METHOD AND APPARATUS FOR PROVIDING PROFILE
    31.
    发明申请

    公开(公告)号:US20200287907A1

    公开(公告)日:2020-09-10

    申请号:US16881673

    申请日:2020-05-22

    Abstract: Provided are a communication method and system that integrate 5G communication systems with IoT technologies to support higher data rates after 4G systems. The present disclosure is based on 5G communication technologies and IoT related technologies, and may be applied to intelligent services (e.g. smart homes, smart buildings, smart cities, smart or connected cars, health care, digital education, retail, and security and safety).There is provided a method of profile downloading for a terminal. The method may include: transmitting a first profile download request to a profile providing server; receiving unencrypted first profile information from the profile providing server; checking whether there is an input for consenting to profile downloading after receiving unencrypted profile information; and determining whether to download an encrypted profile on the basis of the check result. There is also provided a terminal capable of performing the above method. In addition, there are provided a profile providing server and an operation method therefor for delivering a profile to the above terminal.

    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

    公开(公告)号:US20190181226A1

    公开(公告)日:2019-06-13

    申请号:US16186915

    申请日:2018-11-12

    Abstract: A three-dimensional semiconductor memory device includes an electrode structure including electrodes vertically stacked on a semiconductor layer, a vertical semiconductor pattern penetrating the electrode structure and connected to the semiconductor layer, and a vertical insulating pattern between the electrode structure and the vertical semiconductor pattern. The vertical insulating pattern includes a sidewall portion on a sidewall of the electrode structure, and a protrusion extending from the sidewall portion along a portion of a top surface of the semiconductor layer. The vertical semiconductor pattern includes a vertical channel portion having a first thickness and extending along the sidewall portion of the vertical insulating pattern, and a contact portion extending from the vertical channel portion and conformally along the protrusion of the vertical insulating pattern and the top surface of the semiconductor layer. The contact portion has a second thickness greater than the first thickness.

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