处理的氧化物半导体层退火以形成沟道层。
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公开(公告)号：US12262593B2
公开(公告)日：2025-03-25
申请号：US18412760
申请日：2024-01-15
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoungseok Son , Myounghwa Kim , Eoksu Kim , Taesang Kim , Masataka Kano
IPC: H01L21/78 , H01L27/12 , H10K50/11 , H10K50/844 , H10K59/121 , H10K59/122 , H10K59/123 , H10K59/124 , H10K59/131 , H10K71/00 , H10K77/10 , H10K59/12 , H10K102/00
Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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公开(公告)号：US11887991B2
公开(公告)日：2024-01-30
申请号：US17745427
申请日：2022-05-16
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoung Seok Son , Myounghwa Kim , Jaybum Kim , Yeon Keon Moon , Masataka Kano
IPC: H01L27/12 , H10K59/122 , H10K59/123
CPC classification number: H01L27/1218 , H01L27/127 , H01L27/1225 , H10K59/122 , H10K59/123
Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.
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