公开(公告)号：US20170179294A1

公开(公告)日：2017-06-22

申请号：US15380502

申请日：2016-12-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kiyoshi KATO ,  Tomoaki ATSUMI ,  Shunpei YAMAZAKI ,  Haruyuki BABA ,  Shinpei MATSUDA

IPC: H01L29/786 ,  H01L27/108 ,  H01L27/088

Abstract: A semiconductor device capable of holding data for a long time is provided. The semiconductor device includes a first transistor, a second transistor, and a circuit. The first transistor includes a first gate and a second gate. The first transistor includes a first semiconductor in a channel formation region. The first gate and the second gate overlap with each other in a region with the first semiconductor provided therebetween. The second transistor includes a second semiconductor in a channel formation region. A first terminal of the second transistor is electrically connected to a gate of the second transistor and the second gate. A second terminal of the second transistor is electrically connected to the circuit. The circuit has a function of generating a negative potential. The second semiconductor has a wider bandgap than the first semiconductor.

公开(公告)号：US20160155852A1

公开(公告)日：2016-06-02

申请号：US14953632

申请日：2015-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Haruyuki BABA ,  Akio SUZUKI ,  Hiromi SAWAI ,  Masahiko HAYAKAWA ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/203 ,  H01L27/1255 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.

Abstract translation: 在溅射气体被供应到沉积室之后，在靶附近产生包括溅射气体的离子的等离子体。 溅射气体的离子被加速并与靶碰撞，使得靶板的平板粒子和原子与靶分离。 平板颗粒之间具有间隙而沉积，使得平面面向基板。 从目标分离的原子和原子团聚体进入沉积的平板颗粒之间的间隙，并在基板的平面方向上生长以填充间隙。 在衬底上形成膜。 在沉积之后，在氧气氛中在高温下进行热处理，其形成具有少量氧空位和高结晶度的氧化物。