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    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    32.
    发明申请
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 有权

    公开(公告)号：US20210288114A1

    公开(公告)日：2021-09-16

    申请号：US17333749

    申请日：2021-05-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Sung Young YUN ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44

    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

    ORGANIC IMAGE SENSORS WITHOUT COLOR FILTERS
    36.
    发明申请
    ORGANIC IMAGE SENSORS WITHOUT COLOR FILTERS 审中-公开

    公开(公告)号：US20190245009A1

    公开(公告)日：2019-08-08

    申请号：US16265264

    申请日：2019-02-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L27/28

    CPC classification number: H01L27/307 ,  H01L27/281 ,  H01L27/286

    Abstract: An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.

    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    37.
    发明申请
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 审中-公开

    公开(公告)号：US20180269258A1

    公开(公告)日：2018-09-20

    申请号：US15986956

    申请日：2018-05-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Sung Young YUN ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L51/42

    CPC classification number: H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/4253 ,  H01L51/441 ,  Y02E10/549

    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    38.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20170287971A1

    公开(公告)日：2017-10-05

    申请号：US15283698

    申请日：2016-10-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Kyu Sik Kim ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14636

    Abstract: An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor.

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