摘要:
A charged particle beam writing method includes inputting design pattern data, virtually dividing a writing area to be written with the design pattern data into a plurality of small areas in a mesh-like manner, calculating a pattern density in each of the plurality of small areas based on the design pattern data, calculating a resizing amount for each pattern density in a case of irradiating a charged particle beam at an isofocal dose, resizing a dimension of the design pattern data in each of the plurality of small areas, based on the resizing amount in each of the plurality of small areas, and writing a resized design pattern on a target workpiece with the isofocal dose corresponding to the pattern density which was calculated before the resizing in each of the plurality of small areas.
摘要:
A pigment dispersing agent of the formula (1) capable of providing a printing ink or a coating composition excellent in fluidity and dispersion stability and a dry coating excellent in gloss, a pigment composition containing the same and a pigment dispersion containing the same, wherein X1 is —NH—, —O—, —CONH—, —SO2NH—, —CH2NH—, —CH2NHCOCH2NH— or —X3—Y—X4—, X2 and X4 are —NH— or —O—, X3 is —CONH—, —SO2NH—, —CH2NH—, —NHCO— or —NHSO2—, Y is an alkylene group, an alkenylene group or an arylene group, Z is —SO3M or —COOM, R1 is a heterocyclic ring residue or an aromatic ring residue, Q is —O—R2, —NH—R2, a halogen group, —X1—R1 or —X2—Y-Z, R2 is a hydrogen atom, an alkyl group or an alkenyl group, and M is one equivalent of a monovalent to trivalent cation.
摘要:
A pattern writing method acquires the area of a pattern segment located in each of a plurality of small regions obtained by dividing a region on which a pattern is to be written, small region by small region, and writes a pattern based on an optimum dose calculated based on this area. This method employs a scheme of shifting pattern segments and averaging the accumulated area, so that even when the pitch of repetitive patterns slightly differs from the side length of each small region in the pitch direction, a peculiar error does not occur, thereby ensuring highly-precise proximity effect correction and contributing to improving the precision of writing an LSI pattern.